component
UF630G-TN3-R
Public Made by Adomby adom
UTC(Unisonic Tech) MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
main
UF630G-TN3-R
UTC(Unisonic Tech) · MOSFETs · TO-252
UF630G-TN3-R from UTC(Unisonic Tech), in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; controls the channel with VGS rated ±20 V max and RDS(ON) < 0.4Ω at VGS = 10V, ID = 5A. |
| 2 | D | passive | Drain; connects to the load with VDSS rated 200 V and continuous drain current of 9 A. |
| 3 | S | passive | Source; current return terminal of the N-channel MOSFET, with continuous diode forward current of 9 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | UTC(Unisonic Tech) |
| Package | TO-252 |
| Category | Transistors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | 200 | V | VGS = 0V, ID = 250μA | 4 | ||
| On-State Drain Current | ID(ON) | 9 | A | VDS > ID(ON) x RDS(ON)MAX, VGS = 10V | 4 | ||
| Drain-Source Leakage Current | IDSS | 10 | μA | VDS = Rated BVDSS, VGS = 0V | 4 | ||
| Gate-Source Leakage Current Forward | IGSS | 100 | nA | VGS = 20V, VDS = 0V | 4 | ||
| Gate-Source Leakage Current Reverse | IGSS | -100 | nA | VGS = -20V, VDS = 0V | 4 | ||
| Gate Threshold Voltage | VGS(TH) | 2 | 4 | V | VGS = VDS, ID = 250μA | 4 | |
| Static Drain-Source On-State Resistance | RDS(ON) | 0.25 | 0.4 | Ω | VGS = 10V, ID = 5A | 4 | |
| Total Gate Charge | QG | 19 | 30 | nC | VGS = 10V, ID = 9A, VDS = 0.8 x Rated BVDSS, IG(REF) = 1.5mA | 4 | |
| Drain-Source Diode Forward Voltage | VSD | 2 | V | VGS =0V, IS = 9.0A | 4 | ||
| Maximum Continuous Drain-Source Diode Forward Current | IS | 9 | A | 4 | |||
| Maximum Pulsed Drain-Source Diode Forward Current | ISM | 36 | A | 4 | |||
| Drain-Source Voltage | VDSS | 200 | V | TC = 25°C | 3 | ||
| Drain-Gate Voltage | VDGR | 200 | V | RGS = 20kΩ, TJ =25°C ~125°C | 3 | ||
| Gate-Source Voltage | VGSS | -20 | 20 | V | TC = 25°C | 3 | |
| Continuous Drain Current | ID | 9 | A | TC = 25°C | 3 | ||
| Pulsed Drain Current | IDM | 36 | A | Note 2 | 3 | ||
| Single Pulse Avalanche Energy | EAS | 150 | mJ | L = 4mH, IAS = 8.3A, VDD = 20V, RG = 25 Ω, Starting TJ = 25°C | 3 | ||
| Power Dissipation (TO-251/TO-252) | PD | 46 | W | TC = 25°C | 3 | ||
| Junction Temperature | TJ | 150 | °C | 3 | |||
| Storage Temperature | TSTG | -55 | 150 | °C | 3 | ||
| Junction to Ambient Thermal Resistance (TO-251/TO-252) | θJA | 100.3 | °C/W | 3 | |||
| Junction to Case Thermal Resistance (TO-251/TO-252) | θJC | 2.7 | °C/W | 3 | |||
| Input Capacitance | CISS | 600 | pF | VDS = 25V, VGS = 0V, f = 1.0MHz | 4 | ||
| Output Capacitance | COSS | 250 | pF | VDS = 25V, VGS = 0V, f = 1.0MHz | 4 | ||
| Reverse Transfer Capacitance | CRSS | 80 | pF | VDS = 25V, VGS = 0V, f = 1.0MHz | 4 | ||
| Turn-On Delay Time | tD(ON) | 30 | ns | VDD = 90V, ID≈9A, RGS = 9.1Ω, VGS = 10V, RL = 9.6Ω | 4 | ||
| Turn-On Rise Time | tR | 50 | ns | VDD = 90V, ID≈9A, RGS = 9.1Ω, VGS = 10V, RL = 9.6Ω | 4 | ||
| Turn-Off Delay Time | tD(OFF) | 50 | ns | VDD = 90V, ID≈9A, RGS = 9.1Ω, VGS = 10V, RL = 9.6Ω | 4 | ||
| Turn-Off Fall Time | tF | 40 | ns | VDD = 90V, ID≈9A, RGS = 9.1Ω, VGS = 10V, RL = 9.6Ω | 4 | ||
| Gate-Source Charge | QGS | 10 | nC | VGS = 10V, ID = 9A, VDS = 0.8 x Rated BVDSS, IG(REF) = 1.5mA | 4 | ||
| Gate-Drain Charge | QGD | 9 | nC | VGS = 10V, ID = 9A, VDS = 0.8 x Rated BVDSS, IG(REF) = 1.5mA | 4 | ||
| Reverse Recovery Time | trr | 450 | ns | IS = 9.0A, dIS/dt = 100A/μs | 4 | ||
| Reverse Recovery Charge | QRR | 3 | μC | IS = 9.0A, dIS/dt = 100A/μs | 4 |
CAD (KiCad official)
- Symbol:
UF630G-TN3-R - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
uf630g-tn3-r-etched.step/uf630g-tn3-r-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);uf630g-tn3-r.step/uf630g-tn3-r.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: UTC(Unisonic Tech) datasheet (8 pp, sha256
dbcdfdb55d19c861, retrieved 2026-10-22, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# UF630G-TN3-R
**UTC(Unisonic Tech)** · MOSFETs · TO-252
UF630G-TN3-R from UTC(Unisonic Tech), in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; controls the channel with VGS rated ±20 V max and RDS(ON) < 0.4Ω at VGS = 10V, ID = 5A. |
| 2 | D | passive | Drain; connects to the load with VDSS rated 200 V and continuous drain current of 9 A. |
| 3 | S | passive | Source; current return terminal of the N-channel MOSFET, with continuous diode forward current of 9 A. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | UTC(Unisonic Tech) |
| Package | TO-252 |
| Category | Transistors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | 200 | | | V | VGS = 0V, ID = 250μA | 4 |
| On-State Drain Current | ID(ON) | 9 | | | A | VDS > ID(ON) x RDS(ON)MAX, VGS = 10V | 4 |
| Drain-Source Leakage Current | IDSS | | | 10 | μA | VDS = Rated BVDSS, VGS = 0V | 4 |
| Gate-Source Leakage Current Forward | IGSS | | | 100 | nA | VGS = 20V, VDS = 0V | 4 |
| Gate-Source Leakage Current Reverse | IGSS | -100 | | | nA | VGS = -20V, VDS = 0V | 4 |
| Gate Threshold Voltage | VGS(TH) | 2 | | 4 | V | VGS = VDS, ID = 250μA | 4 |
| Static Drain-Source On-State Resistance | RDS(ON) | | 0.25 | 0.4 | Ω | VGS = 10V, ID = 5A | 4 |
| Total Gate Charge | QG | | 19 | 30 | nC | VGS = 10V, ID = 9A, VDS = 0.8 x Rated BVDSS, IG(REF) = 1.5mA | 4 |
| Drain-Source Diode Forward Voltage | VSD | | | 2 | V | VGS =0V, IS = 9.0A | 4 |
| Maximum Continuous Drain-Source Diode Forward Current | IS | | | 9 | A | | 4 |
| Maximum Pulsed Drain-Source Diode Forward Current | ISM | | | 36 | A | | 4 |
| Drain-Source Voltage | VDSS | | | 200 | V | TC = 25°C | 3 |
| Drain-Gate Voltage | VDGR | | | 200 | V | RGS = 20kΩ, TJ =25°C ~125°C | 3 |
| Gate-Source Voltage | VGSS | -20 | | 20 | V | TC = 25°C | 3 |
| Continuous Drain Current | ID | | | 9 | A | TC = 25°C | 3 |
| Pulsed Drain Current | IDM | | | 36 | A | Note 2 | 3 |
| Single Pulse Avalanche Energy | EAS | | | 150 | mJ | L = 4mH, IAS = 8.3A, VDD = 20V, RG = 25 Ω, Starting TJ = 25°C | 3 |
| Power Dissipation (TO-251/TO-252) | PD | | | 46 | W | TC = 25°C | 3 |
| Junction Temperature | TJ | | | 150 | °C | | 3 |
| Storage Temperature | TSTG | -55 | | 150 | °C | | 3 |
| Junction to Ambient Thermal Resistance (TO-251/TO-252) | θJA | | | 100.3 | °C/W | | 3 |
| Junction to Case Thermal Resistance (TO-251/TO-252) | θJC | | | 2.7 | °C/W | | 3 |
| Input Capacitance | CISS | | 600 | | pF | VDS = 25V, VGS = 0V, f = 1.0MHz | 4 |
| Output Capacitance | COSS | | 250 | | pF | VDS = 25V, VGS = 0V, f = 1.0MHz | 4 |
| Reverse Transfer Capacitance | CRSS | | 80 | | pF | VDS = 25V, VGS = 0V, f = 1.0MHz | 4 |
| Turn-On Delay Time | tD(ON) | | 30 | | ns | VDD = 90V, ID≈9A, RGS = 9.1Ω, VGS = 10V, RL = 9.6Ω | 4 |
| Turn-On Rise Time | tR | | 50 | | ns | VDD = 90V, ID≈9A, RGS = 9.1Ω, VGS = 10V, RL = 9.6Ω | 4 |
| Turn-Off Delay Time | tD(OFF) | | 50 | | ns | VDD = 90V, ID≈9A, RGS = 9.1Ω, VGS = 10V, RL = 9.6Ω | 4 |
| Turn-Off Fall Time | tF | | 40 | | ns | VDD = 90V, ID≈9A, RGS = 9.1Ω, VGS = 10V, RL = 9.6Ω | 4 |
| Gate-Source Charge | QGS | | 10 | | nC | VGS = 10V, ID = 9A, VDS = 0.8 x Rated BVDSS, IG(REF) = 1.5mA | 4 |
| Gate-Drain Charge | QGD | | 9 | | nC | VGS = 10V, ID = 9A, VDS = 0.8 x Rated BVDSS, IG(REF) = 1.5mA | 4 |
| Reverse Recovery Time | trr | | 450 | | ns | IS = 9.0A, dIS/dt = 100A/μs | 4 |
| Reverse Recovery Charge | QRR | | 3 | | μC | IS = 9.0A, dIS/dt = 100A/μs | 4 |
## CAD (KiCad official)
- Symbol: `UF630G-TN3-R`
- Footprint: `Package_TO_SOT_SMD:TO-252-2`
- 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files: `uf630g-tn3-r-etched.step` / `uf630g-tn3-r-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `uf630g-tn3-r.step` / `uf630g-tn3-r.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [UTC(Unisonic Tech) datasheet](docs/uf630g-tn3-r-datasheet.pdf) (8 pp, sha256 `dbcdfdb55d19c861`, retrieved 2026-10-22, tier: manufacturer)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/uf630g-tn3-r-datasheet.pdf)