component
TPS562200DDCR
Public Made by Adomby adom
Texas Instruments DC-DC Converters, SOT-23-6. Pinout extracted from the datasheet, KiCad symbol/footprint/3D.
main
Ray
Brief states the pinout check that actually ran (was an unconditional "Datasheet-verified pinout")
9642afa
10d ago
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"type": "component",
"slug": "tps562200ddcr",
"title": "TPS562200DDCR",
"brief": "Texas Instruments DC-DC Converters, SOT-23-6. Pinout extracted from the datasheet, KiCad symbol/footprint/3D.",
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"component": {
"mpn": "TPS562200DDCR",
"manufacturer": "Texas Instruments",
"package": "SOT-23-6",
"pin_count": 6,
"category": "PMIC",
"subcategory": "DC-DC Converters",
"datasheet": "https://www.ti.com/lit/ds/symlink/tps562200ddcr.pdf",
"parts": {
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"footprint": "tps562200ddcr.kicad_mod",
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"distributor_links": {
"digikey": "296-39631-2-ND",
"lcsc": "C49757"
},
"pins": [
{
"number": "1",
"name": "GND",
"type": "power_in",
"description": "Ground pin. Source terminal of the low-side power NFET and the ground return for the internal controller circuit. Connect the sensitive VFB divider ground to this pin at a single point (Kelvin) to avoid switching-current offset errors."
},
{
"number": "2",
"name": "SW",
"type": "power_out",
"description": "Switch node connection between the internal high-side and low-side NFETs. Connect to the output inductor. Absolute maximum -2 V to 19 V (-3.5 V to 21 V for 10 ns transients)."
},
{
"number": "3",
"name": "VIN",
"type": "power_in",
"description": "Input voltage supply pin and drain of the high-side power NFET. Operating range 4.5 V to 17 V; absolute maximum 19 V. Bypass to GND with a low-ESR ceramic input capacitor placed close to the pin."
},
{
"number": "4",
"name": "VFB",
"type": "input",
"description": "Converter feedback input to the internal 0.765 V (typ) reference comparator. Connect to the output through a resistor divider to set the regulated output voltage (0.76 V to 7 V). Input current is essentially 0 (±0.1 µA max)."
},
{
"number": "5",
"name": "EN",
"type": "input",
"description": "Enable input, active high. VIH >= 1.6 V enables the converter; VIL <= 0.6 V disables it. Has an internal ~450 kΩ pull-down to GND (225-900 kΩ). Must be pulled high to enable the device; do not leave floating."
},
{
"number": "6",
"name": "VBST",
"type": "power_in",
"description": "Bootstrap supply input for the high-side NFET gate drive. Connect a 0.1 µF ceramic capacitor between VBST and SW. Absolute maximum 25 V to GND and 6.5 V with respect to SW."
}
],
"provenance": {
"extractor": "ds2sf",
"datasheet": {
"url": "https://www.ti.com/lit/ds/symlink/tps562200ddcr.pdf",
"pages": 28,
"sha256": "5cdbb6cdb9b351a8",
"source_tier": "mfr"
},
"cad": "KiCad official (CC-BY-SA 4.0)",
"pins": {
"total": 6,
"described": 6,
"cites_pages": true,
"refuses_to_fabricate": true
}
},
"viewers": {
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},
"pin1": {
"pad": "1",
"at": [
-1.1375,
-0.95
],
"corner": "top-left",
"source": "silk-marker",
"derived_from": "SOT-23-6@sha256:f341c73aac9dcb55",
"mark": "drawn"
}
},
"metadata": {
"specs": {
"Manufacturer": "Texas Instruments",
"Package": "SOT-23-6",
"Category": "PMIC",
"Pins": "6"
}
},
"sections": [
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"viewers",
"readme",
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"discovery_triggers": [
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"discovery_pitch": "TPS562200DDCR (Texas Instruments) component page with datasheet-verified CAD.",
"author": {
"name": "Ray",
"email": "[email protected]"
},
"dependencies": {},
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"path": "docs/hero.png"
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"files": [
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"visibility": {
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"variants": [
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"mpn": "TPS562200DDCRDDCT",
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],
"updated_at": "2026-09-25T12:14:28.465Z"
}