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TPS563210ADDFT

Texas Instruments · DC-DC Converters · TSOT-23-8

TPS563210ADDFT from Texas Instruments, in a TSOT-23-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin	Name	Type	Function
1	GND	power_in	Ground pin, source terminal of the low-side power NFET and ground terminal for the controller circuit; connect sensitive VFB to this GND at a single point.
2	SW	passive	Switch node connection between the high-side NFET and low-side NFET (absolute max -2 V to 19 V).
3	VIN	power_in	Input voltage supply pin and drain terminal of the high-side power NFET; recommended range 4.5 V to 17 V.
4	PG	output	Power good open-drain output.
5	SS	passive	Soft-start control pin; an external capacitor should be connected to GND.
6	VFB	input	Converter feedback input; connect to the output voltage with a feedback resistor divider.
7	EN	input	Enable input control, active high, and must be pulled up to enable the device.
8	VBST	power_in	Supply input for the high-side NFET gate drive circuit; connect a 0.1 µF capacitor between VBST and SW pins.

Key specifications

Parameter	Value
Manufacturer	Texas Instruments
Package	TSOT-23-8
Category	Power Supply Chip
Pins	8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter	Symbol	Min	Typ	Max	Unit	Conditions	Page
Operating non-switching supply current	IVIN		190	290	µA	VIN current, TA = 25°C, EN = 5V, VFB = 0.8 V	5
Shutdown supply current	IVINSDN		3	10	µA	VIN current, TA = 25°C, EN = 0 V	5
EN high-level input voltage	VENH			1.6	V	EN	5
EN low-level input voltage	VENL	0.6			V	EN	5
EN pin resistance to GND	REN	225	450	900	kΩ	VEN = 12 V	5
VFB threshold voltage	VFBTH	758	765	772	mV	TA = 25°C, VO = 1.05 V	5
VFB threshold voltage	VFBTH	753		777	mV	TA = 0°C to 85°C, VO = 1.05 V (not production tested)	5
VFB threshold voltage	VFBTH	751		779	mV	TA = -40°C to 85°C, VO = 1.05 V (not production tested)	5
VFB input current	IVFB		0	0.1	µA	VFB = 0.8 V, TA = 25°C	5
High side switch resistance	RDS(on)h		68		mΩ	TA = 25°C, VBST, SW = 5.5 V, TPS563210A	5
Low side switch resistance	RDS(on)l		39		mΩ	TA = 25°C, TPS563210A	5
Current limit	IOCL	3.5	4.2	5.3	A	DC current, VOUT = 1.05 V, L1 = 1.5 µH, TPS563210A	5
SS charge current	ISS	4.2	6	7.8	µA	VSS = 1.2 V	5
PG threshold rising	VTHPG	85	90	95	%	VFB rising (Good)	5
PG sink current	IPG	0.5	1		mA	PG = 0.5 V	5
UVLO wake up threshold	UVLO	3.45	3.75	4.05	V	Wake up VIN voltage	5
UVLO hysteresis	UVLO	0.13	0.32	0.55	V	Hysteresis VIN voltage	5
Minimum off time	tOFF(MIN)		260	310	ns	TA = 25°C, VFB = 0.5 V	5
On time	tON		150		ns	VIN = 12 V, VO = 1.05 V	5
Thermal shutdown threshold	TSDN		155		°C	Shutdown temperature	5
Thermal shutdown hysteresis	TSDN		35		°C	Hysteresis	5
Supply input voltage range	VIN	4.5		17	V	TJ = -40°C to 150°C	4
VBST input voltage	VBST	-0.1		23	V		4
VBST (vs SW) input voltage	VBST(vs SW)	-0.1		6	V		4
EN input voltage	EN	-0.1		17	V		4
VFB, PG input voltage	VFB, PG	-0.1		5.5	V		4
SS input voltage	SS	-0.1		5	V		4
SW input voltage	SW	-1.8		17	V		4
Operating free-air temperature	TA	-40		85	°C		4
VIN, EN input voltage	VIN, EN	-0.3		19	V	TJ = -40°C to 150°C	4
VBST voltage	VBST	-0.3		25	V		4
VBST (10 ns transient)	VBST	-0.3		27.5	V	10 ns transient	4
VBST (vs SW)	VBST	-0.3		6.5	V	vs SW	4
VFB, PG voltage	VFB, PG	-0.3		6.5	V		4
SS voltage	SS	-0.3		5.5	V		4
SW voltage	SW	-2		19	V		4
SW (10 ns transient)	SW	-3.5		21	V	10 ns transient	4
Operating junction temperature	TJ	-40		150	°C		4
Storage temperature	Tstg	-55		150	°C		4
ESD HBM	V(ESD)	-2000		2000	V	Human body model, ANSI/ESDA/JEDEC JS-001	4
ESD CDM	V(ESD)	-500		500	V	Charged device model, JESD22-C101	4
Junction-to-ambient thermal resistance	RθJA		87		°C/W	DDF (8 pins)	4
Junction-to-case (top) thermal resistance	RθJC(top)		41.6		°C/W	DDF (8 pins)	4
Junction-to-board thermal resistance	RθJB		14.6		°C/W	DDF (8 pins)	4
Junction-to-top characterization parameter	ψJT		4.7		°C/W	DDF (8 pins)	4
Junction-to-board characterization parameter	ψJB		14.6		°C/W	DDF (8 pins)	4

CAD (KiCad official)

Symbol: TPS563210ADDFT
Footprint: Package_TO_SOT_SMD:TSOT-23-8
3D model: TSOT-23-8 (KiCad packages3D, STEP)
3D model files: tps563210addft-etched.step / tps563210addft-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); tps563210addft.step / tps563210addft.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

Datasheet: Texas Instruments datasheet (29 pp, sha256 93ccf335d18255b9, retrieved 2026-10-23, tier: lcsc)
Datasheet language: Chinese. Pin names, descriptions, and specs on this page were extracted and translated to English by ds2sf; the linked PDF is the manufacturer original.
Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF