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TYN625RG

STMicroelectronics · Thyristors (SCR)/Modules · ITO-220AB-3

TYN625RG from STMicroelectronics, in a ITO-220AB-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin	Name	Type	Function
1	K	passive	Cathode of the SCR, the current return terminal for the 25 A rms on-state current (IT(RMS) 25 A at Tc = 100 °C).
2	A	passive	Anode of the SCR, connected to the metal tab, and blocks VDRM/VRRM of 600 V for TYN625RG in the off state.
3	G	input	Gate trigger input with IGT 4 to 40 mA at VD = 12 V, VGT max 1.3 V, and maximum peak reverse gate voltage VRGM of 5 V.

Key specifications

Parameter	Value
Manufacturer	STMicroelectronics
Package	ITO-220AB-3
Category	Transistors/Thyristors
Pins	3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter	Symbol	Min	Max	Unit	Conditions	Page
Gate trigger current	IGT	4	40	mA	VD = 12 V, RL = 33 Ω	2
Gate trigger voltage	VGT		1.3	V		2
Gate non-trigger voltage	VGD	0.2		V	VD = VDRM, RL = 3.3 kΩ, Tj = 125 °C	2
Holding current	IH		50	mA	IT = 500 mA, gate open	2
Latching current	IL		90	mA	IG = 1.2 x IGT	2
Critical rate of rise of off-state voltage	dV/dt	1500		V/µs	VD = 67% VDRM, gate open, Tj = 125 °C	2
On-state voltage	VTM		1.6	V	ITM = 50 A, tp = 380 µs, Tj = 25 °C	2
Threshold voltage	Vt0		0.77	V	Tj = 125 °C	2
Dynamic resistance	Rd		14	mΩ	Tj = 125 °C	2
Repetitive peak off-state current	IDRM		5	µA	VDRM = VRRM, Tj = 25 °C	2
Repetitive peak reverse current	IRRM		4	mA	VDRM = VRRM, Tj = 125 °C	2
On-state rms current (TO-220AB)	IT(RMS)		25	A	180° conduction angle, Tc = 100 °C	2
Average on-state current	IT(AV)		16	A	180° conduction angle, Tc = 100 °C	2
Non repetitive surge peak on-state current	ITSM		314	A	tp = 8.3 ms, Tj = 25 °C	2
Non repetitive surge peak on-state current	ITSM		300	A	tp = 10 ms, Tj = 25 °C	2
I2t value for fusing	I2t		450	A2S	tp = 10 ms, Tj = 25 °C	2
Critical rate of rise of on-state current	dI/dt		50	A/µs	IG = 2 x IGT, tr ≤ 100 ns, F = 60 Hz, Tj = 125 °C	2
Peak gate current	IGM		4	A	tp = 20 µs, Tj = 125 °C	2
Average gate power dissipation	PG(AV)		1	W	Tj = 125 °C	2
Storage junction temperature range	Tstg	-40	150	°C		2
Operating junction temperature range	Tj	-40	125	°C		2
Maximum peak reverse gate voltage	VRGM		5	V		2
Junction to case thermal resistance (DC), TO-220AB	Rth(j-c)		1	°C/W	DC	3
Junction to ambient thermal resistance (DC), TO-220AB	Rth(j-a)		60	°C/W	DC, TO-220AB (printed jointly with TO-220AB ins)	3

CAD (KiCad official)

Symbol: TYN625RG
Footprint: Package_TO_SOT_THT:TO-220F-3_Vertical
3D model: ITO-220AB-3 (KiCad packages3D, STEP)

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

Datasheet: STMicroelectronics datasheet (11 pp, sha256 611af89aa89263d5, retrieved 2026-10-15, tier: lcsc)
Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF