# TSP630M

**Truesemi** · MOSFETs · TO-220

TSP630M from Truesemi, in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; controls the channel, with threshold VGS(th) 2.0 to 4.0 V at ID = 250 uA and absolute maximum VGS of ±30 V. |
| 2 | D | passive | Drain; rated for VDSS of 200 V and continuous drain current of 9.5 A at TC = 25℃ (pulsed 38 A), and connected to the tab. |
| 3 | S | passive | Source; the body diode runs from source to drain with continuous forward current IS of 9.5 A and VSD max 1.5 V. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | Truesemi |
| Package | TO-220 |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDSS |  |  | 200 | V | TJ=25℃ | 1 |
| Gate-Source Voltage | VGS | -30 |  | 30 | V | TJ=25℃ | 1 |
| Drain Current | ID |  |  | 9.5 | A | TC = 25℃ | 1 |
| Drain Current | ID |  |  | 6 | A | TC = 100℃ | 1 |
| Pulsed Drain Current | IDM |  |  | 38 | A | Note 1 | 1 |
| Single Pulsed Avalanche Energy | EAS |  |  | 210 | mJ | Note 2 | 1 |
| Repetitive Avalanche Energy | EAR |  |  | 7.2 | mJ | Note 1 | 1 |
| Peak Diode Recovery dv/dt | dv/dt |  |  | 5.5 | V/ns | Note 3 | 1 |
| Power Dissipation | PD |  |  | 72 | W | TC = 25℃ | 1 |
| Power Dissipation Derate above 25℃ | PD |  |  | 0.57 | W/℃ | Derate above 25℃ | 1 |
| Operating and Storage Temperature Range | TJ, TSTG | -55 |  | 150 | ℃ |  | 1 |
| Maximum lead temperature for soldering | TL |  |  | 300 | ℃ | 1/8" from case for 5 seconds | 1 |
| Thermal Resistance, Junction-to-Case | RθJC |  |  | 1.74 | ℃/W |  | 1 |
| Thermal Resistance, Case-to-Sink | RθCS |  | 0.5 |  | ℃/W | Typ. | 1 |
| Thermal Resistance, Junction-to-Ambient | RθJA |  |  | 62.5 | ℃/W |  | 1 |
| Continuous Source-Drain Diode Forward Current | IS |  |  | 9.5 | A |  | 2 |
| Pulsed Source-Drain Diode Forward Current | ISM |  |  | 39 | A |  | 2 |
| Source-Drain Diode Forward Voltage | VSD |  |  | 1.5 | V | IS = 9.5 A, VGS = 0 V | 2 |
| Drain-Source Breakdown Voltage | BVDSS | 200 |  |  | V | VGS = 0 V, ID = 250 uA | 2 |
| Zero Gate Voltage Drain Current | IDSS |  |  | 1 | uA | VDS = 200 V, VGS = 0 V | 2 |
| Zero Gate Voltage Drain Current | IDSS |  |  | 10 | uA | VDS = 160 V, TJ = 125℃ | 2 |
| Gate-Body Leakage Current, Forward | IGSSF |  |  | 100 | nA | VGS = 30 V, VDS = 0 V | 2 |
| Gate-Body Leakage Current, Reverse | IGSSR | -100 |  |  | nA | VGS =- 30 V, VDS = 0 V | 2 |
| Gate Threshold Voltage | VGS | 2 |  | 4 | V | VDS = VGS, ID = 250 uA | 2 |
| Static Drain-Source On-Resistance | RDS(ON) |  | 0.34 | 0.4 | Ω | VGS = 10 V, ID = 4.75 A | 2 |
| Breakdown Voltage Temperature Coefficient | △BVDSS/△TJ |  | 0.25 |  | V/℃ | ID = 250 uA, Referenced to 25℃ | 2 |
| Reverse Recovery Time | trr |  | 160 |  | ns | IS = 9.5 A, VGS = 0 V, diF/dt = 100 A/μs (Note 4) | 2 |
| Reverse Recovery Charge | Qrr |  | 1 |  | uC | IS = 9.5 A, VGS = 0 V, diF/dt = 100 A/μs (Note 4) | 2 |
| Input Capacitance | Ciss |  | 400 |  | pF | VDS = 25 V, VGS = 0 V, f = 1.0 MHz | 2 |
| Output Capacitance | Coss |  | 100 |  | pF | VDS = 25 V, VGS = 0 V, f = 1.0 MHz | 2 |
| Reverse Transfer Capacitance | Crss |  | 40 |  | pF | VDS = 25 V, VGS = 0 V, f = 1.0 MHz | 2 |
| Turn-On Time | td(on) |  | 10 |  | ns | VDS = 100 V, ID = 9.5 A, RG = 25 Ω (Note 4,5) | 2 |
| Turn-On Rise Time | tr |  | 90 |  | ns | VDS = 100 V, ID = 9.5 A, RG = 25 Ω (Note 4,5) | 2 |
| Turn-Off Delay Time | td(off) |  | 70 |  | ns | VDS = 100 V, ID = 9.5 A, RG = 25 Ω (Note 4,5) | 2 |
| Turn-Off Fall Time | tf |  | 70 |  | ns | VDS = 100 V, ID = 9.5 A, RG = 25 Ω (Note 4,5) | 2 |
| Total Gate Charge | Qg |  | 20 |  | nC | VDS = 160 V, ID = 9.5A, VGS = 10 V (Note 4,5) | 2 |
| Gate-Source Charge | Qgs |  | 3 |  | nC | VDS = 160 V, ID = 9.5A, VGS = 10 V (Note 4,5) | 2 |
| Gate-Drain Charge | Qgd |  | 10 |  | nC | VDS = 160 V, ID = 9.5A, VGS = 10 V (Note 4,5) | 2 |

## CAD (KiCad official)

- Symbol: `TSP630M`
- Footprint: `Package_TO_SOT_THT:TO-220-3_Vertical`
- 3D model: TO-220 (KiCad packages3D, STEP)
- 3D model files: `tsp630m-etched.step` / `tsp630m-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `tsp630m.step` / `tsp630m.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [Truesemi datasheet](docs/tsp630m-datasheet.pdf) (9 pp, sha256 `1624e2a5c3c4aac8`, retrieved 2026-10-23, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/tsp630m-datasheet.pdf)