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TYN625RG

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STMicroelectronics Thyristors (SCR)/Modules, ITO-220AB-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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TYN625RG

STMicroelectronics · Thyristors (SCR)/Modules · ITO-220AB-3

TYN625RG from STMicroelectronics, in a ITO-220AB-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 K passive Cathode of the SCR, the current return terminal for the 25 A rms on-state current (IT(RMS) 25 A at Tc = 100 °C).
2 A passive Anode of the SCR, connected to the metal tab, and blocks VDRM/VRRM of 600 V for TYN625RG in the off state.
3 G input Gate trigger input with IGT 4 to 40 mA at VD = 12 V, VGT max 1.3 V, and maximum peak reverse gate voltage VRGM of 5 V.

Key specifications

Parameter Value
Manufacturer STMicroelectronics
Package ITO-220AB-3
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Gate trigger current IGT 4 40 mA VD = 12 V, RL = 33 Ω 2
Gate trigger voltage VGT 1.3 V 2
Gate non-trigger voltage VGD 0.2 V VD = VDRM, RL = 3.3 kΩ, Tj = 125 °C 2
Holding current IH 50 mA IT = 500 mA, gate open 2
Latching current IL 90 mA IG = 1.2 x IGT 2
Critical rate of rise of off-state voltage dV/dt 1500 V/µs VD = 67% VDRM, gate open, Tj = 125 °C 2
On-state voltage VTM 1.6 V ITM = 50 A, tp = 380 µs, Tj = 25 °C 2
Threshold voltage Vt0 0.77 V Tj = 125 °C 2
Dynamic resistance Rd 14 mΩ Tj = 125 °C 2
Repetitive peak off-state current IDRM 5 µA VDRM = VRRM, Tj = 25 °C 2
Repetitive peak reverse current IRRM 4 mA VDRM = VRRM, Tj = 125 °C 2
On-state rms current (TO-220AB) IT(RMS) 25 A 180° conduction angle, Tc = 100 °C 2
Average on-state current IT(AV) 16 A 180° conduction angle, Tc = 100 °C 2
Non repetitive surge peak on-state current ITSM 314 A tp = 8.3 ms, Tj = 25 °C 2
Non repetitive surge peak on-state current ITSM 300 A tp = 10 ms, Tj = 25 °C 2
I2t value for fusing I2t 450 A2S tp = 10 ms, Tj = 25 °C 2
Critical rate of rise of on-state current dI/dt 50 A/µs IG = 2 x IGT, tr ≤ 100 ns, F = 60 Hz, Tj = 125 °C 2
Peak gate current IGM 4 A tp = 20 µs, Tj = 125 °C 2
Average gate power dissipation PG(AV) 1 W Tj = 125 °C 2
Storage junction temperature range Tstg -40 150 °C 2
Operating junction temperature range Tj -40 125 °C 2
Maximum peak reverse gate voltage VRGM 5 V 2
Junction to case thermal resistance (DC), TO-220AB Rth(j-c) 1 °C/W DC 3
Junction to ambient thermal resistance (DC), TO-220AB Rth(j-a) 60 °C/W DC, TO-220AB (printed jointly with TO-220AB ins) 3

CAD (KiCad official)

  • Symbol: TYN625RG
  • Footprint: Package_TO_SOT_THT:TO-220F-3_Vertical
  • 3D model: ITO-220AB-3 (KiCad packages3D, STEP)

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: STMicroelectronics datasheet (11 pp, sha256 611af89aa89263d5, retrieved 2026-10-15, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF