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TPS54628DDAR
Public Made by Adomby adom
Texas Instruments DC-DC Converters, SOIC-8-EP. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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tps54628ddar: specified limits as data (metadata.characteristics, 58 rows from the datasheet)
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26d ago
TPS54628DDAR
Texas Instruments · DC-DC Converters · SOIC-8-EP
TPS54628DDAR from Texas Instruments, in a SOIC-8-EP. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | EN | input | Enable input control; EN is active high and must be pulled up to enable the device, with a recommended input range of -0.1 V to 18 V. |
| 2 | VFB | input | Converter feedback input, connected to the output voltage through a feedback resistor divider, with a recommended range of -0.1 V to 5.5 V. |
| 3 | VREG5 | power_out | 5.5 V internal supply output that requires a typical 1 µF capacitor to GND, is not active when EN is low, and is rated for an output current of 0 to 5 mA. |
| 4 | SS | passive | Soft-start control pin where an external capacitor to GND sets the start-up ramp, sourced by a 6 µA typical charge current, with a recommended range of -0.1 V to 5.7 V. |
| 5 | GND | power_in | Ground pin and power ground return for the switching circuit, which must be connected to the exposed thermal pad and returned at a single point for the sensitive SS and VFB returns. |
| 6 | SW | power_out | Switch node between the high-side and low-side NFETs, with a recommended range of -1.8 V to 18 V (10 ns transient -3 V to 21 V). |
| 7 | VBST | power_in | Supply input for the high-side FET gate drive, which requires a 0.1 µF capacitor between VBST and SW, with a recommended VBST-to-SW range of -0.1 V to 6.0 V. |
| 8 | VIN | power_in | Input voltage supply pin with a recommended operating range of 4.5 V to 18 V. |
| 9 | PowerPAD | passive | Exposed pad (from the footprint; not named in the datasheet pin table). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Texas Instruments |
| Package | SOIC-8-EP |
| Category | Power Management (PMIC) |
| Pins | 9 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Input voltage range VIN, EN | VIN, EN | -0.3 | 20 | V | 2 | ||
| Input voltage range VBST | VBST | -0.3 | 26 | V | 2 | ||
| Input voltage range VBST (10 ns transient) | VBST | -0.3 | 28 | V | 10 ns transient | 2 | |
| Input voltage range VBST (vs SW) | VBST (vs SW) | -0.3 | 6.5 | V | 2 | ||
| Input voltage range VFB, SS | VFB, SS | -0.3 | 6.5 | V | 2 | ||
| Input voltage range SW | SW | -2 | 20 | V | 2 | ||
| Input voltage range SW (10 ns transient) | SW | -3 | 22 | V | 10 ns transient | 2 | |
| Output voltage range VREG5 | VREG5 | -0.3 | 6.5 | V | 2 | ||
| Output voltage range GND | GND | -0.3 | 0.3 | V | 2 | ||
| Voltage from GND to thermal pad | Vdiff | -0.2 | 0.2 | V | 2 | ||
| Electrostatic discharge Human Body Model (HBM) | 2 | kV | 2 | ||||
| Electrostatic discharge Charged Device Model (CDM) | 500 | V | 2 | ||||
| Operating junction temperature | TJ | -40 | 150 | °C | 2 | ||
| Storage temperature | Tstg | -55 | 150 | °C | 2 | ||
| Supply input voltage range | VIN | 4.5 | 18 | V | 3 | ||
| Input voltage range VBST | VBST | -0.1 | 24 | V | 3 | ||
| Input voltage range VBST (10 ns transient) | VBST | -0.1 | 27 | V | 10 ns transient | 3 | |
| Input voltage range VBST (vs SW) | VBST(vs SW) | -0.1 | 6 | V | 3 | ||
| Input voltage range SS | SS | -0.1 | 5.7 | V | 3 | ||
| Input voltage range EN | EN | -0.1 | 18 | V | 3 | ||
| Input voltage range VFB | VFB | -0.1 | 5.5 | V | 3 | ||
| Input voltage range SW | SW | -1.8 | 18 | V | 3 | ||
| Input voltage range SW (10 ns transient) | SW | -3 | 21 | V | 10 ns transient | 3 | |
| Input voltage range GND | GND | -0.1 | 0.1 | V | 3 | ||
| Output voltage range VREG5 | VREG5 | -0.1 | 5.7 | V | 3 | ||
| Output current range IVREG5 | IO | 0 | 5 | mA | 3 | ||
| Operating free-air temperature | TA | -40 | 85 | °C | 3 | ||
| Operating junction temperature | TJ | -40 | 150 | °C | 3 | ||
| VIN current, operating non-switching supply current | IVIN | 950 | 1400 | μA | TA = 25°C, EN = 5 V, VFB = 0.8 V | 3 | |
| VIN current, shutdown supply current | IVINSDN | 3 | 10 | μA | TA = 25°C, EN = 0 V | 3 | |
| EN pin resistance to GND | REN | 200 | 400 | 800 | kΩ | VEN = 12 V | 3 |
| VFB threshold voltage (continuous mode, 25°C) | VFBTH | 757 | 765 | 773 | mV | TA = 25°C, VO = 1.05 V, continuous mode operation | 3 |
| VFB threshold voltage (continuous mode, -40 to 85°C) | VFBTH | 751 | 765 | 779 | mV | TA = -40 to 85°C, VO = 1.05 V, continuous mode operation | 3 |
| VFB input current | IVFB | -0.15 | 0 | 0.15 | μA | VFB = 0.8 V, TA = 25°C | 3 |
| VREG5 output voltage | VVREG5 | 5.2 | 5.5 | 5.7 | V | TA = 25°C, 6 V < VIN < 18 V, 0 < IVREG5 < 5 mA | 3 |
| UVLO wake up VREG5 voltage | 3.45 | 3.75 | 4.05 | V | 4 | ||
| UVLO hysteresis VREG5 voltage | 0.13 | 0.32 | 0.48 | V | 4 | ||
| Current limit | IOCL | 6.7 | 7.3 | 8.9 | A | L out = 1.5 μH | 3 |
| SS charge current | ISS | 4.2 | 6 | 7.8 | μA | VSS = 1 V | 4 |
| EN high-level input voltage | VEN | 1.6 | V | 3 | |||
| EN low-level input voltage | VEN | 0.6 | V | 3 | |||
| VFB threshold voltage (Eco-mode) | VFBTH | 772 | mV | TA = 25°C, VO = 1.05 V, IO = 10 mA, Eco-mode operation | 3 | ||
| Output current | IVREG5 | 20 | mA | VIN = 6 V, VREG5 = 4.0 V, TA = 25°C | 3 | ||
| High side switch resistance | RDS(on) | 36 | mΩ | 25°C, VBST - SW = 5.5 V | 3 | ||
| Low side switch resistance | RDS(on) | 28 | mΩ | 25°C | 3 | ||
| Thermal shutdown threshold | TSDN | 165 | °C | 4 | |||
| Thermal shutdown hysteresis | 35 | °C | 4 | ||||
| On time | tON | 150 | ns | VIN = 12 V, VO = 1.05 V | 4 | ||
| Output OVP threshold | VOVP | 125 | % | OVP Detect (L > H) | 4 | ||
| Output hiccup threshold | VHICCUP | 65 | % | Hiccup detect (H > L) | 4 | ||
| Output hiccup delay | THICCUPDELAY | 250 | µsec | To hiccup state | 4 | ||
| Output hiccup enable delay | THICCUPENDELAY | 1.7 | x | Relative to soft-start time | 4 | ||
| Junction-to-ambient thermal resistance | θJA | 43.5 | °C/W | 2 | |||
| Junction-to-case (top) thermal resistance | θJCtop | 49.4 | °C/W | 2 | |||
| Junction-to-board thermal resistance | θJB | 25.6 | °C/W | 2 | |||
| Junction-to-top characterization parameter | ψJT | 7.4 | °C/W | 2 | |||
| Junction-to-board characterization parameter | ψJB | 25.5 | °C/W | 2 | |||
| Junction-to-case (bottom) thermal resistance | θJCbot | 5.2 | °C/W | 2 |
CAD (KiCad official)
- Symbol:
TPS54628DDAR - Footprint:
Package_SO:SOIC-8-1EP_3.9x4.9mm_P1.27mm_EP2.29x3mm - 3D model: SOIC-8-EP (KiCad packages3D, STEP)
- 3D model files:
tps54628ddar-etched.step/tps54628ddar-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);tps54628ddar.step/tps54628ddar.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Texas Instruments datasheet (25 pp, sha256
842f26cf9d65474f, retrieved 2026-10-11, tier: lcsc) - Datasheet language: Chinese. Pin names, descriptions, and specs on this page were extracted and translated to English by ds2sf; the linked PDF is the manufacturer original.
- Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# TPS54628DDAR
**Texas Instruments** · DC-DC Converters · SOIC-8-EP
TPS54628DDAR from Texas Instruments, in a SOIC-8-EP. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | EN | input | Enable input control; EN is active high and must be pulled up to enable the device, with a recommended input range of -0.1 V to 18 V. |
| 2 | VFB | input | Converter feedback input, connected to the output voltage through a feedback resistor divider, with a recommended range of -0.1 V to 5.5 V. |
| 3 | VREG5 | power_out | 5.5 V internal supply output that requires a typical 1 µF capacitor to GND, is not active when EN is low, and is rated for an output current of 0 to 5 mA. |
| 4 | SS | passive | Soft-start control pin where an external capacitor to GND sets the start-up ramp, sourced by a 6 µA typical charge current, with a recommended range of -0.1 V to 5.7 V. |
| 5 | GND | power_in | Ground pin and power ground return for the switching circuit, which must be connected to the exposed thermal pad and returned at a single point for the sensitive SS and VFB returns. |
| 6 | SW | power_out | Switch node between the high-side and low-side NFETs, with a recommended range of -1.8 V to 18 V (10 ns transient -3 V to 21 V). |
| 7 | VBST | power_in | Supply input for the high-side FET gate drive, which requires a 0.1 µF capacitor between VBST and SW, with a recommended VBST-to-SW range of -0.1 V to 6.0 V. |
| 8 | VIN | power_in | Input voltage supply pin with a recommended operating range of 4.5 V to 18 V. |
| 9 | PowerPAD | passive | Exposed pad (from the footprint; not named in the datasheet pin table). |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Texas Instruments |
| Package | SOIC-8-EP |
| Category | Power Management (PMIC) |
| Pins | 9 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Input voltage range VIN, EN | VIN, EN | -0.3 | | 20 | V | | 2 |
| Input voltage range VBST | VBST | -0.3 | | 26 | V | | 2 |
| Input voltage range VBST (10 ns transient) | VBST | -0.3 | | 28 | V | 10 ns transient | 2 |
| Input voltage range VBST (vs SW) | VBST (vs SW) | -0.3 | | 6.5 | V | | 2 |
| Input voltage range VFB, SS | VFB, SS | -0.3 | | 6.5 | V | | 2 |
| Input voltage range SW | SW | -2 | | 20 | V | | 2 |
| Input voltage range SW (10 ns transient) | SW | -3 | | 22 | V | 10 ns transient | 2 |
| Output voltage range VREG5 | VREG5 | -0.3 | | 6.5 | V | | 2 |
| Output voltage range GND | GND | -0.3 | | 0.3 | V | | 2 |
| Voltage from GND to thermal pad | Vdiff | -0.2 | | 0.2 | V | | 2 |
| Electrostatic discharge Human Body Model (HBM) | | | | 2 | kV | | 2 |
| Electrostatic discharge Charged Device Model (CDM) | | | | 500 | V | | 2 |
| Operating junction temperature | TJ | -40 | | 150 | °C | | 2 |
| Storage temperature | Tstg | -55 | | 150 | °C | | 2 |
| Supply input voltage range | VIN | 4.5 | | 18 | V | | 3 |
| Input voltage range VBST | VBST | -0.1 | | 24 | V | | 3 |
| Input voltage range VBST (10 ns transient) | VBST | -0.1 | | 27 | V | 10 ns transient | 3 |
| Input voltage range VBST (vs SW) | VBST(vs SW) | -0.1 | | 6 | V | | 3 |
| Input voltage range SS | SS | -0.1 | | 5.7 | V | | 3 |
| Input voltage range EN | EN | -0.1 | | 18 | V | | 3 |
| Input voltage range VFB | VFB | -0.1 | | 5.5 | V | | 3 |
| Input voltage range SW | SW | -1.8 | | 18 | V | | 3 |
| Input voltage range SW (10 ns transient) | SW | -3 | | 21 | V | 10 ns transient | 3 |
| Input voltage range GND | GND | -0.1 | | 0.1 | V | | 3 |
| Output voltage range VREG5 | VREG5 | -0.1 | | 5.7 | V | | 3 |
| Output current range IVREG5 | IO | 0 | | 5 | mA | | 3 |
| Operating free-air temperature | TA | -40 | | 85 | °C | | 3 |
| Operating junction temperature | TJ | -40 | | 150 | °C | | 3 |
| VIN current, operating non-switching supply current | IVIN | | 950 | 1400 | μA | TA = 25°C, EN = 5 V, VFB = 0.8 V | 3 |
| VIN current, shutdown supply current | IVINSDN | | 3 | 10 | μA | TA = 25°C, EN = 0 V | 3 |
| EN pin resistance to GND | REN | 200 | 400 | 800 | kΩ | VEN = 12 V | 3 |
| VFB threshold voltage (continuous mode, 25°C) | VFBTH | 757 | 765 | 773 | mV | TA = 25°C, VO = 1.05 V, continuous mode operation | 3 |
| VFB threshold voltage (continuous mode, -40 to 85°C) | VFBTH | 751 | 765 | 779 | mV | TA = -40 to 85°C, VO = 1.05 V, continuous mode operation | 3 |
| VFB input current | IVFB | -0.15 | 0 | 0.15 | μA | VFB = 0.8 V, TA = 25°C | 3 |
| VREG5 output voltage | VVREG5 | 5.2 | 5.5 | 5.7 | V | TA = 25°C, 6 V < VIN < 18 V, 0 < IVREG5 < 5 mA | 3 |
| UVLO wake up VREG5 voltage | | 3.45 | 3.75 | 4.05 | V | | 4 |
| UVLO hysteresis VREG5 voltage | | 0.13 | 0.32 | 0.48 | V | | 4 |
| Current limit | IOCL | 6.7 | 7.3 | 8.9 | A | L out = 1.5 μH | 3 |
| SS charge current | ISS | 4.2 | 6 | 7.8 | μA | VSS = 1 V | 4 |
| EN high-level input voltage | VEN | | 1.6 | | V | | 3 |
| EN low-level input voltage | VEN | | 0.6 | | V | | 3 |
| VFB threshold voltage (Eco-mode) | VFBTH | | 772 | | mV | TA = 25°C, VO = 1.05 V, IO = 10 mA, Eco-mode operation | 3 |
| Output current | IVREG5 | | 20 | | mA | VIN = 6 V, VREG5 = 4.0 V, TA = 25°C | 3 |
| High side switch resistance | RDS(on) | | 36 | | mΩ | 25°C, VBST - SW = 5.5 V | 3 |
| Low side switch resistance | RDS(on) | | 28 | | mΩ | 25°C | 3 |
| Thermal shutdown threshold | TSDN | | 165 | | °C | | 4 |
| Thermal shutdown hysteresis | | | 35 | | °C | | 4 |
| On time | tON | | 150 | | ns | VIN = 12 V, VO = 1.05 V | 4 |
| Output OVP threshold | VOVP | | 125 | | % | OVP Detect (L > H) | 4 |
| Output hiccup threshold | VHICCUP | | 65 | | % | Hiccup detect (H > L) | 4 |
| Output hiccup delay | THICCUPDELAY | | 250 | | µsec | To hiccup state | 4 |
| Output hiccup enable delay | THICCUPENDELAY | | 1.7 | | x | Relative to soft-start time | 4 |
| Junction-to-ambient thermal resistance | θJA | | 43.5 | | °C/W | | 2 |
| Junction-to-case (top) thermal resistance | θJCtop | | 49.4 | | °C/W | | 2 |
| Junction-to-board thermal resistance | θJB | | 25.6 | | °C/W | | 2 |
| Junction-to-top characterization parameter | ψJT | | 7.4 | | °C/W | | 2 |
| Junction-to-board characterization parameter | ψJB | | 25.5 | | °C/W | | 2 |
| Junction-to-case (bottom) thermal resistance | θJCbot | | 5.2 | | °C/W | | 2 |
## CAD (KiCad official)
- Symbol: `TPS54628DDAR`
- Footprint: `Package_SO:SOIC-8-1EP_3.9x4.9mm_P1.27mm_EP2.29x3mm`
- 3D model: SOIC-8-EP (KiCad packages3D, STEP)
- 3D model files: `tps54628ddar-etched.step` / `tps54628ddar-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `tps54628ddar.step` / `tps54628ddar.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Texas Instruments datasheet](https://www.ti.com/cn/lit/gpn/tps54628) (25 pp, sha256 `842f26cf9d65474f`, retrieved 2026-10-11, tier: lcsc)
- **Datasheet language:** Chinese. Pin names, descriptions, and specs on this page were extracted and translated to English by ds2sf; the linked PDF is the manufacturer original.
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/tps54628ddar-datasheet.pdf)