component
TPS62293DRVR
Public Made by Adomby adom
Texas Instruments DC-DC Converters, WSON-6-EP(2x2). Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownTPS62293DRVR
Texas Instruments · DC-DC Converters · WSON-6-EP(2x2)
TPS62293DRVR from Texas Instruments, in a WSON-6-EP(2x2). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | SW | output | Switch pin connected to the internal MOSFET switches; connect the external inductor between this pin and the output capacitor. |
| 2 | MODE | input | A high level forces fixed-frequency PWM mode, and a low level enables power save mode with automatic transition from PFM mode to fixed-frequency PWM mode. |
| 3 | FB | input | Feedback pin for the internal regulation loop; connect the external resistor divider here, or connect it directly to the output capacitor for the fixed output voltage option. |
| 4 | EN | input | Enable pin; pulling it low forces shutdown mode and pulling it high enables the device, and this pin must be terminated. |
| 5 | VIN | power_in | Input voltage supply pin; the recommended supply voltage range is 2.3 V to 6 V. |
| 6 | GND | power_in | Ground supply pin. |
| 7 | EP | passive | Exposed pad (from the footprint; not named in the datasheet pin table). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Texas Instruments |
| Package | WSON-6-EP(2x2) |
| Category | Power Management (PMIC) |
| Pins | 7 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Input voltage | VIN | 2.3 | 6 | V | Supply voltage | 4 | |
| Input voltage range (absolute maximum) | VIN | -0.3 | 7 | V | Input voltage range | 4 | |
| Voltage at SW (absolute maximum) | SW | -0.3 | 7 | V | Voltage at SW | 4 | |
| Voltage range at EN, MODE (absolute maximum) | EN, MODE | -0.3 | 7 | V | VIN +0.3, ≤ 7 V | 4 | |
| Maximum operating junction temperature | TJ | -40 | 125 | °C | 4 | ||
| Storage temperature | Tstg | -65 | 150 | °C | 4 | ||
| Operating ambient temperature | TA | -40 | 85 | °C | 4 | ||
| Operating junction temperature | TJ | -40 | 125 | °C | 4 | ||
| Input voltage supply range | VIN | 2.3 | 6 | V | 5 | ||
| Output current | IOUT | 1000 | mA | VIN 2.7 V to 6 V | 5 | ||
| Output current | IOUT | 600 | mA | VIN 2.5 V to 2.7 V | 5 | ||
| Output current | IOUT | 300 | mA | VIN 2.3 V to 2.5 V | 5 | ||
| Shutdown current | ISD | 0.1 | 1 | μA | EN = GND | 5 | |
| Undervoltage lockout threshold falling | UVLO | 1.85 | V | Falling | 5 | ||
| Undervoltage lockout threshold rising | UVLO | 1.95 | V | Rising | 5 | ||
| High level input voltage EN, MODE | VIH | 1 | V | 2.3 V ≤ VIN ≤ 6 V | 5 | ||
| Low level input voltage EN, MODE | VIL | 0 | 0.4 | V | 2.3 V ≤ VIN ≤ 6 V | 5 | |
| Input bias current EN, MODE | IIN | 0.01 | 1 | μA | EN, MODE = GND or VIN | 5 | |
| High side MOSFET on-resistance | RDS(on) | 240 | 480 | mΩ | VIN = VGS = 3.6 V, TA = 25°C | 5 | |
| Low side MOSFET on-resistance | RDS(on) | 185 | 380 | mΩ | VIN = VGS = 3.6 V | 5 | |
| Forward current limit MOSFET | ILIMF | 1.19 | 1.4 | 1.68 | A | VIN = VGS = 3.6 V | 5 |
| Oscillator frequency | fSW | 2 | 2.25 | 2.5 | MHz | 2.3 V ≤ VIN ≤ 6 V | 5 |
| Feedback voltage PWM mode | VFB(PWM) | -1.5 | 0 | 1.5 | % | MODE = VIN, PWM operation, 2.3 V ≤ VIN ≤ 6 V | 5 |
| Load regulation | -0.5 | %/A | 5 | ||||
| Feedback voltage PFM mode | VFB(PFM) | 1 | % | MODE = GND, device in PFM mode, +1% voltage positioning active | 5 | ||
| Operating quiescent current | IQ | 15 | μA | IOUT = 0 mA, PFM mode enabled (MODE = GND) device not switching | 5 | ||
| Operating quiescent current PWM | IQ | 3.8 | mA | IOUT = 0 mA, switching with no load (MODE = VIN) PWM operation, VOUT = 1.8 V, VIN = 3 V | 5 | ||
| Thermal shutdown | TSD | 140 | °C | Increasing junction temperature | 5 | ||
| Thermal shutdown hysteresis | TSD | 20 | °C | Decreasing junction temperature | 5 | ||
| Start-up time | tStart Up | 500 | μs | Time from active EN to reach 95% of VOUT | 5 | ||
| VOUT ramp-up time | tRamp | 250 | μs | Time to ramp from 5% to 95% of VOUT | 5 | ||
| Leakage current into SW pin | Ilkg | 0.1 | 1 | μA | VIN = 3.6 V, VIN = VOUT = VSW, EN = GND | 5 | |
| Junction-to-ambient thermal resistance | RθJA | 67.8 | °C/W | 4 | |||
| Junction-to-case (top) thermal resistance | RθJC(top) | 88.6 | °C/W | 4 | |||
| Junction-to-board thermal resistance | RθJB | 37.2 | °C/W | 4 | |||
| Junction-to-top characterization parameter | ψJT | 2 | °C/W | 4 | |||
| Junction-to-board characterization parameter | ψJB | 37.6 | °C/W | 4 | |||
| Junction-to-case (bottom) thermal resistance | RθJC(bot) | 7.9 | °C/W | 4 |
CAD (KiCad official)
- Symbol:
TPS62293DRVR - Footprint:
Package_SON:WSON-6-1EP_2x2mm_P0.65mm_EP1x1.6mm - 3D model: WSON-6-EP(2x2) (KiCad packages3D, STEP)
- 3D model files:
tps62293drvr-etched.step/tps62293drvr-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);tps62293drvr.step/tps62293drvr.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Texas Instruments datasheet (31 pp, sha256
14a32e7bfa978141, retrieved 2026-11-05, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).