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TPS563210ADDFT

Public Made by Adom

by adom

Texas Instruments DC-DC Converters, TSOT-23-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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TPS563210ADDFT

Texas Instruments · DC-DC Converters · TSOT-23-8

TPS563210ADDFT from Texas Instruments, in a TSOT-23-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 GND power_in Ground pin, source terminal of the low-side power NFET and ground terminal for the controller circuit; connect sensitive VFB to this GND at a single point.
2 SW passive Switch node connection between the high-side NFET and low-side NFET (absolute max -2 V to 19 V).
3 VIN power_in Input voltage supply pin and drain terminal of the high-side power NFET; recommended range 4.5 V to 17 V.
4 PG output Power good open-drain output.
5 SS passive Soft-start control pin; an external capacitor should be connected to GND.
6 VFB input Converter feedback input; connect to the output voltage with a feedback resistor divider.
7 EN input Enable input control, active high, and must be pulled up to enable the device.
8 VBST power_in Supply input for the high-side NFET gate drive circuit; connect a 0.1 µF capacitor between VBST and SW pins.

Key specifications

Parameter Value
Manufacturer Texas Instruments
Package TSOT-23-8
Category Power Supply Chip
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Operating non-switching supply current IVIN 190 290 µA VIN current, TA = 25°C, EN = 5V, VFB = 0.8 V 5
Shutdown supply current IVINSDN 3 10 µA VIN current, TA = 25°C, EN = 0 V 5
EN high-level input voltage VENH 1.6 V EN 5
EN low-level input voltage VENL 0.6 V EN 5
EN pin resistance to GND REN 225 450 900 kΩ VEN = 12 V 5
VFB threshold voltage VFBTH 758 765 772 mV TA = 25°C, VO = 1.05 V 5
VFB threshold voltage VFBTH 753 777 mV TA = 0°C to 85°C, VO = 1.05 V (not production tested) 5
VFB threshold voltage VFBTH 751 779 mV TA = -40°C to 85°C, VO = 1.05 V (not production tested) 5
VFB input current IVFB 0 0.1 µA VFB = 0.8 V, TA = 25°C 5
High side switch resistance RDS(on)h 68 mΩ TA = 25°C, VBST, SW = 5.5 V, TPS563210A 5
Low side switch resistance RDS(on)l 39 mΩ TA = 25°C, TPS563210A 5
Current limit IOCL 3.5 4.2 5.3 A DC current, VOUT = 1.05 V, L1 = 1.5 µH, TPS563210A 5
SS charge current ISS 4.2 6 7.8 µA VSS = 1.2 V 5
PG threshold rising VTHPG 85 90 95 % VFB rising (Good) 5
PG sink current IPG 0.5 1 mA PG = 0.5 V 5
UVLO wake up threshold UVLO 3.45 3.75 4.05 V Wake up VIN voltage 5
UVLO hysteresis UVLO 0.13 0.32 0.55 V Hysteresis VIN voltage 5
Minimum off time tOFF(MIN) 260 310 ns TA = 25°C, VFB = 0.5 V 5
On time tON 150 ns VIN = 12 V, VO = 1.05 V 5
Thermal shutdown threshold TSDN 155 °C Shutdown temperature 5
Thermal shutdown hysteresis TSDN 35 °C Hysteresis 5
Supply input voltage range VIN 4.5 17 V TJ = -40°C to 150°C 4
VBST input voltage VBST -0.1 23 V 4
VBST (vs SW) input voltage VBST(vs SW) -0.1 6 V 4
EN input voltage EN -0.1 17 V 4
VFB, PG input voltage VFB, PG -0.1 5.5 V 4
SS input voltage SS -0.1 5 V 4
SW input voltage SW -1.8 17 V 4
Operating free-air temperature TA -40 85 °C 4
VIN, EN input voltage VIN, EN -0.3 19 V TJ = -40°C to 150°C 4
VBST voltage VBST -0.3 25 V 4
VBST (10 ns transient) VBST -0.3 27.5 V 10 ns transient 4
VBST (vs SW) VBST -0.3 6.5 V vs SW 4
VFB, PG voltage VFB, PG -0.3 6.5 V 4
SS voltage SS -0.3 5.5 V 4
SW voltage SW -2 19 V 4
SW (10 ns transient) SW -3.5 21 V 10 ns transient 4
Operating junction temperature TJ -40 150 °C 4
Storage temperature Tstg -55 150 °C 4
ESD HBM V(ESD) -2000 2000 V Human body model, ANSI/ESDA/JEDEC JS-001 4
ESD CDM V(ESD) -500 500 V Charged device model, JESD22-C101 4
Junction-to-ambient thermal resistance RθJA 87 °C/W DDF (8 pins) 4
Junction-to-case (top) thermal resistance RθJC(top) 41.6 °C/W DDF (8 pins) 4
Junction-to-board thermal resistance RθJB 14.6 °C/W DDF (8 pins) 4
Junction-to-top characterization parameter ψJT 4.7 °C/W DDF (8 pins) 4
Junction-to-board characterization parameter ψJB 14.6 °C/W DDF (8 pins) 4

CAD (KiCad official)

  • Symbol: TPS563210ADDFT
  • Footprint: Package_TO_SOT_SMD:TSOT-23-8
  • 3D model: TSOT-23-8 (KiCad packages3D, STEP)
  • 3D model files: tps563210addft-etched.step / tps563210addft-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); tps563210addft.step / tps563210addft.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Texas Instruments datasheet (29 pp, sha256 93ccf335d18255b9, retrieved 2026-10-23, tier: lcsc)
  • Datasheet language: Chinese. Pin names, descriptions, and specs on this page were extracted and translated to English by ds2sf; the linked PDF is the manufacturer original.
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF