# TPS62293DRVR

**Texas Instruments** · DC-DC Converters · WSON-6-EP(2x2)

TPS62293DRVR from Texas Instruments, in a WSON-6-EP(2x2). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | SW | output | Switch pin connected to the internal MOSFET switches; connect the external inductor between this pin and the output capacitor. |
| 2 | MODE | input | A high level forces fixed-frequency PWM mode, and a low level enables power save mode with automatic transition from PFM mode to fixed-frequency PWM mode. |
| 3 | FB | input | Feedback pin for the internal regulation loop; connect the external resistor divider here, or connect it directly to the output capacitor for the fixed output voltage option. |
| 4 | EN | input | Enable pin; pulling it low forces shutdown mode and pulling it high enables the device, and this pin must be terminated. |
| 5 | VIN | power_in | Input voltage supply pin; the recommended supply voltage range is 2.3 V to 6 V. |
| 6 | GND | power_in | Ground supply pin. |
| 7 | EP | passive | Exposed pad (from the footprint; not named in the datasheet pin table). |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | Texas Instruments |
| Package | WSON-6-EP(2x2) |
| Category | Power Management (PMIC) |
| Pins | 7 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Input voltage | VIN | 2.3 |  | 6 | V | Supply voltage | 4 |
| Input voltage range (absolute maximum) | VIN | -0.3 |  | 7 | V | Input voltage range | 4 |
| Voltage at SW (absolute maximum) | SW | -0.3 |  | 7 | V | Voltage at SW | 4 |
| Voltage range at EN, MODE (absolute maximum) | EN, MODE | -0.3 |  | 7 | V | VIN +0.3, ≤ 7 V | 4 |
| Maximum operating junction temperature | TJ | -40 |  | 125 | °C |  | 4 |
| Storage temperature | Tstg | -65 |  | 150 | °C |  | 4 |
| Operating ambient temperature | TA | -40 |  | 85 | °C |  | 4 |
| Operating junction temperature | TJ | -40 |  | 125 | °C |  | 4 |
| Input voltage supply range | VIN | 2.3 |  | 6 | V |  | 5 |
| Output current | IOUT |  |  | 1000 | mA | VIN 2.7 V to 6 V | 5 |
| Output current | IOUT |  |  | 600 | mA | VIN 2.5 V to 2.7 V | 5 |
| Output current | IOUT |  |  | 300 | mA | VIN 2.3 V to 2.5 V | 5 |
| Shutdown current | ISD |  | 0.1 | 1 | μA | EN = GND | 5 |
| Undervoltage lockout threshold falling | UVLO |  | 1.85 |  | V | Falling | 5 |
| Undervoltage lockout threshold rising | UVLO |  | 1.95 |  | V | Rising | 5 |
| High level input voltage EN, MODE | VIH | 1 |  |  | V | 2.3 V ≤ VIN ≤ 6 V | 5 |
| Low level input voltage EN, MODE | VIL | 0 |  | 0.4 | V | 2.3 V ≤ VIN ≤ 6 V | 5 |
| Input bias current EN, MODE | IIN |  | 0.01 | 1 | μA | EN, MODE = GND or VIN | 5 |
| High side MOSFET on-resistance | RDS(on) |  | 240 | 480 | mΩ | VIN = VGS = 3.6 V, TA = 25°C | 5 |
| Low side MOSFET on-resistance | RDS(on) |  | 185 | 380 | mΩ | VIN = VGS = 3.6 V | 5 |
| Forward current limit MOSFET | ILIMF | 1.19 | 1.4 | 1.68 | A | VIN = VGS = 3.6 V | 5 |
| Oscillator frequency | fSW | 2 | 2.25 | 2.5 | MHz | 2.3 V ≤ VIN ≤ 6 V | 5 |
| Feedback voltage PWM mode | VFB(PWM) | -1.5 | 0 | 1.5 | % | MODE = VIN, PWM operation, 2.3 V ≤ VIN ≤ 6 V | 5 |
| Load regulation |  |  | -0.5 |  | %/A |  | 5 |
| Feedback voltage PFM mode | VFB(PFM) |  | 1 |  | % | MODE = GND, device in PFM mode, +1% voltage positioning active | 5 |
| Operating quiescent current | IQ |  | 15 |  | μA | IOUT = 0 mA, PFM mode enabled (MODE = GND) device not switching | 5 |
| Operating quiescent current PWM | IQ |  | 3.8 |  | mA | IOUT = 0 mA, switching with no load (MODE = VIN) PWM operation, VOUT = 1.8 V, VIN = 3 V | 5 |
| Thermal shutdown | TSD |  | 140 |  | °C | Increasing junction temperature | 5 |
| Thermal shutdown hysteresis | TSD |  | 20 |  | °C | Decreasing junction temperature | 5 |
| Start-up time | tStart Up |  | 500 |  | μs | Time from active EN to reach 95% of VOUT | 5 |
| VOUT ramp-up time | tRamp |  | 250 |  | μs | Time to ramp from 5% to 95% of VOUT | 5 |
| Leakage current into SW pin | Ilkg |  | 0.1 | 1 | μA | VIN = 3.6 V, VIN = VOUT = VSW, EN = GND | 5 |
| Junction-to-ambient thermal resistance | RθJA |  | 67.8 |  | °C/W |  | 4 |
| Junction-to-case (top) thermal resistance | RθJC(top) |  | 88.6 |  | °C/W |  | 4 |
| Junction-to-board thermal resistance | RθJB |  | 37.2 |  | °C/W |  | 4 |
| Junction-to-top characterization parameter | ψJT |  | 2 |  | °C/W |  | 4 |
| Junction-to-board characterization parameter | ψJB |  | 37.6 |  | °C/W |  | 4 |
| Junction-to-case (bottom) thermal resistance | RθJC(bot) |  | 7.9 |  | °C/W |  | 4 |

## CAD (KiCad official)

- Symbol: `TPS62293DRVR`
- Footprint: `Package_SON:WSON-6-1EP_2x2mm_P0.65mm_EP1x1.6mm`
- 3D model: WSON-6-EP(2x2) (KiCad packages3D, STEP)
- 3D model files: `tps62293drvr-etched.step` / `tps62293drvr-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `tps62293drvr.step` / `tps62293drvr.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [Texas Instruments datasheet](https://www.ti.com/lit/ds/symlink/tps62293.pdf) (31 pp, sha256 `14a32e7bfa978141`, retrieved 2026-11-05, tier: manufacturer)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/tps62293drvr-datasheet.pdf)