# TPS561243DRLR

**TI(德州仪器)** · Global Sourcing Parts · SOT-563

TPS561243DRLR from TI(德州仪器), in a SOT-563. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | VIN | power_in | Input voltage supply pin, operating range 4.2 V to 17 V with an absolute maximum of 19 V. |
| 2 | SW | output | Switch node connecting the high-side and low-side NFETs; recommended range is -1 V to 17 V (-6 V to 19 V for under 20 ns). |
| 3 | GND | power_in | Source terminal of the low-side power NFET and ground for the control circuitry; the sensitive FB network should connect to this GND at a single point. |
| 4 | BST | power_in | Supply input for the high-side NFET gate-drive circuit; a 0.1 µF capacitor must be connected between BST and SW, with a recommended range of -0.1 V to 23 V. |
| 5 | EN | input | Active-high enable input that must be pulled up to enable the device; the recommended maximum is 5.5 V, with a high threshold of 1.15 V to 1.28 V and a low threshold of 0.93 V to 1.05 V. |
| 6 | FB | input | Converter feedback input connected to the output through a resistor divider, referenced to 0.6 V, with a recommended range of -0.1 V to 5.5 V. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | TI(德州仪器) |
| Package | SOT-563 |
| Category | Global Sourcing Parts |
| Pins | 6 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| 输入电压 VIN (absolute maximum) | VIN | -0.3 |  | 19 | V |  | 4 |
| 输入电压 FB、EN (absolute maximum) |  | -0.3 |  | 6 | V |  | 4 |
| 输入电压 GND (absolute maximum) |  | -0.3 |  | 0.3 | V |  | 4 |
| 输出电压 BST (absolute maximum) |  | -0.3 |  | 25 | V |  | 4 |
| 输出电压 BST (absolute maximum) |  | -0.3 |  | 27 | V | < 20ns | 4 |
| 输出电压 SW (absolute maximum) |  | -2 |  | 19 | V |  | 4 |
| 输出电压 SW (absolute maximum) |  | -6.5 |  | 21 | V | < 20ns | 4 |
| 工作结温范围 TJ (absolute maximum) | TJ | -40 |  | 150 | °C |  | 4 |
| 贮存温度 Tstg (absolute maximum) | Tstg | -55 |  | 150 | °C |  | 4 |
| ESD 人体放电模型 HBM | V(ESD) | -2000 |  | 2000 | V | Human body model, ANSI/ESDA/JEDEC JS-001 | 4 |
| ESD 充电器件模型 CDM | V(ESD) | -500 |  | 500 | V | Charged device model, ANSI/ESDA/JEDEC JS-002 | 4 |
| 输入电压 VIN (recommended operating) | VIN | 4.2 |  | 17 | V |  | 4 |
| 输入电压 FB、EN (recommended operating) |  | -0.1 |  | 5.5 | V |  | 4 |
| 输入电压 GND (recommended operating) |  | -0.1 |  | 0.1 | V |  | 4 |
| 输出电压 BST (recommended operating) |  | -0.1 |  | 23 | V |  | 4 |
| 输出电压 BST (recommended operating) |  | -0.1 |  | 25 | V | < 20ns | 4 |
| 输出电压 SW (recommended operating) |  | -1 |  | 17 | V |  | 4 |
| 输出电压 SW (recommended operating) |  | -6 |  | 19 | V | < 20ns | 4 |
| 输出电流 IO | IO | 0 |  | 1 | A |  | 4 |
| 工作结温 TJ (recommended operating) | TJ | -40 |  | 125 | °C |  | 4 |
| 贮存温度 Tstg (recommended operating) | Tstg | -40 |  | 150 | °C |  | 4 |
| 输入电压范围 VIN | VIN | 4.2 |  | 17 | V |  | 5 |
| UVLO VIN 唤醒电压 |  | 3.6 | 3.8 | 4 | V |  | 5 |
| UVLO VIN 关断电压 |  | 3.2 | 3.4 | 3.6 | V |  | 5 |
| FB 电压 (25°C) | VFB | 591 | 600 | 609 | mV | TJ = 25°C, Vin = 4.2V - 17V | 5 |
| FB 电压 (全温度范围) | VFB | 588 | 600 | 612 | mV | TJ = -40°C 至 125°C, Vin = 4.2V - 17V | 5 |
| 过流阈值 谷值电流设定点 | IOCL_LS | 1.2 | 2.8 | 3.6 | A | 谷值电流设定点 | 5 |
| 负过流阈值 谷值电流设定点 | INOCL | 1 | 1.8 | 2.5 | A | 谷值电流设定点 | 5 |
| EN 阈值高电平 | VEN(ON) | 1.15 | 1.2 | 1.28 | V |  | 5 |
| EN 阈值低电平 | VEN(OFF) | 0.93 | 1 | 1.05 | V |  | 5 |
| UVP 跳变阈值 | VUVP | 55 | 60 | 65 | % |  | 6 |
| VIN 电源电流 (ECO 版本) | IVIN |  | 110 |  | µA | 无负载，VEN = 1.5V，非开关，ECO 版本 | 5 |
| VIN 关断电流 | IINSDN |  | 7 |  | µA | VEN = 0V | 5 |
| UVLO VIN 迟滞电压 |  |  | 400 |  | mV |  | 5 |
| 高侧 MOSFET Rds(on) | RDS(ON)HI |  | 100 |  | mΩ | TJ = 25°C | 5 |
| 低侧 MOSFET Rds(on) | RDS(ON)LO |  | 55 |  | mΩ | TJ = 25°C | 5 |
| 开关频率 | FSW |  | 1280 |  | kHz | VOUT = 3.3V | 5 |
| 最短关断时间 | TOFF(MIN) |  | 100 |  | ns | VFB = 0.5V | 5 |
| 最短导通时间 | TON(MIN) |  | 55 |  | ns |  | 5 |
| EN 迟滞 | VENHYS |  | 200 |  | mV |  | 5 |
| EN 下拉电流 | IEN |  | 1 |  | uA | VEN = 1.5V | 6 |
| 内部软启动时间 | tSS |  | 1.4 |  | ms | VOUT 从 0 到目标值 | 6 |
| UVP 传播抗尖峰脉冲 | tUVPDLY |  | 256 |  | us |  | 6 |
| 连续断续模式开关时间 | tUVPON |  | 1.5 |  | ms | 硬短路，UVP 检测 | 6 |
| 连续断续模式非开关时间 | tUVPOFF |  | 13 |  | ms | 硬短路，UVP 检测 | 6 |
| OTP 跳变阈值 | TOTP |  | 155 |  | °C |  | 6 |
| OTP 迟滞 | TOTPHSY |  | 20 |  | °C |  | 6 |
| 结至环境热阻 RθJA | RθJA |  | 147.4 |  | °C/W |  | 5 |
| EVM 板结到环境热阻 RθJA_effective | RθJA_effective |  | 73 |  | °C/W | EVM 板，TA = 25°C | 5 |
| 结至外壳（顶部）热阻 RθJC(top) | RθJC(top) |  | 75.7 |  | °C/W |  | 5 |
| 结至电路板热阻 RθJB | RθJB |  | 32.2 |  | °C/W |  | 5 |
| 结至顶部特征参数 ΨJT | ΨJT |  | 2.1 |  | °C/W |  | 5 |
| 结至电路板特征参数 YJB | YJB |  | 31.8 |  | °C/W |  | 5 |

## CAD (KiCad official)

- Symbol: `TPS561243DRLR`
- Footprint: `Package_TO_SOT_SMD:SOT-563`
- 3D model: SOT-563 (KiCad packages3D, STEP)
- 3D model files: `tps561243drlr-etched.step` / `tps561243drlr-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `tps561243drlr.step` / `tps561243drlr.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [TI(德州仪器) datasheet](https://www.ti.com.cn/cn/lit/ds/symlink/tps561243.pdf) (26 pp, sha256 `781a0e385b4d2221`, retrieved 2026-10-17, tier: lcsc)
- **Datasheet language:** Chinese. Pin names, descriptions, and specs on this page were extracted and translated to English by ds2sf; the linked PDF is the manufacturer original.
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/tps561243drlr-datasheet.pdf)