component
TPS610333DRLR
Public Made by Adomby adom
Texas Instruments DC-DC Converters, SOT-583-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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Contents
README
markdownTPS610333DRLR
Texas Instruments · DC-DC Converters · SOT-583-8
TPS610333DRLR from Texas Instruments, in a SOT-583-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | VIN | power_in | IC power supply input for the converter. |
| 2 | EN | input | Enable logic input: a logic-high voltage enables the device, and a logic-low voltage disables it and puts it into shutdown mode. |
| 3 | MODE | input | Light-load operation mode select: tied to logic high selects forced PWM mode, and tied to logic low selects auto PFM mode. |
| 4 | PG | output | Power good indicator, an open-drain output. |
| 5 | FB | input | For TPS610333 this pin should be connected to VIN to set a fixed 5.0 V output voltage. |
| 6 | GND | power_in | Ground pin of the IC. |
| 7 | SW | passive | Switch pin of the converter, connected to the drain of the internal low-side power MOSFET and the source of the internal high-side power MOSFET. |
| 8 | VOUT | power_out | Boost converter output. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Texas Instruments |
| Package | SOT-583-8 |
| Category | Power Management (PMIC) |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Voltage range at terminals VIN, EN, FB, SW, VOUT | -0.3 | 7 | V | Voltage range at terminals VIN, EN, FB, SW, VOUT (w.r.t. network ground) | 5 | ||
| SW spike voltage | -0.7 | 8 | V | SW spike at 10ns | 5 | ||
| SW spike voltage | -0.7 | 9 | V | SW spike at 1ns | 5 | ||
| Operating junction temperature | TJ | -40 | 150 | °C | 5 | ||
| Storage temperature | Tstg | -65 | 150 | °C | 5 | ||
| Input voltage range | VIN | 1.8 | 5.5 | V | 5 | ||
| Output voltage setting range | VOUT | 2.2 | 5.5 | V | 5 | ||
| Effective inductance range | L | 0.33 | 0.47 | 1.3 | µH | 5 | |
| Effective input capacitance range | CIN | 1 | 4.7 | µF | 5 | ||
| Effective output capacitance range | COUT | 4 | 10 | 1000 | µF | IOUT <= 1A | 5 |
| Effective output capacitance range | COUT | 10 | 20 | 1000 | µF | IOUT > 1A | 5 |
| Operating junction temperature | TJ | -40 | 125 | °C | 5 | ||
| Quiescent current into VIN pin | IQ | 13 | 20 | 25 | µA | IC enabled, No load, No switching, VIN = 1.8 V to 5.5 V, VFB = VREF + 0.1 V, TJ up to 125°C | 6 |
| Quiescent current into VOUT pin | IQ | 5.3 | 9 | µA | IC enabled, No load, No switching, VOUT = 2.2 V to 5.5 V, VFB = VREF + 0.1 V, TJ up to 125°C | 6 | |
| Shutdown current into VIN and SW pin | ISD | 0.1 | 0.2 | µA | IC disabled, VIN = VSW = 3.6 V, TJ = 25°C | 6 | |
| Fixed output voltage | VOUT (fixed 5V) | 4.93 | 5 | 5.07 | V | FB connected to VIN, VIN < VOUT, PWM mode | 6 |
| Reference voltage at the FB pin | VREF | 591 | 600 | 609 | mV | PWM mode | 6 |
| Output over-voltage protection threshold | VOVP | 5.5 | 5.75 | 6 | V | VOUT rising | 6 |
| Leakage current at FB pin | IFB_LKG | 4 | 25 | nA | TJ = 25°C | 6 | |
| Leakage current at FB pin | IFB_LKG | 5 | 30 | nA | TJ = 125°C | 6 | |
| Leakage current into VOUT pin | IVOUT_LKG | 0.2 | 0.5 | µA | IC disabled, VIN = 0 V, VSW = 0 V, VOUT = 5.5 V, TJ = 25°C | 6 | |
| Switching frequency | fSW | 2 | 2.4 | 2.8 | MHz | VIN = 3.6 V, VOUT = 5.0 V, PWM mode | 6 |
| Minimum on time | tON_min | 20 | 48 | 65 | ns | 6 | |
| Minimum off time | tOFF_min | 35 | 70 | ns | 6 | ||
| Valley current limit (TPS610333) | ILIM_SW | 1.55 | 1.85 | 2.25 | A | VIN = 3.6 V, VOUT = 5.0 V | 6 |
| Maximum pre-charge current (TPS610333) | ILIM_CHG_max | 800 | 1100 | mA | VIN = 2.4 V, VOUT > 0.4 V | 6 | |
| Power good upper threshold | PGDOV | 105 | 107 | 110 | % | % of VOUT setting | 6 |
| Power good lower threshold | PGDUV | 91 | 93 | 95 | % | % of VOUT setting | 6 |
| Under-voltage lockout threshold | VIN_UVLO | 1.7 | 1.79 | V | VIN rising | 6 | |
| Under-voltage lockout threshold | VIN_UVLO | 1.6 | V | VIN falling | 6 | ||
| VIN UVLO hysteresis | VIN_HYS | 65 | mV | 6 | |||
| Reference voltage at the FB pin | VREF | 606 | mV | PFM mode | 6 | ||
| Output over-voltage protection hysteresis | VOVP_HYS | 0.11 | V | 6 | |||
| Soft startup time | tss | 0.86 | ms | Internal SS ramp time | 6 | ||
| High-side MOSFET on resistance | RDS(on) | 46 | mΩ | VOUT = 5.0 V | 6 | ||
| Low-side MOSFET on resistance | RDS(on) | 25 | mΩ | VOUT = 5.0 V | 6 | ||
| Reverse current limit (MODE=1) | IREVERSE | -1.4 | A | VIN = 3.6 V, VOUT = 5.0 V; MODE = 1 | 6 | ||
| Pre-charge current | ILIM_CHG | 330 | mA | VIN = 1.8 - 5.5 V, VOUT < 0.4 V | 6 | ||
| EN logic high threshold | VEN_H | 1.2 | V | VIN > 1.8 V or VOUT > 2.2 V | 6 | ||
| EN logic low threshold | VEN_L | 0.4 | V | VIN > 1.8 V or VOUT > 2.2 V | 6 | ||
| MODE Logic high threshold | VMODE_H | 1.2 | V | VIN > 1.8 V or VOUT > 2.2 V | 6 | ||
| MODE Logic Low threshold | VMODE_L | 0.4 | V | VIN > 1.8 V or VOUT > 2.2 V | 6 | ||
| EN pins internal pull-down resistor | RDOWN | 10 | MΩ | EN pins | 6 | ||
| MODE pins internal pull-down resistor | RDOWN | 1 | MΩ | MODE pins | 6 | ||
| PGOOD upper threshold hysteresis (rising & falling) | PGDHYST | 2.5 | % | % of VOUT setting | 6 | ||
| Delay time to PGOOD high signal | tPGDFLT(rise) | 1.3 | ms | 6 | |||
| Glitch filter time of PGOOD | tPGDFLT(fall) | 33 | µs | 6 | |||
| Thermal shutdown threshold | TSD | 170 | °C | TJ rising | 6 | ||
| Thermal shutdown threshold | TSD | 155 | °C | TJ falling | 7 | ||
| Thermal shutdown hysteresis | TSD_HYS | 15 | °C | TJ falling below TSD | 7 | ||
| Junction-to-ambient thermal resistance | RθJA | 117.5 | °C/W | First thermal column (standard board, no EVM footnote) | 5 | ||
| Junction-to-ambient thermal resistance | RθJA | 65.8 | °C/W | Measured on TPS61033EVM, 4-layer, 2oz copper NA PCB | 5 | ||
| Junction-to-case thermal resistance | RθJC | 40 | °C/W | First thermal column | 5 | ||
| Junction-to-board thermal resistance | RθJB | 23 | °C/W | First thermal column | 5 | ||
| Junction-to-top characterization parameter | ΨJT | 2.8 | °C/W | First thermal column | 5 | ||
| Junction-to-top characterization parameter | ΨJT | 1 | °C/W | Measured on TPS61033EVM, 4-layer, 2oz copper NA PCB | 5 | ||
| Junction-to-board characterization parameter | ΨJB | 22.9 | °C/W | First thermal column | 5 | ||
| Junction-to-board characterization parameter | ΨJB | 28.4 | °C/W | Measured on TPS61033EVM, 4-layer, 2oz copper NA PCB | 5 |
Materials and finish
As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).
| Part | Material | Colour / plating | Datasheet says | Page |
|---|---|---|---|---|
| contacts | copper | For better thermal performance, TI suggest to make copper polygon connected with each pin bigger. | 20 |
CAD (KiCad official)
- Symbol:
TPS610333DRLR - Footprint:
Package_TO_SOT_SMD:SOT-583-8 - 3D model: SOT-583-8 (KiCad packages3D, STEP)
- 3D model files:
tps610333drlr-etched.step/tps610333drlr-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);tps610333drlr.step/tps610333drlr.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Texas Instruments datasheet (31 pp, sha256
ad649d9686d7262b, retrieved 2026-10-17, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).