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TSP40N30M

Truesemi · MOSFETs · TO-220

TSP40N30M from Truesemi, in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; gate-source voltage limited to ±30 V, with threshold of 2.0 to 4.0 V at ID = 250 uA.
2 D passive Drain; rated 300 V drain-source with 40 A continuous drain current at TC = 25 C (the tab is not described in the datasheet text).
3 S passive Source; body diode continuous forward current is 40 A and pulsed 120 A.

Key specifications

Parameter Value
Manufacturer Truesemi
Package TO-220
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDSS 300 V TC=25℃ 1
Gate-Source Voltage VGS -30 30 V TC=25℃ 1
Drain Current ID 40 A TC = 25℃ 1
Drain Current ID 25 A TC = 100℃ 1
Pulsed Drain Current IDM 120 A TC=25℃ 1
Single Pulsed Avalanche Energy EAS 820 mJ L=1mH, IAS=37A, VDD=50V, RG=25Ω, Starting TJ=25°C 1
Repetitive Avalanche Energy EAR 15 mJ Pulse width limited by safe operating area 1
Repetitive Avalanche current IAR 37 A Pulse width limited by safe operating area 1
Power Dissipation PD 150 W TC = 25℃ 1
Operating and Storage Temperature Range TJ, TSTG -55 150 ℃ 1
Thermal Resistance, Junction-to-Case RθJC 0.83 ℃/W 1
Thermal Resistance, Junction-to-Ambient RθJA 62.5 ℃/W 1
Gate Threshold Voltage VGS(th) 2 4 V VDS = VGS, ID = 250 uA 2
Static Drain-Source On-Resistance RDS(ON) 0.12 0.145 Ω VGS = 10 V, ID = 20A 2
Drain-Source Breakdown Voltage BVDSS 300 V VGS = 0 V, ID = 250 uA 2
Zero Gate Voltage Drain Current IDSS 1 uA VDS = 300 V, VGS = 0 V 2
Zero Gate Voltage Drain Current IDSS 100 uA VDS =300 V, TC = 125℃ 2
Gate-Body Leakage Current, Forward IGSSF 100 nA VGS = 30 V, VDS = 0 V 2
Gate-Body Leakage Current, Reverse IGSSR -100 nA VGS =- 30 V, VDS = 0 V 2
Continuous Source-Drain Diode Forward Current IS 40 A 2
Pulsed Source-Drain Diode Forward Current ISM 120 A 2
Source-Drain Diode Forward Voltage VSD 1.4 V ISD =40A, VGS = 0 V 2
Forward transfer conductance gfs 25 S VDS = 10V, ID = 20A 2
Input Capacitance Ciss 2958 pF VDS = 25 V, VGS = 0 V, f = 1.0 MHz 2
Output Capacitance Coss 282 pF VDS = 25 V, VGS = 0 V, f = 1.0 MHz 2
Reverse Transfer Capacitance Crss 31 pF VDS = 25 V, VGS = 0 V, f = 1.0 MHz 2
Turn-On Time td(on) 45 ns VDS = 200 V, ID = 20 A, RG = 25 Ω 2
Turn-On Rise Time tr 30 ns VDS = 200 V, ID = 20 A, RG = 25 Ω 2
Turn-Off Delay Time td(off) 162 ns VDS = 200 V, ID = 20 A, RG = 25 Ω 2
Turn-Off Fall Time tf 38 ns VDS = 200 V, ID = 20 A, RG = 25 Ω 2
Total Gate Charge Qg 60 nC VDS = 240 V, ID =40A, VGS = 10 V 2
Gate-Source Charge Qgs 15 nC VDS = 240 V, ID =40A, VGS = 10 V 2
Gate-Drain Charge Qgd 22 nC VDS = 240 V, ID =40A, VGS = 10 V 2
Reverse Recovery Time trr 321 ns ISD = 40A, VGS = 0 V, diF/dt = 100 A/μs 2
Reverse Recovery Charge Qrr 2.6 uC ISD = 40A, VGS = 0 V, diF/dt = 100 A/μs 2

CAD (KiCad official)

  • Symbol: TSP40N30M
  • Footprint: Package_TO_SOT_THT:TO-220-3_Vertical
  • 3D model: TO-220 (KiCad packages3D, STEP)
  • 3D model files: tsp40n30m-etched.step / tsp40n30m-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); tsp40n30m.step / tsp40n30m.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Truesemi datasheet (6 pp, sha256 098f2fa3e4438500, retrieved 2026-10-27, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF