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UF07P15G-AE3-R

UTC Unisonic Tech · MOSFETs · SOT-23

UF07P15G-AE3-R from UTC Unisonic Tech, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S passive Source terminal of the -150V, -0.7A P-channel power MOSFET (Pin Assignment: S = Source), with no pin-specific electrical limits stated in the datasheet.
2 G input Gate terminal of the P-channel power MOSFET (Pin Assignment: G = Gate), which the datasheet specifies only by function, with the gate-source limit of ±20 V given in the absolute maximum ratings.
3 D passive Drain terminal of the P-channel power MOSFET (Pin Assignment: D = Drain), rated at -150 V drain-source voltage (VDSS) in the absolute maximum ratings.

Key specifications

Parameter Value
Manufacturer UTC Unisonic Tech
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDSS -150 V 2
Gate-Source Voltage VGSS -20 20 V 2
Continuous Drain Current ID -0.7 A 2
Pulsed Drain Current IDM -2.8 A Note 2: repetitive rating, pulse width limited by maximum junction temperature 2
Avalanche Current IAR 1.8 A Note 2: repetitive rating, pulse width limited by maximum junction temperature 2
Avalanche Energy Single Pulsed EAS 16 mJ Note 3: L=10mH, IAS=1.8A, VDD=50V, RG=25Ω, Starting TJ=25°C 2
Power Dissipation PD 0.6 W TC = 25°C (table condition) 2
Junction Temperature TJ 150 °C 2
Storage Temperature TSTG -55 150 °C 2
Junction to Ambient thermal resistance θJA 325 °C/W 2
Junction to Case thermal resistance θJC 208 °C/W 2
Drain-Source Breakdown Voltage BVDSS -150 V VGS=0 V, ID=-250µA 2
Drain-Source Leakage Current IDSS -1 µA VDS=-150V, VGS=0V 2
Gate-Source Leakage Current IGSS -100 100 nA VDS=0V, VGS=±20V 2
Gate Threshold Voltage VGS(TH) -2 -4 V VDS=VGS, ID=-250µA 2
Static Drain-Source On-Resistance RDS(ON) 3.1 Ω VGS=-10V, ID=-0.5A 2
Maximum Body-Diode Continuous Current IS -0.7 A 2
Maximum Pulsed Drain-Source Diode Forward Current ISM -2.8 A 2
Diode Forward Voltage VSD -2 V IS=-0.7A, VGS=0V 2

CAD (KiCad official)

  • Symbol: UF07P15G-AE3-R
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: uf07p15g-ae3-r-etched.step / uf07p15g-ae3-r-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); uf07p15g-ae3-r.step / uf07p15g-ae3-r.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: UTC Unisonic Tech datasheet (5 pp, sha256 5ada671489496dea, retrieved 2026-10-10, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF