TPS57060QDGQRQ1 from Texas Instruments, in a HVSSOP-10-EP-0.5mm. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin	Name	Type	Function
1	BOOT	output	A bootstrap capacitor is required between BOOT and PH; if its voltage falls below the minimum required by the output device, the output is forced to switch off until the capacitor is refreshed.
2	VIN	power_in	Input supply voltage, 3.5 V to 60 V.
3	EN	input	Enable pin with an internal pullup current source; pull below 1.2 V to disable and float to enable, and adjust the input undervoltage lockout with two resistors.
4	SS/TR	input	Slow-start and tracking pin; an external capacitor sets the output rise time, and because this pin overrides the internal reference it can be used for tracking and sequencing.
5	RT/CLK	input	Resistor timing and external clock pin; an external resistor to ground sets the switching frequency, and pulling the pin above the PLL upper threshold converts it to a synchronization input.
6	PWRGD	output	Open-drain output that asserts low if the output voltage is low due to thermal shutdown, dropout, overvoltage or EN shutdown.
7	VSENSE	input	Inverting node of the transconductance (gm) error amplifier.
8	COMP	output	Error amplifier output and input to the output switch current comparator; frequency compensation components connect to this pin.
9	GND	power_in	Ground.
10	PH	output	The source of the internal high-side power MOSFET.
11	PowerPAD	power_in	GND pin must be electrically connected to the exposed pad on the printed circuit board for proper operation.

Key specifications

Parameter	Value
Manufacturer	Texas Instruments
Package	HVSSOP-10-EP-0.5mm
Category	Power Management (PMIC)
Pins	11

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter	Symbol	Min	Typ	Max	Unit	Conditions	Page
PH DC voltage	PH	-0.6		65	V	DC voltage	4
Input voltage	VIN	-0.3		65	V		4
EN voltage	EN	-0.3		5	V		4
BOOT voltage	BOOT			73	V		4
VSENSE voltage	VSENSE	-0.3		3	V		4
COMP voltage	COMP	-0.3		3	V		4
PWRGD voltage	PWRGD	-0.3		6	V		4
SS/TR voltage	SS/TR	-0.3		3	V		4
RT/CLK voltage	RT/CLK	-0.3		3.6	V		4
Operating junction temperature		-40		150	°C		4
VIN supply voltage	VIN	3.5		60	V		4
Effective input capacitance		3			µF		4
Operating ambient temperature	TA	-40		125	°C		4
Operating input voltage	VIN	3.5		60	V		5
Internal undervoltage lockout threshold			2.5		V	No voltage hysteresis, rising and falling	5
Shutdown supply current			1.3	4	μA	EN = 0 V, 25°C, 3.5 V ≤ VIN ≤ 60 V	5
Shutdown supply current			1.9	6.5	μA	EN = 0 V, 125°C, 3.5 V ≤ VIN ≤ 60 V	5
Operating nonswitching supply current			116	136	μA	VSENSE = 0.83 V, VIN = 12 V, 25°C	5
Enable threshold voltage		1.15	1.25	1.36	V	No voltage hysteresis, rising and falling, 25°C	5
Input current at enable threshold +50 mV			-3.8		μA	Enable threshold +50 mV	5
Input current at enable threshold -50 mV			-0.9		μA	Enable threshold -50 mV	5
Hysteresis current			-2.9		μA		5
Voltage reference	Vref	0.792	0.8	0.808	V		5
High-side MOSFET on-resistance			300		mΩ	VIN = 3.5 V, BOOT-PH = 3 V	5
High-side MOSFET on-resistance			200	410	mΩ	VIN = 12 V, BOOT-PH = 6 V	5
Error amplifier input current			50		nA		5
Error amplifier transconductance (gM)	gM		97		μMhos	-2 μA < ICOMP < 2 μA, VCOMP = 1 V	5
Error amplifier transconductance (gM) during slow start	gM		26		μMhos	-2 μA < ICOMP < 2 μA, VCOMP = 1 V, VVSENSE = 0.4 V	5
Error amplifier dc gain			10000		V/V	VVSENSE = 0.8 V	5
Error amplifier bandwidth			2700		kHz		5
Error amplifier source/sink		-7		7	μA	V(COMP) = 1 V, 100 mV overdrive	5
COMP to switch current transconductance			1.9		A/V		5
Current limit threshold		0.6		0.94	A	VIN = 12 V, TJ = 25°C	6
Thermal shutdown			182		°C		6
Switching frequency using RT mode	fSW	100		2500	kHz	VIN = 12 V	6
Switching frequency	fSW	450	581	720	kHz	VIN = 12 V, RT = 200 kΩ	6
Switching frequency using CLK mode	fSW	300		2200	kHz	VIN = 12 V	6
Minimum CLK input pulse width		40			ns		6
RT/CLK high threshold		1.9		2.2	V	VIN = 12 V	6
RT/CLK low threshold		0.45		0.7	V	VIN = 12 V	6
RT/CLK falling edge to PH rising edge delay			60		ns	Measured at 500 kHz with RT resistor in series	6
PLL lock in time			100		μs	Measured at 500 kHz	6
SS/TR charge current			2		μA	VSS/TR = 0.4 V	6
SS/TR-to-VSENSE matching			45		mV	VSS/TR = 0.4 V	6
SS/TR-to-reference crossover			1		V	98% nominal	6
SS/TR discharge current (overload)			112		μA	VSENSE = 0 V, V(SS/TR) = 0.4 V	6
SS/TR discharge voltage			54		mV	VSENSE = 0 V	6
PWRGD threshold, VSENSE falling (fault)	PWRGDTH		92		% of VSENSE	VSENSE falling (fault)	6
PWRGD threshold, VSENSE rising (good)	PWRGDTH		94		% of VSENSE	VSENSE rising (good)	6
PWRGD threshold, VSENSE rising (fault)	PWRGDTH		109		% of VSENSE	VSENSE rising (fault)	6
PWRGD threshold, VSENSE falling (good)	PWRGDTH		107		% of VSENSE	VSENSE falling (good)	6
PWRGD threshold hysteresis			2		% of VSENSE	VSENSE falling and rising	6
PWRGD output high leakage			10		nA	VSENSE = VREF, V(PWRGD) = 5.5 V, 25°C	6
PWRGD on resistance			50		Ω	I(PWRGD) = 3 mA, VSENSE < 0.79 V	6
Minimum VIN for defined PWRGD output		0.95		1.5	V	V(PWRGD) < 0.5 V, II(PWRGD) = 100 μA	6
Junction-to-ambient thermal resistance (DGQ)	RθJA		67.4		°C/W		5
Junction-to-case (top) thermal resistance (DGQ)	RθJC(top)		46.7		°C/W		5
Junction-to-board thermal resistance (DGQ)	RθJB		38.4		°C/W		5
Junction-to-top characterization parameter (DGQ)	ψJT		1.9		°C/W		5
Junction-to-board characterization parameter (DGQ)	ψJB		38.1		°C/W		5
Junction-to-case (bottom) thermal resistance (DGQ)	RθJC(bot)		15.9		°C/W		5

CAD (KiCad official)

Symbol: TPS57060QDGQRQ1
Footprint: Package_SO:MSOP-10-1EP_3x3mm_P0.5mm_EP1.68x1.88mm
3D model: HVSSOP-10-EP-0.5mm (KiCad packages3D, STEP)
3D model files: tps57060qdgqrq1-etched.step / tps57060qdgqrq1-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); tps57060qdgqrq1.step / tps57060qdgqrq1.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

Datasheet: Texas Instruments datasheet (52 pp, sha256 5d7ad0bfe001428e, retrieved 2026-11-05, tier: manufacturer)
Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
CAD: KiCad official libraries (CC-BY-SA 4.0).

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TPS57060QDGQRQ1

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3D Model

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