# UF07P15G-AE3-R

**UTC Unisonic Tech** · MOSFETs · SOT-23

UF07P15G-AE3-R from UTC Unisonic Tech, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source terminal of the -150V, -0.7A P-channel power MOSFET (Pin Assignment: S = Source), with no pin-specific electrical limits stated in the datasheet. |
| 2 | G | input | Gate terminal of the P-channel power MOSFET (Pin Assignment: G = Gate), which the datasheet specifies only by function, with the gate-source limit of ±20 V given in the absolute maximum ratings. |
| 3 | D | passive | Drain terminal of the P-channel power MOSFET (Pin Assignment: D = Drain), rated at -150 V drain-source voltage (VDSS) in the absolute maximum ratings. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | UTC Unisonic Tech |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDSS | -150 |  |  | V |  | 2 |
| Gate-Source Voltage | VGSS | -20 |  | 20 | V |  | 2 |
| Continuous Drain Current | ID | -0.7 |  |  | A |  | 2 |
| Pulsed Drain Current | IDM | -2.8 |  |  | A | Note 2: repetitive rating, pulse width limited by maximum junction temperature | 2 |
| Avalanche Current | IAR |  |  | 1.8 | A | Note 2: repetitive rating, pulse width limited by maximum junction temperature | 2 |
| Avalanche Energy Single Pulsed | EAS |  |  | 16 | mJ | Note 3: L=10mH, IAS=1.8A, VDD=50V, RG=25Ω, Starting TJ=25°C | 2 |
| Power Dissipation | PD |  |  | 0.6 | W | TC = 25°C (table condition) | 2 |
| Junction Temperature | TJ |  |  | 150 | °C |  | 2 |
| Storage Temperature | TSTG | -55 |  | 150 | °C |  | 2 |
| Junction to Ambient thermal resistance | θJA |  |  | 325 | °C/W |  | 2 |
| Junction to Case thermal resistance | θJC |  |  | 208 | °C/W |  | 2 |
| Drain-Source Breakdown Voltage | BVDSS | -150 |  |  | V | VGS=0 V, ID=-250µA | 2 |
| Drain-Source Leakage Current | IDSS |  |  | -1 | µA | VDS=-150V, VGS=0V | 2 |
| Gate-Source Leakage Current | IGSS | -100 |  | 100 | nA | VDS=0V, VGS=±20V | 2 |
| Gate Threshold Voltage | VGS(TH) | -2 |  | -4 | V | VDS=VGS, ID=-250µA | 2 |
| Static Drain-Source On-Resistance | RDS(ON) |  |  | 3.1 | Ω | VGS=-10V, ID=-0.5A | 2 |
| Maximum Body-Diode Continuous Current | IS | -0.7 |  |  | A |  | 2 |
| Maximum Pulsed Drain-Source Diode Forward Current | ISM | -2.8 |  |  | A |  | 2 |
| Diode Forward Voltage | VSD |  |  | -2 | V | IS=-0.7A, VGS=0V | 2 |

## CAD (KiCad official)

- Symbol: `UF07P15G-AE3-R`
- Footprint: `Package_TO_SOT_SMD:SOT-23`
- 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files: `uf07p15g-ae3-r-etched.step` / `uf07p15g-ae3-r-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `uf07p15g-ae3-r.step` / `uf07p15g-ae3-r.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [UTC Unisonic Tech datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588911528778584064) (5 pp, sha256 `5ada671489496dea`, retrieved 2026-10-10, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/uf07p15g-ae3-r-datasheet.pdf)