component
TSP16N25M
Public Made by Adomby adom
Truesemi MOSFETs, TO-220. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
Open in new tab ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.
Symbol & Footprint
Schematic Symbol
Open full view ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
PCB Footprint
Open full view ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
Datasheet
Open in new tab ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
README
markdownTSP16N25M
Truesemi · MOSFETs · TO-220
TSP16N25M from Truesemi, in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage limited to ±30 V, threshold 2.0 to 4.0 V at ID=250uA. |
| 2 | D | passive | Drain; 250 V drain-source voltage rating, 16 A continuous drain current at TC=25°C (64 A pulsed), connected to the tab. |
| 3 | S | passive | Source; 16 A continuous source current through the body diode (64 A pulsed), forward voltage max 1.4 V. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Truesemi |
| Package | TO-220 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source voltage | VDSS | 250 | V | 1 | |||
| Gate-source voltage | VGSS | -30 | 30 | V | 1 | ||
| Drain current (DC) | ID | 16 | A | TC=25℃ | 1 | ||
| Drain current (DC) | ID | 7.2 | A | TC=100℃ | 1 | ||
| Drain current (Pulsed) | IDM | 64 | A | 1 | |||
| Power dissipation | PD | 85 | W | 1 | |||
| Avalanche current (Single) | IAS | 16 | A | 1 | |||
| Single pulsed avalanche energy | EAS | 480 | mJ | L=3.0mH, IAS=16A, VDD=50V, RG=25Ω, Starting TJ=25℃ | 1 | ||
| Avalanche current (Repetitive) | IAR | 16 | A | 1 | |||
| Repetitive avalanche energy | EAR | 13.9 | mJ | 1 | |||
| Junction temperature | TJ | 150 | °C | 1 | |||
| Storage temperature range | Tstg | -55 | 150 | °C | 1 | ||
| Thermal resistance junction-case | Rth(J-C) | 1.47 | ℃/W | 1 | |||
| Thermal resistance junction-ambient | Rth(J-A) | 62.5 | ℃/W | 1 | |||
| Drain-source breakdown voltage | BVDSS | 250 | V | ID=250uA, VGS=0V | 2 | ||
| Gate threshold voltage | VGS(th) | 2 | 4 | V | ID=250uA, VDS=VGS | 2 | |
| Drain-source cut-off current | IDSS | 1 | uA | VDS=250V, VGS=0V | 2 | ||
| Gate leakage current | IGSS | -100 | 100 | nA | VDS=0V, VGS=±30V | 2 | |
| Drain-source on-resistance | RDS(on) | 0.22 | 0.25 | Ω | VGS=10V, ID=8.0A | 2 | |
| Input capacitance | Ciss | 968 | 1275 | pF | VGS=0V, VDS=25V, f=1 MHz | 2 | |
| Output capacitance | Coss | 204 | 278 | pF | VGS=0V, VDS=25V, f=1 MHz | 2 | |
| Reverse transfer capacitance | Crss | 49 | 64 | pF | VGS=0V, VDS=25V, f=1 MHz | 2 | |
| Total gate charge | Qg | 45 | 50 | nC | VDS=200V, VGS=10V, ID=16A | 2 | |
| Source current (DC) | IS | 16 | A | Integral reverse diode in the MOSFET | 2 | ||
| Source current (Pulsed) | ISM | 64 | A | Integral reverse diode in the MOSFET | 2 | ||
| Forward voltage | VSD | 1.4 | V | VGS=0V, IS=16A | 2 | ||
| Forward transfer conductance | gfs | 10.5 | S | VDS=10V, ID=8.0A | 2 | ||
| Turn-on delay time | td(on) | 15 | ns | VDD=125V, ID=16A, RG=25Ω | 2 | ||
| Rise time | tr | 45 | ns | VDD=125V, ID=16A, RG=25Ω | 2 | ||
| Turn-off delay time | td(off) | 50 | ns | VDD=125V, ID=16A, RG=25Ω | 2 | ||
| Fall time | tf | 50 | ns | VDD=125V, ID=16A, RG=25Ω | 2 | ||
| Gate-source charge | Qgs | 7.1 | nC | VDS=200V, VGS=10V, ID=16A | 2 | ||
| Gate-drain charge | Qgd | 5.9 | nC | VDS=200V, VGS=10V, ID=16A | 2 | ||
| Reverse recovery time | trr | 208 | ns | IS=16A, VGS=0V, dIF/dt=100A/us | 2 | ||
| Reverse recovery charge | Qrr | 2.63 | uC | IS=16A, VGS=0V, dIF/dt=100A/us | 2 |
CAD (KiCad official)
- Symbol:
TSP16N25M - Footprint:
Package_TO_SOT_THT:TO-220-3_Vertical - 3D model: TO-220 (KiCad packages3D, STEP)
- 3D model files:
tsp16n25m-etched.step/tsp16n25m-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);tsp16n25m.step/tsp16n25m.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Truesemi datasheet (6 pp, sha256
4ae7f023fbab6877, retrieved 2026-10-27, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).