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TW1012T

TWGMC · MOSFETs · SOT-523

TW1012T from TWGMC, in a SOT-523. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 GATE input Gate terminal, with gate-source voltage limited to ±6 V (VGSS) and an internal gate protection diode (ESD protected up to 2 kV).
2 SOURCE passive Source terminal, the MOSFET return for the drain current, in a device rated for a drain-source voltage of 20 V (VDSS).
3 DRAIN passive Drain terminal, rated for 20 V drain-source voltage, with continuous drain current of 0.63 A at TA = 25°C (0.45 A at TA = 85°C) and pulsed drain current of 6 A.

Key specifications

Parameter Value
Manufacturer TWGMC
Package SOT-523
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDSS 20 V 1
Gate-Source Voltage VGSS -6 6 V 1
Continuous Drain Current ID 0.63 A Steady state, TA = 25°C, Note 1 1
Continuous Drain Current ID 0.45 A TA = 85°C, Note 1 1
Pulsed Drain Current IDM 6 A 1
Total Power Dissipation PD 0.28 W Note 1, device mounted on FR-4 PCB 1
Operating and Storage Temperature Range TJ, TSTG -55 150 °C 1
Thermal Resistance, Junction to Ambient RθJA 452 °C/W Thermal Characteristics table 1
Thermal Resistance, Junction to Ambient (transient thermal graph note) RθJA 486 °C/W Fig. 11 transient thermal response note 4
Drain-Source Breakdown Voltage BVDSS 20 V VGS = 0V, ID = 250μA 2
Zero Gate Voltage Drain Current IDSS 100 nA TJ = 25°C, VDS = 20V, VGS = 0V 2
Gate-Source Leakage IGSS -1 1 μA VGS = ±4.5V, VDS = 0V 2
Gate Threshold Voltage VGS(th) 0.5 1 V VDS = VGS, ID = 250μA 2
Static Drain-Source On-Resistance RDS(ON) 0.3 0.4 Ω VGS = 4.5V, ID = 600mA 2
Static Drain-Source On-Resistance RDS(ON) 0.4 0.5 Ω VGS = 2.5V, ID = 500mA 2
Static Drain-Source On-Resistance RDS(ON) 0.5 0.7 Ω VGS = 1.8V, ID = 350mA 2
Diode Forward Voltage VSD 0.7 1.2 V VGS = 0V, IS = 150mA 2

CAD (KiCad official)

  • Symbol: TW1012T
  • Footprint: Package_TO_SOT_SMD:SOT-523
  • 3D model: SOT-523, generated from the KiCad footprint (body from the F.Fab outline, terminals on the pads, 0.8 mm nominal SOT-523 height). Neither the vendor nor KiCad ships a 3D model for this package, so the dimensions are nominal, not the manufacturer's CAD (STEP)
  • 3D model files: tw1012t-etched.step / tw1012t-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); tw1012t.step / tw1012t.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: TWGMC datasheet (5 pp, sha256 ffe09adab04e1b55, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF