component
TSP630M
Public Made by Adomby adom
Truesemi MOSFETs, TO-220. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownTSP630M
Truesemi · MOSFETs · TO-220
TSP630M from Truesemi, in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; controls the channel, with threshold VGS(th) 2.0 to 4.0 V at ID = 250 uA and absolute maximum VGS of ±30 V. |
| 2 | D | passive | Drain; rated for VDSS of 200 V and continuous drain current of 9.5 A at TC = 25℃ (pulsed 38 A), and connected to the tab. |
| 3 | S | passive | Source; the body diode runs from source to drain with continuous forward current IS of 9.5 A and VSD max 1.5 V. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Truesemi |
| Package | TO-220 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDSS | 200 | V | TJ=25℃ | 1 | ||
| Gate-Source Voltage | VGS | -30 | 30 | V | TJ=25℃ | 1 | |
| Drain Current | ID | 9.5 | A | TC = 25℃ | 1 | ||
| Drain Current | ID | 6 | A | TC = 100℃ | 1 | ||
| Pulsed Drain Current | IDM | 38 | A | Note 1 | 1 | ||
| Single Pulsed Avalanche Energy | EAS | 210 | mJ | Note 2 | 1 | ||
| Repetitive Avalanche Energy | EAR | 7.2 | mJ | Note 1 | 1 | ||
| Peak Diode Recovery dv/dt | dv/dt | 5.5 | V/ns | Note 3 | 1 | ||
| Power Dissipation | PD | 72 | W | TC = 25℃ | 1 | ||
| Power Dissipation Derate above 25℃ | PD | 0.57 | W/℃ | Derate above 25℃ | 1 | ||
| Operating and Storage Temperature Range | TJ, TSTG | -55 | 150 | ℃ | 1 | ||
| Maximum lead temperature for soldering | TL | 300 | ℃ | 1/8" from case for 5 seconds | 1 | ||
| Thermal Resistance, Junction-to-Case | RθJC | 1.74 | ℃/W | 1 | |||
| Thermal Resistance, Case-to-Sink | RθCS | 0.5 | ℃/W | Typ. | 1 | ||
| Thermal Resistance, Junction-to-Ambient | RθJA | 62.5 | ℃/W | 1 | |||
| Continuous Source-Drain Diode Forward Current | IS | 9.5 | A | 2 | |||
| Pulsed Source-Drain Diode Forward Current | ISM | 39 | A | 2 | |||
| Source-Drain Diode Forward Voltage | VSD | 1.5 | V | IS = 9.5 A, VGS = 0 V | 2 | ||
| Drain-Source Breakdown Voltage | BVDSS | 200 | V | VGS = 0 V, ID = 250 uA | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | uA | VDS = 200 V, VGS = 0 V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 10 | uA | VDS = 160 V, TJ = 125℃ | 2 | ||
| Gate-Body Leakage Current, Forward | IGSSF | 100 | nA | VGS = 30 V, VDS = 0 V | 2 | ||
| Gate-Body Leakage Current, Reverse | IGSSR | -100 | nA | VGS =- 30 V, VDS = 0 V | 2 | ||
| Gate Threshold Voltage | VGS | 2 | 4 | V | VDS = VGS, ID = 250 uA | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 0.34 | 0.4 | Ω | VGS = 10 V, ID = 4.75 A | 2 | |
| Breakdown Voltage Temperature Coefficient | △BVDSS/△TJ | 0.25 | V/℃ | ID = 250 uA, Referenced to 25℃ | 2 | ||
| Reverse Recovery Time | trr | 160 | ns | IS = 9.5 A, VGS = 0 V, diF/dt = 100 A/μs (Note 4) | 2 | ||
| Reverse Recovery Charge | Qrr | 1 | uC | IS = 9.5 A, VGS = 0 V, diF/dt = 100 A/μs (Note 4) | 2 | ||
| Input Capacitance | Ciss | 400 | pF | VDS = 25 V, VGS = 0 V, f = 1.0 MHz | 2 | ||
| Output Capacitance | Coss | 100 | pF | VDS = 25 V, VGS = 0 V, f = 1.0 MHz | 2 | ||
| Reverse Transfer Capacitance | Crss | 40 | pF | VDS = 25 V, VGS = 0 V, f = 1.0 MHz | 2 | ||
| Turn-On Time | td(on) | 10 | ns | VDS = 100 V, ID = 9.5 A, RG = 25 Ω (Note 4,5) | 2 | ||
| Turn-On Rise Time | tr | 90 | ns | VDS = 100 V, ID = 9.5 A, RG = 25 Ω (Note 4,5) | 2 | ||
| Turn-Off Delay Time | td(off) | 70 | ns | VDS = 100 V, ID = 9.5 A, RG = 25 Ω (Note 4,5) | 2 | ||
| Turn-Off Fall Time | tf | 70 | ns | VDS = 100 V, ID = 9.5 A, RG = 25 Ω (Note 4,5) | 2 | ||
| Total Gate Charge | Qg | 20 | nC | VDS = 160 V, ID = 9.5A, VGS = 10 V (Note 4,5) | 2 | ||
| Gate-Source Charge | Qgs | 3 | nC | VDS = 160 V, ID = 9.5A, VGS = 10 V (Note 4,5) | 2 | ||
| Gate-Drain Charge | Qgd | 10 | nC | VDS = 160 V, ID = 9.5A, VGS = 10 V (Note 4,5) | 2 |
CAD (KiCad official)
- Symbol:
TSP630M - Footprint:
Package_TO_SOT_THT:TO-220-3_Vertical - 3D model: TO-220 (KiCad packages3D, STEP)
- 3D model files:
tsp630m-etched.step/tsp630m-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);tsp630m.step/tsp630m.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Truesemi datasheet (9 pp, sha256
1624e2a5c3c4aac8, retrieved 2026-10-23, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).