component
TW1012T
Public Made by Adomby adom
TWGMC MOSFETs, SOT-523. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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TW1012T
TWGMC · MOSFETs · SOT-523
TW1012T from TWGMC, in a SOT-523. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | GATE | input | Gate terminal, with gate-source voltage limited to ±6 V (VGSS) and an internal gate protection diode (ESD protected up to 2 kV). |
| 2 | SOURCE | passive | Source terminal, the MOSFET return for the drain current, in a device rated for a drain-source voltage of 20 V (VDSS). |
| 3 | DRAIN | passive | Drain terminal, rated for 20 V drain-source voltage, with continuous drain current of 0.63 A at TA = 25°C (0.45 A at TA = 85°C) and pulsed drain current of 6 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | TWGMC |
| Package | SOT-523 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDSS | 20 | V | 1 | |||
| Gate-Source Voltage | VGSS | -6 | 6 | V | 1 | ||
| Continuous Drain Current | ID | 0.63 | A | Steady state, TA = 25°C, Note 1 | 1 | ||
| Continuous Drain Current | ID | 0.45 | A | TA = 85°C, Note 1 | 1 | ||
| Pulsed Drain Current | IDM | 6 | A | 1 | |||
| Total Power Dissipation | PD | 0.28 | W | Note 1, device mounted on FR-4 PCB | 1 | ||
| Operating and Storage Temperature Range | TJ, TSTG | -55 | 150 | °C | 1 | ||
| Thermal Resistance, Junction to Ambient | RθJA | 452 | °C/W | Thermal Characteristics table | 1 | ||
| Thermal Resistance, Junction to Ambient (transient thermal graph note) | RθJA | 486 | °C/W | Fig. 11 transient thermal response note | 4 | ||
| Drain-Source Breakdown Voltage | BVDSS | 20 | V | VGS = 0V, ID = 250μA | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 100 | nA | TJ = 25°C, VDS = 20V, VGS = 0V | 2 | ||
| Gate-Source Leakage | IGSS | -1 | 1 | μA | VGS = ±4.5V, VDS = 0V | 2 | |
| Gate Threshold Voltage | VGS(th) | 0.5 | 1 | V | VDS = VGS, ID = 250μA | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 0.3 | 0.4 | Ω | VGS = 4.5V, ID = 600mA | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 0.4 | 0.5 | Ω | VGS = 2.5V, ID = 500mA | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 0.5 | 0.7 | Ω | VGS = 1.8V, ID = 350mA | 2 | |
| Diode Forward Voltage | VSD | 0.7 | 1.2 | V | VGS = 0V, IS = 150mA | 2 |
CAD (KiCad official)
- Symbol:
TW1012T - Footprint:
Package_TO_SOT_SMD:SOT-523 - 3D model: SOT-523, generated from the KiCad footprint (body from the F.Fab outline, terminals on the pads, 0.8 mm nominal SOT-523 height). Neither the vendor nor KiCad ships a 3D model for this package, so the dimensions are nominal, not the manufacturer's CAD (STEP)
- 3D model files:
tw1012t-etched.step/tw1012t-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);tw1012t.step/tw1012t.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: TWGMC datasheet (5 pp, sha256
ffe09adab04e1b55, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# TW1012T
**TWGMC** · MOSFETs · SOT-523
TW1012T from TWGMC, in a SOT-523. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | GATE | input | Gate terminal, with gate-source voltage limited to ±6 V (VGSS) and an internal gate protection diode (ESD protected up to 2 kV). |
| 2 | SOURCE | passive | Source terminal, the MOSFET return for the drain current, in a device rated for a drain-source voltage of 20 V (VDSS). |
| 3 | DRAIN | passive | Drain terminal, rated for 20 V drain-source voltage, with continuous drain current of 0.63 A at TA = 25°C (0.45 A at TA = 85°C) and pulsed drain current of 6 A. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | TWGMC |
| Package | SOT-523 |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDSS | | | 20 | V | | 1 |
| Gate-Source Voltage | VGSS | -6 | | 6 | V | | 1 |
| Continuous Drain Current | ID | | | 0.63 | A | Steady state, TA = 25°C, Note 1 | 1 |
| Continuous Drain Current | ID | | | 0.45 | A | TA = 85°C, Note 1 | 1 |
| Pulsed Drain Current | IDM | | | 6 | A | | 1 |
| Total Power Dissipation | PD | | | 0.28 | W | Note 1, device mounted on FR-4 PCB | 1 |
| Operating and Storage Temperature Range | TJ, TSTG | -55 | | 150 | °C | | 1 |
| Thermal Resistance, Junction to Ambient | RθJA | | | 452 | °C/W | Thermal Characteristics table | 1 |
| Thermal Resistance, Junction to Ambient (transient thermal graph note) | RθJA | | | 486 | °C/W | Fig. 11 transient thermal response note | 4 |
| Drain-Source Breakdown Voltage | BVDSS | 20 | | | V | VGS = 0V, ID = 250μA | 2 |
| Zero Gate Voltage Drain Current | IDSS | | | 100 | nA | TJ = 25°C, VDS = 20V, VGS = 0V | 2 |
| Gate-Source Leakage | IGSS | -1 | | 1 | μA | VGS = ±4.5V, VDS = 0V | 2 |
| Gate Threshold Voltage | VGS(th) | 0.5 | | 1 | V | VDS = VGS, ID = 250μA | 2 |
| Static Drain-Source On-Resistance | RDS(ON) | | 0.3 | 0.4 | Ω | VGS = 4.5V, ID = 600mA | 2 |
| Static Drain-Source On-Resistance | RDS(ON) | | 0.4 | 0.5 | Ω | VGS = 2.5V, ID = 500mA | 2 |
| Static Drain-Source On-Resistance | RDS(ON) | | 0.5 | 0.7 | Ω | VGS = 1.8V, ID = 350mA | 2 |
| Diode Forward Voltage | VSD | | 0.7 | 1.2 | V | VGS = 0V, IS = 150mA | 2 |
## CAD (KiCad official)
- Symbol: `TW1012T`
- Footprint: `Package_TO_SOT_SMD:SOT-523`
- 3D model: SOT-523, generated from the KiCad footprint (body from the F.Fab outline, terminals on the pads, 0.8 mm nominal SOT-523 height). Neither the vendor nor KiCad ships a 3D model for this package, so the dimensions are nominal, not the manufacturer's CAD (STEP)
- 3D model files: `tw1012t-etched.step` / `tw1012t-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `tw1012t.step` / `tw1012t.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [TWGMC datasheet](docs/tw1012t-datasheet.pdf) (5 pp, sha256 `ffe09adab04e1b55`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/tw1012t-datasheet.pdf)