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UCC28910DR

Texas Instruments · AC-DC Controllers And Regulators · SOIC-7

UCC28910DR from Texas Instruments, in a SOIC-7. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 GND power_in Ground pin is the reference for the controller and the low-side return for the drive output, and AC decoupling should return as close as possible to this pin.
2 GND power_in Ground pin is the reference for the controller and the low-side return for the drive output, shorted together with the other GND pins to pull out FET heat.
3 GND power_in Ground pin is the reference for the controller and the low-side return for the drive output, shorted together with the other GND pins to pull out FET heat.
4 IPK output A resistor RIPK from IPK to GND sets the maximum power FET peak current, and a short to GND selects the internal 600 mA peak for UCC28910.
5 VS power_in Voltage Sense pin receives a divider from the auxiliary winding for output voltage and timing feedback, with the line-sense enable threshold at 210 μA and disable threshold at 75 μA.
6 VDD power_in Controller supply with VDD turn-on UVLO of 9.5 V and turn-off of 6.5 V, operating up to 26 V (VDDCLAMP minimum) and clamp current limited to 10 mA.
8 DRAIN power_in Drain of the internal 700-V power FET, which also supplies the high-voltage start-up current source, with a maximum DRAIN voltage of 700 V.

Key specifications

Parameter Value
Manufacturer Texas Instruments
Package SOIC-7
Category Power Management (PMIC)
Pins 7

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
DRAIN voltage VDRAIN 700 V 7
Negative drain current IDRAIN -100 mA 7
Maximum VDD clamp current IVDD(clp) 10 mA 7
VS voltage range VVS 7 V 7
VIPK voltage range VIPK -0.5 5 V 7
Peak VS pin current (current out of the pin) IVS -1.2 mA 7
Pulsed drain current, UCC28910 IDRAIN 950 mA Maximum pulse width = 100 μs 7
Lead temperature TLEAD 260 °C 1.6 mm (1/16 inch) from case for 10 seconds 7
Operating junction temperature range TJ -55 150 °C 7
Storage temperature Tstg -65 150 °C 7
Current out of the terminal IVS 1 mA 7
Maximum drain peak current, UCC28910 ID(peak_max) 600 mA UCC28910 7
Operating junction temperature TJ -40 125 °C 8
Supply current, run IRUN 2.3 2.9 3.4 mA VVS = 3.9 V, fSW = fSW(max) 8
Quiescent supply current IRUNQ 1.9 2.35 2.8 mA VVS = 3.9 V, fSW = 0 Hz 8
Wait supply current IWAIT 270 370 µA VVS = 4.1 V, fSW = fSW(min), TJ = 25°C 8
Quiescent wait supply current IWAITQ 200 280 µA VVS = 4.1 V, fSW = 0 Hz, TJ = 25°C 8
Supply current before start ISTART 65 90 µA 0 V ≤ VVDD ≤ 5.6 V, VDRAIN = 0 V 8
Supply current after fault IFAULT 190 260 µA fSW = 0 Hz 8
VDD turn-on threshold VDDON 9 9.5 10 V VVDD low to high 8
VDD turn-off threshold VDDOFF 6 6.5 7 V VVDD high to low 8
HV current source start VDDHV(on) 4.8 5.2 5.6 V VVDD high to low 8
UVLO hysteresis ΔVUVLO 2.8 3 3.2 V VDDON, VDDOFF 8
Startup current with VDD shorted to GND ICH1 -300 -100 µA VVDD < 250 mV, VDRAIN = 100 V 8
Sourced current for startup at high VDD ICH2 -9.75 -0.4 mA VVDD = 8 V, VDRAIN = 100 V 8
Sourced current for startup at low VDD ICH3 -13.75 -1.3 mA VVDD = 2 V, VDRAIN = 100 V 8
Regulating level VVSR 4.01 4.05 4.09 V Measured in no load condition, TJ = 25°C 9
Negative clamp level VVSNC -325 -250 -190 mV IVS = -300 μA 9
Input bias current IVS -0.25 0 0.25 µA VVS = 4 V 9
Over-voltage threshold VOVP 4.45 4.6 4.75 V At VS input, TJ = 25°C 9
VS line sense run current IVSL(run) 175 215 260 µA Current out of VS pin, increasing 9
VS line sense stop current IVSL(stop) 60 75 100 µA Current out of VS pin, decreasing 9
Line sense IVS ratio KVSL 2.55 2.7 2.9 A/A IVSL(run) / IVSL(stop) 9
VDD voltage clamp VDDCLP 26 28 30 V IVDDCLP forced = 2 mA 9
VDD clamp over current IVDDCLP_OC 4.65 6 7.65 mA VVDD > 25 V 9
DRAIN over current ID(ocp) 725 850 925 mA IPK pin shorted to GND 9
Equivalent VCST(OCP), ID(ocp) x RIPK VCSTE_OCP 670 770 830 V VVS = 3.9 V 9
Maximum FET on time at high load tONMAX(max) 13 18 24 µs VVS < 3.9 V, IPK shorted to GND 9
Maximum FET on time at low load tONMAX(min) 4.3 6 10 µs VVS > 4.1 V, IPK shorted to GND 9
Power FET on resistance RDS(on) 10.5 12 Ω ID = 150 mA, TJ = 25°C 9
Power FET on resistance RDS(on) 18.4 21.5 Ω ID = 150 mA, TJ = 125°C 9
DRAIN pin leakage current ILEAKAGE 10 µA VDS = 400 V HV, VS = 4.2 V DC, TJ = 25°C 9
DRAIN pin leakage current ILEAKAGE 20 µA VDS = 400 V HV, VS = 4.2 V DC, TJ = 125°C 9
Maximum DRAIN peak current ID_PEAK(max) 582 600 618 mA IPK pin shorted to GND, TJ = 25°C 10
IPK to GND resistance Max to assume IPK shorted to GND RIPK_SHORT 200 Ω 10
IPK to GND minimum resistance RIPK(min) 900 Ω 10
Equivalent current sense threshold, ID_PK(max) × RIPK VCSTE(max) 532 540 548 V VVS = 3.9 V, TJ = 25°C 10
Equivalent current sense threshold, ID_PK(min) × RIPK VCSTE(min) 160 180 200 V VVS = 4.1 V 10
AM control ratio, VCSE(max) / VCSE(min) KAM 2.3 3 3.5 V/V 10
CC regulation constant, VCSET(max) × KCC VCCR 216 223 230 V VVS < 3.9 V, TJ = 25°C 10
Maximum switching frequency fSW(max) 105 115 125 kHz VVS < 3.9 V 10
Minimum switching frequency fSW(min) 360 420 490 Hz VVS > 4.1 V 10
Zero crossing timeout delay tZTO 1.8 2.1 2.65 µs VVS < 3.9 V 10
Junction-to-ambient thermal resistance θJA 102.2 °C/W 8
Junction-to-case (top) thermal resistance θJCtop 39.1 °C/W 8
Junction-to-board thermal resistance θJB 54.7 °C/W 8
Junction-to-top characterization parameter ψJT 5.4 °C/W 8
Junction-to-board characterization parameter ψJB 54.7 °C/W 8

Materials and finish

As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).

Part Material Colour / plating Datasheet says Page
contacts copper (3) Maximum continuous power with open frame design at 50°C ambient, with adequate copper area connected on GND pin and /or 3

CAD (KiCad official)

  • Symbol: UCC28910DR
  • Footprint: Package_SO:SOIC-8-N7_3.9x4.9mm_P1.27mm
  • 3D model: SOIC-7 (KiCad packages3D, STEP)
  • 3D model files: ucc28910dr-etched.step / ucc28910dr-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ucc28910dr.step / ucc28910dr.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Texas Instruments datasheet (56 pp, sha256 cdddf8860e8cc978, retrieved 2026-11-05, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF