# TPS55340RTET

**Texas Instruments** · DC-DC Converters · WQFN-16-EP(3x3)

TPS55340RTET from Texas Instruments, in a WQFN-16-EP(3x3). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | SW | passive | Drain of the internal power MOSFET switch; connect to the switched side of the boost or SEPIC inductor or the flyback transformer. |
| 2 | VIN | power_in | Input supply pin to the IC; connect to a supply voltage between 2.9 V and 32 V, which may differ from the boost power stage input. |
| 3 | EN | input | Enable pin; when the voltage on this pin falls below the enable threshold for more than 1 ms, the IC turns off. |
| 4 | SS | passive | Soft-start programming pin; a capacitor between SS and AGND programs the soft-start timing. |
| 5 | SYNC | input | Switching frequency synchronization pin; an external clock signal can set the switching frequency between 200 kHz and 1.0 MHz, otherwise tie to AGND. |
| 6 | AGND | power_in | Signal ground of the IC. |
| 7 | COMP | output | Output of the transconductance error amplifier; an external RC network connected to this pin compensates the regulator feedback loop. |
| 8 | FB | input | Error amplifier input and feedback pin for positive voltage regulation; connect to the center tap of a resistor divider to program the output voltage. |
| 9 | FREQ | passive | Switching frequency program pin; an external resistor connected between FREQ and AGND sets the switching frequency. |
| 10 | NC | unconnected | Reserved pin that must be connected to ground (TI recommends connecting NC to AGND). |
| 11 | PGND | power_in | Power ground of the IC; connected to the source of the internal power MOSFET switch. |
| 12 | PGND | power_in | Power ground of the IC; connected to the source of the internal power MOSFET switch. |
| 13 | PGND | power_in | Power ground of the IC; connected to the source of the internal power MOSFET switch. |
| 14 | NC | unconnected | Reserved pin that must be connected to ground (TI recommends connecting NC to AGND). |
| 15 | SW | passive | Drain of the internal power MOSFET switch; connect to the switched side of the boost or SEPIC inductor or the flyback transformer. |
| 16 | SW | passive | Drain of the internal power MOSFET switch; connect to the switched side of the boost or SEPIC inductor or the flyback transformer. |
| 17 | PowerPAD | power_in | Exposed thermal pad; should be soldered to AGND, and thermal vias to an internal ground plane are recommended for improved power dissipation. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | Texas Instruments |
| Package | WQFN-16-EP(3x3) |
| Category | Power Management (PMIC) |
| Pins | 17 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Supply voltages on pin VIN |  | -0.3 |  | 34 | V | Referenced to network ground terminal | 4 |
| Voltage on pin EN |  | -0.3 |  | 34 | V | Referenced to network ground terminal | 4 |
| Voltage on pins FB, FREQ, and COMP |  | -0.3 |  | 3 | V | Referenced to network ground terminal | 4 |
| Voltage on pin SS |  | -0.3 |  | 5 | V | Referenced to network ground terminal | 4 |
| Voltage on pin SYNC |  | -0.3 |  | 7 | V | Referenced to network ground terminal | 4 |
| Voltage on pin SW |  | -0.3 |  | 40 | V | Referenced to network ground terminal | 4 |
| Operating junction temperature |  | -40 |  | 150 | °C | Over operating temperature range | 4 |
| Storage temperature | Tstg | -65 |  | 150 | °C |  | 4 |
| VIN Input voltage range | VIN | 2.9 |  | 32 | V |  | 4 |
| Output voltage range | VOUT |  |  | 38 | V |  | 4 |
| EN voltage range | VEN | 0 |  | 32 | V |  | 4 |
| External switching frequency logic input range | VSYN | 0 |  | 5 | V |  | 4 |
| Operating free-air temperature | TA | -40 |  | 125 | °C |  | 4 |
| Operating junction temperature | TJ | -40 |  | 150 | °C |  | 4 |
| VIN Input voltage range | VIN | 2.9 |  | 32 | V |  | 5 |
| Operating quiescent current into VIN | IQ |  |  | 0.5 | mA | Device nonswitching, VFB = 2 V | 5 |
| Shutdown current | ISD |  | 2.7 | 10 | µA | EN = GND | 5 |
| Undervoltage lockout threshold | VUVLO |  | 2.5 | 2.7 | V | VIN falling | 5 |
| Undervoltage lockout hysteresis | Vhys | 120 | 140 | 160 | mV |  | 5 |
| EN threshold voltage (rising) | VEN | 0.9 | 1.08 | 1.3 | V | EN rising input | 5 |
| EN threshold voltage (falling) | VEN | 0.74 | 0.92 | 1.125 | V | EN falling input | 5 |
| EN pulldown resistor | REN | 400 | 950 | 1600 | kΩ |  | 5 |
| Voltage feedback regulation voltage | VREF | 1.204 | 1.229 | 1.254 | V |  | 5 |
| Voltage feedback regulation voltage | VREF | 1.22 | 1.229 | 1.238 | V | TA = 25°C | 5 |
| Voltage feedback input bias current | IFB |  | 1.6 | 20 | nA | TA = 25°C | 5 |
| Error amplifier transconductance | Gea | 240 | 360 | 440 | µS |  | 5 |
| Frequency | fSW | 75 | 94 | 130 | kHz | RFREQ = 480 kΩ | 5 |
| Frequency | fSW | 460 | 577 | 740 | kHz | FREQ = 80 kΩ | 5 |
| Frequency | fSW | 920 | 1140 | 1480 | kHz | RFREQ = 40 kΩ | 5 |
| Maximum duty cycle | Dmax | 89 | 96 |  | % | VFB = 1.0 V, RFREQ = 80 kΩ | 5 |
| N-channel MOSFET on-resistance | RDS(ON) |  | 60 | 110 | mΩ | VIN = 5 V | 5 |
| N-channel MOSFET on-resistance | RDS(ON) |  | 70 | 120 | mΩ | VIN = 3 V | 5 |
| N-channel MOSFET current limit | ILIM | 5.25 | 6.6 | 7.75 | A | D = Dmax | 5 |
| Junction-to-ambient thermal resistance (QFN, 16 pins) | RθJA |  | 43.3 |  | °C/W |  | 4 |
| Junction-to-case (top) thermal resistance (QFN, 16 pins) | RθJC(top) |  | 38.7 |  | °C/W |  | 4 |
| Junction-to-board thermal resistance (QFN, 16 pins) | RθJB |  | 14.5 |  | °C/W |  | 4 |
| Junction-to-top characterization parameter (QFN, 16 pins) | ψJT |  | 0.4 |  | °C/W |  | 4 |
| Junction-to-board characterization parameter (QFN, 16 pins) | ψJB |  | 14.5 |  | °C/W |  | 4 |
| Junction-to-case (bottom) thermal resistance (QFN, 16 pins) | RθJC(bot) |  | 3.5 |  | °C/W |  | 4 |

## CAD (KiCad official)

- Symbol: `TPS55340RTET`
- Footprint: `Package_DFN_QFN:QFN-16-1EP_3x3mm_P0.5mm_EP1.7x1.7mm`
- 3D model: WQFN-16-EP(3x3) (KiCad packages3D, STEP)
- 3D model files: `tps55340rtet-etched.step` / `tps55340rtet-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `tps55340rtet.step` / `tps55340rtet.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [Texas Instruments datasheet](https://www.ti.com/cn/lit/gpn/tps55340) (45 pp, sha256 `05e4069b78ee3f03`, retrieved 2026-09-24, tier: lcsc)
- **Datasheet language:** Chinese. Pin names, descriptions, and specs on this page were extracted and translated to English by ds2sf; the linked PDF is the manufacturer original.
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.2`, primary `claude-haiku-4-5-20251001` (text), consensus `claude-sonnet-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/tps55340rtet-datasheet.pdf)