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TPS566242DRLR
Public Made by Adomby adom
Texas Instruments DC-DC Converters, SOT-563. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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tps566242drlr: specified limits as data (metadata.characteristics, 51 rows from the datasheet)
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TPS566242DRLR
Texas Instruments · DC-DC Converters · SOT-563
TPS566242DRLR from Texas Instruments, in a SOT-563. Pinout and pin descriptions extracted from the manufacturer datasheet by ds2sf; symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | VIN | power_in | Input voltage supply pin operating in the 3 V to 16 V range. |
| 2 | SW | output | Switch node connecting high-side and low-side MOSFETs; operating voltage range −1 V to 16 V. |
| 3 | GND | power_in | Ground reference for power stage and control circuits; source terminal of low-side MOSFET. |
| 4 | AGND | power_in | Analog ground of internal circuitry that must be connected to the GND plane. |
| 5 | EN | input | Enable input to converter with 1.18 V typical threshold voltage for enabling operation. |
| 6 | FB | input | Feedback input for output voltage regulation accepting −0.1 V to 5.5 V with 600 mV reference voltage. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Texas Instruments |
| Package | SOT-563 |
| Category | Power Management (PMIC) |
| Pins | 6 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Input voltage range | VIN | 3 | 16 | V | 5 | ||
| UVLO VIN undervoltage lockout Wake-up VIN voltage | UVLO | 2.75 | 2.92 | 3 | V | 5 | |
| UVLO VIN undervoltage lockout Shutdown VIN voltage | UVLO | 2.6 | 2.72 | 2.9 | V | 5 | |
| FB voltage | VREF | 594 | 600 | 606 | mV | TJ = 25°C | 5 |
| FB voltage | VREF | 591 | 600 | 609 | mV | TJ = –40°C to 125°C | 5 |
| EN threshold high level | VEN(ON) | 1.07 | 1.18 | 1.33 | V | 5 | |
| EN threshold low level | VEN(OFF) | 0.95 | 1 | 1.2 | V | 5 | |
| OVP trip threshold | VOVP | 115 | 120 | 125 | % | 5 | |
| UVP trip threshold | VUVP | 55 | 60 | 65 | % | 5 | |
| Overcurrent threshold | IOCL_LS | 6 | 7.4 | 9 | A | Valley current setpoint | 5 |
| Negative overcurrent threshold | INOCL | 2 | 3.4 | 4.2 | A | 5 | |
| Input voltage VIN | VIN | -0.3 | 18 | V | 4 | ||
| Input voltage FB, EN | FB, EN | -0.3 | 6 | V | 4 | ||
| Input voltage AGND, PGND | AGND, PGND | -0.3 | 0.3 | V | 4 | ||
| Output voltage SW | SW | -2 | 18 | V | 4 | ||
| Output voltage SW (< 20 ns) | SW | -6.5 | 20 | V | 4 | ||
| Operating junction temperature range | TJ | -40 | 150 | °C | 4 | ||
| Storage temperature | Tstg | -55 | 150 | °C | 4 | ||
| Input voltage VIN | VIN | 3 | 16 | V | 4 | ||
| Input voltage FB, EN | FB, EN | -0.1 | 5.5 | V | 4 | ||
| Input voltage AGND, PGND | AGND, PGND | -0.1 | 0.1 | V | 4 | ||
| Output voltage SW | SW | -1 | 16 | V | 4 | ||
| Output voltage SW (< 20 ns) | SW | -6 | 18 | V | 4 | ||
| Output current | IO | 0 | 6 | A | 4 | ||
| Operating junction temperature | TJ | -40 | 125 | °C | 4 | ||
| Storage temperature | Tstg | -40 | 150 | °C | 4 | ||
| VIN supply current, ECO version | IVIN | 120 | µA | No load, VEN = 5 V, VFB = 0.65 V, non-switching, ECO version | 5 | ||
| VIN shutdown current | IINSDN | 2 | µA | No load, VEN = 0 V | 5 | ||
| UVLO VIN undervoltage lockout Hysteresis VIN voltage | UVLO | 200 | mV | 5 | |||
| High-side MOSFET RDS(ON) | RDS(ON)HI | 27.7 | mΩ | TJ = 25°C, VVIN ≥ 5 V | 5 | ||
| High-side MOSFET RDS(ON) | RDS(ON)HI | 29.6 | mΩ | TJ = 25°C, VVIN = 3 V | 5 | ||
| Low-side MOSFET RDS(ON) | RDS(ON)LO | 14.8 | mΩ | TJ = 25°C, VVIN ≥ 5 V | 5 | ||
| Low-side MOSFET RDS(ON) | RDS(ON)LO | 15.8 | mΩ | TJ = 25°C, VVIN = 3 V | 5 | ||
| Switching frequency | FSW | 600 | kHz | TJ = 25°C, VVOUT = 3.3 V | 5 | ||
| Minimum on time | TON(MIN) | 50 | ns | TJ = 25°C | 5 | ||
| Minimum off time | TOFF(MIN) | 100 | ns | VFB = 0.5 V | 5 | ||
| EN hysteresis | VENHYS | 180 | mV | 5 | |||
| EN pulldown resistor | REN1 | 2 | MΩ | 5 | |||
| Internal soft-start time | tSS | 1.39 | ms | 5 | |||
| OVP prop deglitch | tOVPDLY | 24 | µs | TJ = 25°C | 5 | ||
| UVP prop deglitch | tUVPDLY | 256 | µs | 5 | |||
| Output hiccup delay relative to SS time UVP detect | tUVPDEL | 256 | µs | 5 | |||
| Output hiccup enable delay relative to SS time UVP detect | tUVPEN | 13 | ms | 5 | |||
| OTP trip threshold | TOTP | 155 | °C | 5 | |||
| OTP hysteresis | TOTPHSY | 20 | °C | 6 | |||
| Junction-to-ambient thermal resistance | RθJA | 131.1 | °C/W | 4 | |||
| Junction-to-ambient thermal resistance on EVM board | RθJA_effective | 51 | °C/W | Tested on TPS566242EVM board, VIN = 12 V, VOUT = 5 V, IOUT = 6 A, TA = 25°C | 4 | ||
| Junction-to-case (top) thermal resistance | RθJC(top) | 45.6 | °C/W | 4 | |||
| Junction-to-board thermal resistance | RθJB | 16.4 | °C/W | 4 | |||
| Junction-to-top characterization parameter | ΨJT | 0.8 | °C/W | 4 | |||
| Junction-to-board characterization parameter | YJB | 16.1 | °C/W | 4 |
CAD (KiCad official)
- Symbol:
TPS566242DRLR - Footprint:
Package_TO_SOT_SMD:SOT-563 - 3D model: SOT-563 (KiCad packages3D, STEP)
- 3D model files:
tps566242drlr-etched.step/tps566242drlr-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);tps566242drlr.step/tps566242drlr.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Texas Instruments datasheet (30 pp, sha256
b31131c5f1ee2986, retrieved 2026-09-22, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.2, primaryclaude-haiku-4-5-20251001(text), consensusclaude-sonnet-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# TPS566242DRLR
**Texas Instruments** · DC-DC Converters · SOT-563
TPS566242DRLR from Texas Instruments, in a SOT-563. Pinout and pin descriptions extracted from the manufacturer datasheet by ds2sf; symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | VIN | power_in | Input voltage supply pin operating in the 3 V to 16 V range. |
| 2 | SW | output | Switch node connecting high-side and low-side MOSFETs; operating voltage range −1 V to 16 V. |
| 3 | GND | power_in | Ground reference for power stage and control circuits; source terminal of low-side MOSFET. |
| 4 | AGND | power_in | Analog ground of internal circuitry that must be connected to the GND plane. |
| 5 | EN | input | Enable input to converter with 1.18 V typical threshold voltage for enabling operation. |
| 6 | FB | input | Feedback input for output voltage regulation accepting −0.1 V to 5.5 V with 600 mV reference voltage. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Texas Instruments |
| Package | SOT-563 |
| Category | Power Management (PMIC) |
| Pins | 6 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Input voltage range | VIN | 3 | | 16 | V | | 5 |
| UVLO VIN undervoltage lockout Wake-up VIN voltage | UVLO | 2.75 | 2.92 | 3 | V | | 5 |
| UVLO VIN undervoltage lockout Shutdown VIN voltage | UVLO | 2.6 | 2.72 | 2.9 | V | | 5 |
| FB voltage | VREF | 594 | 600 | 606 | mV | TJ = 25°C | 5 |
| FB voltage | VREF | 591 | 600 | 609 | mV | TJ = –40°C to 125°C | 5 |
| EN threshold high level | VEN(ON) | 1.07 | 1.18 | 1.33 | V | | 5 |
| EN threshold low level | VEN(OFF) | 0.95 | 1 | 1.2 | V | | 5 |
| OVP trip threshold | VOVP | 115 | 120 | 125 | % | | 5 |
| UVP trip threshold | VUVP | 55 | 60 | 65 | % | | 5 |
| Overcurrent threshold | IOCL_LS | 6 | 7.4 | 9 | A | Valley current setpoint | 5 |
| Negative overcurrent threshold | INOCL | 2 | 3.4 | 4.2 | A | | 5 |
| Input voltage VIN | VIN | -0.3 | | 18 | V | | 4 |
| Input voltage FB, EN | FB, EN | -0.3 | | 6 | V | | 4 |
| Input voltage AGND, PGND | AGND, PGND | -0.3 | | 0.3 | V | | 4 |
| Output voltage SW | SW | -2 | | 18 | V | | 4 |
| Output voltage SW (< 20 ns) | SW | -6.5 | | 20 | V | | 4 |
| Operating junction temperature range | TJ | -40 | | 150 | °C | | 4 |
| Storage temperature | Tstg | -55 | | 150 | °C | | 4 |
| Input voltage VIN | VIN | 3 | | 16 | V | | 4 |
| Input voltage FB, EN | FB, EN | -0.1 | | 5.5 | V | | 4 |
| Input voltage AGND, PGND | AGND, PGND | -0.1 | | 0.1 | V | | 4 |
| Output voltage SW | SW | -1 | | 16 | V | | 4 |
| Output voltage SW (< 20 ns) | SW | -6 | | 18 | V | | 4 |
| Output current | IO | 0 | | 6 | A | | 4 |
| Operating junction temperature | TJ | -40 | | 125 | °C | | 4 |
| Storage temperature | Tstg | -40 | | 150 | °C | | 4 |
| VIN supply current, ECO version | IVIN | | 120 | | µA | No load, VEN = 5 V, VFB = 0.65 V, non-switching, ECO version | 5 |
| VIN shutdown current | IINSDN | | 2 | | µA | No load, VEN = 0 V | 5 |
| UVLO VIN undervoltage lockout Hysteresis VIN voltage | UVLO | | 200 | | mV | | 5 |
| High-side MOSFET RDS(ON) | RDS(ON)HI | | 27.7 | | mΩ | TJ = 25°C, VVIN ≥ 5 V | 5 |
| High-side MOSFET RDS(ON) | RDS(ON)HI | | 29.6 | | mΩ | TJ = 25°C, VVIN = 3 V | 5 |
| Low-side MOSFET RDS(ON) | RDS(ON)LO | | 14.8 | | mΩ | TJ = 25°C, VVIN ≥ 5 V | 5 |
| Low-side MOSFET RDS(ON) | RDS(ON)LO | | 15.8 | | mΩ | TJ = 25°C, VVIN = 3 V | 5 |
| Switching frequency | FSW | | 600 | | kHz | TJ = 25°C, VVOUT = 3.3 V | 5 |
| Minimum on time | TON(MIN) | | 50 | | ns | TJ = 25°C | 5 |
| Minimum off time | TOFF(MIN) | | 100 | | ns | VFB = 0.5 V | 5 |
| EN hysteresis | VENHYS | | 180 | | mV | | 5 |
| EN pulldown resistor | REN1 | | 2 | | MΩ | | 5 |
| Internal soft-start time | tSS | | 1.39 | | ms | | 5 |
| OVP prop deglitch | tOVPDLY | | 24 | | µs | TJ = 25°C | 5 |
| UVP prop deglitch | tUVPDLY | | 256 | | µs | | 5 |
| Output hiccup delay relative to SS time UVP detect | tUVPDEL | | 256 | | µs | | 5 |
| Output hiccup enable delay relative to SS time UVP detect | tUVPEN | | 13 | | ms | | 5 |
| OTP trip threshold | TOTP | | 155 | | °C | | 5 |
| OTP hysteresis | TOTPHSY | | 20 | | °C | | 6 |
| Junction-to-ambient thermal resistance | RθJA | | 131.1 | | °C/W | | 4 |
| Junction-to-ambient thermal resistance on EVM board | RθJA_effective | | 51 | | °C/W | Tested on TPS566242EVM board, VIN = 12 V, VOUT = 5 V, IOUT = 6 A, TA = 25°C | 4 |
| Junction-to-case (top) thermal resistance | RθJC(top) | | 45.6 | | °C/W | | 4 |
| Junction-to-board thermal resistance | RθJB | | 16.4 | | °C/W | | 4 |
| Junction-to-top characterization parameter | ΨJT | | 0.8 | | °C/W | | 4 |
| Junction-to-board characterization parameter | YJB | | 16.1 | | °C/W | | 4 |
## CAD (KiCad official)
- Symbol: `TPS566242DRLR`
- Footprint: `Package_TO_SOT_SMD:SOT-563`
- 3D model: SOT-563 (KiCad packages3D, STEP)
- 3D model files: `tps566242drlr-etched.step` / `tps566242drlr-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `tps566242drlr.step` / `tps566242drlr.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Texas Instruments datasheet](https://www.ti.com/lit/ds/symlink/tps566242.pdf) (30 pp, sha256 `b31131c5f1ee2986`, retrieved 2026-09-22, tier: manufacturer)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.2`, primary `claude-haiku-4-5-20251001` (text), consensus `claude-sonnet-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/tps566242drlr-datasheet.pdf)