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TSP16N25M

Public Made by Adom

by adom

Truesemi MOSFETs, TO-220. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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TSP16N25M

Truesemi · MOSFETs · TO-220

TSP16N25M from Truesemi, in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; gate-source voltage limited to ±30 V, threshold 2.0 to 4.0 V at ID=250uA.
2 D passive Drain; 250 V drain-source voltage rating, 16 A continuous drain current at TC=25°C (64 A pulsed), connected to the tab.
3 S passive Source; 16 A continuous source current through the body diode (64 A pulsed), forward voltage max 1.4 V.

Key specifications

Parameter Value
Manufacturer Truesemi
Package TO-220
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-source voltage VDSS 250 V 1
Gate-source voltage VGSS -30 30 V 1
Drain current (DC) ID 16 A TC=25℃ 1
Drain current (DC) ID 7.2 A TC=100℃ 1
Drain current (Pulsed) IDM 64 A 1
Power dissipation PD 85 W 1
Avalanche current (Single) IAS 16 A 1
Single pulsed avalanche energy EAS 480 mJ L=3.0mH, IAS=16A, VDD=50V, RG=25Ω, Starting TJ=25℃ 1
Avalanche current (Repetitive) IAR 16 A 1
Repetitive avalanche energy EAR 13.9 mJ 1
Junction temperature TJ 150 °C 1
Storage temperature range Tstg -55 150 °C 1
Thermal resistance junction-case Rth(J-C) 1.47 ℃/W 1
Thermal resistance junction-ambient Rth(J-A) 62.5 ℃/W 1
Drain-source breakdown voltage BVDSS 250 V ID=250uA, VGS=0V 2
Gate threshold voltage VGS(th) 2 4 V ID=250uA, VDS=VGS 2
Drain-source cut-off current IDSS 1 uA VDS=250V, VGS=0V 2
Gate leakage current IGSS -100 100 nA VDS=0V, VGS=±30V 2
Drain-source on-resistance RDS(on) 0.22 0.25 Ω VGS=10V, ID=8.0A 2
Input capacitance Ciss 968 1275 pF VGS=0V, VDS=25V, f=1 MHz 2
Output capacitance Coss 204 278 pF VGS=0V, VDS=25V, f=1 MHz 2
Reverse transfer capacitance Crss 49 64 pF VGS=0V, VDS=25V, f=1 MHz 2
Total gate charge Qg 45 50 nC VDS=200V, VGS=10V, ID=16A 2
Source current (DC) IS 16 A Integral reverse diode in the MOSFET 2
Source current (Pulsed) ISM 64 A Integral reverse diode in the MOSFET 2
Forward voltage VSD 1.4 V VGS=0V, IS=16A 2
Forward transfer conductance gfs 10.5 S VDS=10V, ID=8.0A 2
Turn-on delay time td(on) 15 ns VDD=125V, ID=16A, RG=25Ω 2
Rise time tr 45 ns VDD=125V, ID=16A, RG=25Ω 2
Turn-off delay time td(off) 50 ns VDD=125V, ID=16A, RG=25Ω 2
Fall time tf 50 ns VDD=125V, ID=16A, RG=25Ω 2
Gate-source charge Qgs 7.1 nC VDS=200V, VGS=10V, ID=16A 2
Gate-drain charge Qgd 5.9 nC VDS=200V, VGS=10V, ID=16A 2
Reverse recovery time trr 208 ns IS=16A, VGS=0V, dIF/dt=100A/us 2
Reverse recovery charge Qrr 2.63 uC IS=16A, VGS=0V, dIF/dt=100A/us 2

CAD (KiCad official)

  • Symbol: TSP16N25M
  • Footprint: Package_TO_SOT_THT:TO-220-3_Vertical
  • 3D model: TO-220 (KiCad packages3D, STEP)
  • 3D model files: tsp16n25m-etched.step / tsp16n25m-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); tsp16n25m.step / tsp16n25m.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Truesemi datasheet (6 pp, sha256 4ae7f023fbab6877, retrieved 2026-10-27, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF