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TPS54613PWPR
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Texas Instruments DC-DC Converters, HTSSOP-28-EP. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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TPS54613PWPR
Texas Instruments · DC-DC Converters · HTSSOP-28-EP
TPS54613PWPR from Texas Instruments, in a HTSSOP-28-EP. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | AGND | power_in | Analog ground and return for the slow-start capacitor, VBIAS capacitor and RT resistor; it must be connected to the PowerPAD. |
| 2 | VSENSE | input | Error amplifier inverting input that must be connected directly to the output voltage sense point. |
| 3 | NC | unconnected | No connection. |
| 4 | PWRGD | output | Open-drain powergood output that is high-Z when VSENSE is at or above 90% of Vref and low otherwise, and is also low when SS/ENA is low or internal shutdown is active. |
| 5 | BOOT | power_out | Bootstrap input; a 0.022-µF to 0.1-µF low-ESR capacitor connected from BOOT to PH generates the floating drive for the high-side FET driver. |
| 6 | PH | output | Phase node at the junction of the internal high-side and low-side power MOSFETs and the output inductor; all PH pins should be tied together and routed to the output inductor. |
| 7 | PH | output | Phase node at the junction of the internal high-side and low-side power MOSFETs and the output inductor; all PH pins should be tied together and routed to the output inductor. |
| 8 | PH | output | Phase node at the junction of the internal high-side and low-side power MOSFETs and the output inductor; all PH pins should be tied together and routed to the output inductor. |
| 9 | PH | output | Phase node at the junction of the internal high-side and low-side power MOSFETs and the output inductor; all PH pins should be tied together and routed to the output inductor. |
| 10 | PH | output | Phase node at the junction of the internal high-side and low-side power MOSFETs and the output inductor; all PH pins should be tied together and routed to the output inductor. |
| 11 | PH | output | Phase node at the junction of the internal high-side and low-side power MOSFETs and the output inductor; all PH pins should be tied together and routed to the output inductor. |
| 12 | PH | output | Phase node at the junction of the internal high-side and low-side power MOSFETs and the output inductor; all PH pins should be tied together and routed to the output inductor. |
| 13 | PH | output | Phase node at the junction of the internal high-side and low-side power MOSFETs and the output inductor; all PH pins should be tied together and routed to the output inductor. |
| 14 | PH | output | Phase node at the junction of the internal high-side and low-side power MOSFETs and the output inductor; all PH pins should be tied together and routed to the output inductor. |
| 15 | PGND | power_in | Power ground and high-current return for the low-side driver and power MOSFET, to be connected with large copper areas to the input and output supply returns. |
| 16 | PGND | power_in | Power ground and high-current return for the low-side driver and power MOSFET, to be connected with large copper areas to the input and output supply returns. |
| 17 | PGND | power_in | Power ground and high-current return for the low-side driver and power MOSFET, to be connected with large copper areas to the input and output supply returns. |
| 18 | PGND | power_in | Power ground and high-current return for the low-side driver and power MOSFET, to be connected with large copper areas to the input and output supply returns. |
| 19 | PGND | power_in | Power ground and high-current return for the low-side driver and power MOSFET, to be connected with large copper areas to the input and output supply returns. |
| 20 | VIN | power_in | Input supply for the power MOSFET switches and internal bias regulator, operating from 3 V to 6 V and to be bypassed to PGND with a low-ESR 1-µF to 10-µF ceramic capacitor placed close to the package. |
| 21 | VIN | power_in | Input supply for the power MOSFET switches and internal bias regulator, operating from 3 V to 6 V and to be bypassed to PGND with a low-ESR 1-µF to 10-µF ceramic capacitor placed close to the package. |
| 22 | VIN | power_in | Input supply for the power MOSFET switches and internal bias regulator, operating from 3 V to 6 V and to be bypassed to PGND with a low-ESR 1-µF to 10-µF ceramic capacitor placed close to the package. |
| 23 | VIN | power_in | Input supply for the power MOSFET switches and internal bias regulator, operating from 3 V to 6 V and to be bypassed to PGND with a low-ESR 1-µF to 10-µF ceramic capacitor placed close to the package. |
| 24 | VIN | power_in | Input supply for the power MOSFET switches and internal bias regulator, operating from 3 V to 6 V and to be bypassed to PGND with a low-ESR 1-µF to 10-µF ceramic capacitor placed close to the package. |
| 25 | VBIAS | power_out | Internal bias regulator output supplying the internal circuitry, to be bypassed to AGND with a high-quality low-ESR 0.1-µF to 1-µF ceramic capacitor; absolute maximum source current is 6 mA. |
| 26 | SS/ENA | input | Dual-function slow-start and enable pin that provides a logic input to enable or disable operation and a capacitor input to externally set the start-up time; absolute maximum voltage is 7 V. |
| 27 | FSEL | input | Frequency select logic input that chooses between two internally set switching frequencies; absolute maximum voltage is 7 V. |
| 28 | RT | input | Frequency-setting resistor input; connect a resistor from RT to AGND to set the switching frequency; absolute maximum voltage is 6 V. |
| 29 | EP | passive | Exposed pad (from the footprint; not named in the datasheet pin table). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Texas Instruments |
| Package | HTSSOP-28-EP |
| Category | Power Supply Chip |
| Pins | 29 |
CAD (KiCad official)
- Symbol:
TPS54613PWPR - Footprint:
Package_SO:TSSOP-28-1EP_4.4x9.7mm_P0.65mm_EP2.85x6.7mm - 3D model: HTSSOP-28-EP (KiCad packages3D, STEP)
- 3D model files:
tps54613pwpr-etched.step/tps54613pwpr-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);tps54613pwpr.step/tps54613pwpr.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Texas Instruments datasheet (29 pp, sha256
c94c631e87d000c3, retrieved 2026-10-07, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# TPS54613PWPR
**Texas Instruments** · DC-DC Converters · HTSSOP-28-EP
TPS54613PWPR from Texas Instruments, in a HTSSOP-28-EP. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | AGND | power_in | Analog ground and return for the slow-start capacitor, VBIAS capacitor and RT resistor; it must be connected to the PowerPAD. |
| 2 | VSENSE | input | Error amplifier inverting input that must be connected directly to the output voltage sense point. |
| 3 | NC | unconnected | No connection. |
| 4 | PWRGD | output | Open-drain powergood output that is high-Z when VSENSE is at or above 90% of Vref and low otherwise, and is also low when SS/ENA is low or internal shutdown is active. |
| 5 | BOOT | power_out | Bootstrap input; a 0.022-µF to 0.1-µF low-ESR capacitor connected from BOOT to PH generates the floating drive for the high-side FET driver. |
| 6 | PH | output | Phase node at the junction of the internal high-side and low-side power MOSFETs and the output inductor; all PH pins should be tied together and routed to the output inductor. |
| 7 | PH | output | Phase node at the junction of the internal high-side and low-side power MOSFETs and the output inductor; all PH pins should be tied together and routed to the output inductor. |
| 8 | PH | output | Phase node at the junction of the internal high-side and low-side power MOSFETs and the output inductor; all PH pins should be tied together and routed to the output inductor. |
| 9 | PH | output | Phase node at the junction of the internal high-side and low-side power MOSFETs and the output inductor; all PH pins should be tied together and routed to the output inductor. |
| 10 | PH | output | Phase node at the junction of the internal high-side and low-side power MOSFETs and the output inductor; all PH pins should be tied together and routed to the output inductor. |
| 11 | PH | output | Phase node at the junction of the internal high-side and low-side power MOSFETs and the output inductor; all PH pins should be tied together and routed to the output inductor. |
| 12 | PH | output | Phase node at the junction of the internal high-side and low-side power MOSFETs and the output inductor; all PH pins should be tied together and routed to the output inductor. |
| 13 | PH | output | Phase node at the junction of the internal high-side and low-side power MOSFETs and the output inductor; all PH pins should be tied together and routed to the output inductor. |
| 14 | PH | output | Phase node at the junction of the internal high-side and low-side power MOSFETs and the output inductor; all PH pins should be tied together and routed to the output inductor. |
| 15 | PGND | power_in | Power ground and high-current return for the low-side driver and power MOSFET, to be connected with large copper areas to the input and output supply returns. |
| 16 | PGND | power_in | Power ground and high-current return for the low-side driver and power MOSFET, to be connected with large copper areas to the input and output supply returns. |
| 17 | PGND | power_in | Power ground and high-current return for the low-side driver and power MOSFET, to be connected with large copper areas to the input and output supply returns. |
| 18 | PGND | power_in | Power ground and high-current return for the low-side driver and power MOSFET, to be connected with large copper areas to the input and output supply returns. |
| 19 | PGND | power_in | Power ground and high-current return for the low-side driver and power MOSFET, to be connected with large copper areas to the input and output supply returns. |
| 20 | VIN | power_in | Input supply for the power MOSFET switches and internal bias regulator, operating from 3 V to 6 V and to be bypassed to PGND with a low-ESR 1-µF to 10-µF ceramic capacitor placed close to the package. |
| 21 | VIN | power_in | Input supply for the power MOSFET switches and internal bias regulator, operating from 3 V to 6 V and to be bypassed to PGND with a low-ESR 1-µF to 10-µF ceramic capacitor placed close to the package. |
| 22 | VIN | power_in | Input supply for the power MOSFET switches and internal bias regulator, operating from 3 V to 6 V and to be bypassed to PGND with a low-ESR 1-µF to 10-µF ceramic capacitor placed close to the package. |
| 23 | VIN | power_in | Input supply for the power MOSFET switches and internal bias regulator, operating from 3 V to 6 V and to be bypassed to PGND with a low-ESR 1-µF to 10-µF ceramic capacitor placed close to the package. |
| 24 | VIN | power_in | Input supply for the power MOSFET switches and internal bias regulator, operating from 3 V to 6 V and to be bypassed to PGND with a low-ESR 1-µF to 10-µF ceramic capacitor placed close to the package. |
| 25 | VBIAS | power_out | Internal bias regulator output supplying the internal circuitry, to be bypassed to AGND with a high-quality low-ESR 0.1-µF to 1-µF ceramic capacitor; absolute maximum source current is 6 mA. |
| 26 | SS/ENA | input | Dual-function slow-start and enable pin that provides a logic input to enable or disable operation and a capacitor input to externally set the start-up time; absolute maximum voltage is 7 V. |
| 27 | FSEL | input | Frequency select logic input that chooses between two internally set switching frequencies; absolute maximum voltage is 7 V. |
| 28 | RT | input | Frequency-setting resistor input; connect a resistor from RT to AGND to set the switching frequency; absolute maximum voltage is 6 V. |
| 29 | EP | passive | Exposed pad (from the footprint; not named in the datasheet pin table). |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Texas Instruments |
| Package | HTSSOP-28-EP |
| Category | Power Supply Chip |
| Pins | 29 |
## CAD (KiCad official)
- Symbol: `TPS54613PWPR`
- Footprint: `Package_SO:TSSOP-28-1EP_4.4x9.7mm_P0.65mm_EP2.85x6.7mm`
- 3D model: HTSSOP-28-EP (KiCad packages3D, STEP)
- 3D model files: `tps54613pwpr-etched.step` / `tps54613pwpr-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `tps54613pwpr.step` / `tps54613pwpr.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Texas Instruments datasheet](https://www.ti.com/cn/lit/gpn/tps54612) (29 pp, sha256 `c94c631e87d000c3`, retrieved 2026-10-07, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/tps54613pwpr-datasheet.pdf)