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TPS62175DQCR

Texas Instruments · DC-DC Converters · WSON-10-EP(2x3)

TPS62175DQCR from Texas Instruments, in a WSON-10-EP(2x3). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 PGND power_in Power ground connection.
2 VIN power_in Supply voltage for the converter, with a recommended operating range of 4.75 V to 28 V.
3 EN input Enable input (High = enabled, Low = disabled).
4 NC unconnected This pin is recommended to be connected to AGND but can be left floating.
5 FB input Voltage feedback of the adjustable version; connect a resistive divider to this pin, and TI recommends connecting FB to AGND for fixed-voltage versions for improved thermal performance.
6 AGND power_in Analog ground connection.
7 PG output Output power good (open drain, requires pullup resistor).
8 SLEEP input Sleep mode input (High = normal operation, Low = sleep mode operation), which can be operated dynamically during operation and should be connected to VOUT if sleep mode is not used.
9 SW output Switch node connected to the internal MOSFET switches; connect the inductor between SW and the output capacitor.
10 VOS input Output voltage sense pin and connection for the control loop circuitry.
11 EP passive Exposed pad (from the footprint; not named in the datasheet pin table).

Key specifications

Parameter Value
Manufacturer Texas Instruments
Package WSON-10-EP(2x3)
Category Power Management (PMIC)
Pins 11

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Input voltage range (absolute max) VIN -0.3 30 V Pin voltage VIN, all voltages with respect to network ground 4
Pin voltage EN, SW -0.3 V EN, SW; max printed as VIN + 0.3 V 4
Pin voltage FB, PG, VOS, SLEEP, NC -0.3 7 V FB, PG, VOS, SLEEP, NC 4
Power good sink current 10 mA PG 4
Operating junction temperature TJ -40 125 °C 4
Storage temperature Tstg -65 150 °C 4
ESD Human body model V(ESD) -2000 2000 V HBM, per ANSI/ESDA/JEDEC JS-001, all pins 4
ESD Charged device model V(ESD) -500 500 V CDM, per JEDEC JESD22-C101, all pins 4
Supply voltage VIN 4.75 28 V 4
Operating free air temperature TA -40 85 °C 4
Operating junction temperature TJ -40 125 °C 4
Input voltage range VIN 4.75 28 V 5
Operating quiescent current IQ 22 36 µA EN = High, SLEEP = High, IOUT = 0 mA, device not switching 5
Sleep mode quiescent current IQ_SLEEP 4.8 10 µA EN = High, SLEEP = Low, IOUT = 0 mA, device not switching 5
Shutdown current ISD 1.5 5 µA EN = Low, current into VIN pin 5
Undervoltage lockout threshold, rising VUVLO 4.5 4.6 4.7 V Rising input voltage 5
High level input threshold voltage (EN, SLEEP) VH 0.9 V 5
Low level input threshold voltage (EN, SLEEP) VL 0.3 V 5
Input leakage current (EN) ILKG_EN 5 300 nA EN = VIN 5
Power good threshold voltage, rising VTH_PG 93 96 99 % Rising (%VOUT) 5
Power good threshold voltage, falling VTH_PG 87 90 93 % Falling (%VOUT) 5
Power good output low voltage VOL_PG 0.3 V IPG = -2 mA 5
Input leakage current (PG) ILKG_PG 5 300 nA VPG = 5 V 5
High-side MOSFET ON-resistance RDS(ON) 850 1430 mΩ VIN ≥ 6 V 5
Low-side MOSFET ON-resistance RDS(ON) 320 530 mΩ VIN ≥ 6 V 5
High-side MOSFET current limit, normal operation ILIMF 800 1000 1200 mA Normal operation 5
High-side MOSFET current limit, start-up mode ILIMF 450 525 600 mA Start-up mode 5
Output voltage range (TPS62175) VOUT 1 6 V VIN ≥ VOUT 5
Input leakage current (FB) ILKG_FB 1 100 nA VFB = 0.8 V 5
Output voltage accuracy, adjustable PWM mode -1.8 1.8 % TPS62175 adjustable PWM mode, VIN ≥ VOUT +1 V 6
Output voltage accuracy, power save mode, VOUT ≥ 2.5 V -1.8 3 % Power save mode, L = 10 µH, COUT = 22 µF, VOUT ≥ 2.5 V 6
Output voltage accuracy, power save mode, VOUT < 2.5 V -1.8 3.7 % Power save mode, L = 10 µH, COUT = 44 µF, VOUT < 2.5 V 6
Output voltage accuracy, sleep mode -1.6 2.9 % Sleep mode, IOUT ≤ 15 mA, COUT = 22 µF, L = 10 µH 6
Junction-to-ambient thermal resistance RθJA 61.6 °C/W DQC [WSON] 10 pins 4
Junction-to-case (top) thermal resistance RθJC(top) 65.5 °C/W DQC [WSON] 10 pins 4
Junction-to-board thermal resistance RθJB 22.5 °C/W DQC [WSON] 10 pins 4
Junction-to-top characterization parameter ψJT 1.4 °C/W DQC [WSON] 10 pins 4
Junction-to-board characterization parameter ψJB 22.4 °C/W DQC [WSON] 10 pins 4
Junction-to-case (bottom) thermal resistance RθJC(bot) 5.3 °C/W DQC [WSON] 10 pins 4

CAD (KiCad official)

  • Symbol: TPS62175DQCR
  • Footprint: Package_SON:WSON-10-1EP_2x3mm_P0.5mm_EP0.84x2.4mm
  • 3D model: WSON-10-EP(2x3) (KiCad packages3D, STEP)
  • 3D model files: tps62175dqcr-etched.step / tps62175dqcr-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); tps62175dqcr.step / tps62175dqcr.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Texas Instruments datasheet (38 pp, sha256 fe8b555aee6d480b, retrieved 2026-11-05, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF