Loads when you scroll to it. Unloads after 5 minutes in the background.

Symbol & Footprint

Schematic Symbol

Open full view ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.

PCB Footprint

Open full view ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.
Loads when you scroll to it. Unloads after 5 minutes in the background.
Download PDF
Contents

README

markdown

TPS26611DDFR

Texas Instruments · Power Management - Specialized · TSOT-23-8

TPS26611DDFR from Texas Instruments, in a TSOT-23-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 GND power_in Reference ground for all internal voltages; connect to GND of the ±Vs supply.
2 MODE input MODE selection pin for overload response; sets current limit to IOL, 2 × IOL, or 2 × IOL with extended IOL expiry time (GND, open, or 180 kΩ to GND), absolute max −0.3 to 5.5 V.
3 -Vs power_in Negative supply for dual supply configurations; connect to GND when used in a single supply configuration (recommended −20 V to 0 V).
4 IN passive Signal/power input, rated for −50 V to 50 V operating (±55 V absolute maximum).
5 OUT passive Signal/power output, rated for −50 V to 50 V operating (±55 V absolute maximum).
6 +Vs power_in Positive supply for powering the device, recommended 0 to 30 V (absolute max 32 V).
7 EN input Enable control on the TPS26611: pull EN low to turn off the device; it has an internal pullup and can be left floating to enable the device.
8 SGOOD output Signal good indicator that is low when the device is within normal operating condition and high on fault conditions; can drive an external LED, sourcing current from +Vs.

Key specifications

Parameter Value
Manufacturer Texas Instruments
Package TSOT-23-8
Category Power Management (PMIC)
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
IN, OUT, IN-OUT voltage -55 55 V 4
SGOOD, EN, MODE, VSNS voltage -0.3 5.5 V 4
+Vs voltage +Vs -0.3 32 V 4
-Vs voltage -Vs -22 0.3 V 4
SGOOD current ISGOOD 200 µA 4
Operating junction temperature TJ -40 150 °C 4
Storage temperature Tstg -65 150 °C 4
IN, OUT voltage -50 50 V 4
+Vs supply voltage +Vs 0 30 V 4
-Vs supply voltage -Vs -20 0 V 4
EN, SGOOD, VSNS voltage 0 5 V 4
MODE voltage 0 3 V 4
Operating junction temperature TJ -40 125 °C 4
IN signal voltage V(IN) -50 50 V 5
Leakage from IN and OUT to GND, normal operation IQ -0.1 0.1 µA (-Vs) < VIN, VOUT < (+Vs, 0.35 V) 5
Leakage from IN and OUT to GND, near +Vs IQ 1 µA (+Vs, 0.35 V) < VIN, VOUT < +Vs 5
Leakage to -Vs during fault, % of loop current IQFLT 20 % VIN > +Vs, Current Limit Operation 5
Bipolar current limit I(OL) 25 32 40 mA V(IN)-V(OUT) = ±1 V, -Vs connected to negative supply; printed ± 5
Unipolar current limit I(OL) 25 32 40 mA V(IN)-V(OUT) = +1 V, -Vs connected to GND 5
Transient pulse over current limit I(OL_Pulse) 50 60 72 mA V(IN)-V(OUT) = +1.5 V, MODE = Floating 5
Fast-trip current limit I(FASTRIP) 65 165 mA MODE = GND; printed ± 5
Fast-trip current limit I(FASTRIP) 140 275 mA MODE = Floating or 180 kΩ to GND; printed ± 5
Off-state leakage sum IN+OUT (VIN swept) IOff-Lkg-IN + IOff-Lkg-OUT -9.75 -5.25 µA -12.5 V < VIN <12.5 V; VOUT = 0 V; EN = Low; +Vs = 15V; -Vs = -15 V 5
Off-state leakage sum IN+OUT (VOUT swept) IOff-Lkg-IN + IOff-Lkg-OUT -9.75 -5.25 µA -12.5 V < VOUT < 12.5 V; VIN = 0 V; EN = Low; +Vs = 15V; -Vs = -15 V 5
Off-state leakage from IN IOff-Lkg-IN -6 -1 µA -12.5 V< VIN <12.5 V; VOUT = 0 V; EN = Low; +Vs = 15V; -Vs = -15 V 5
Off-state leakage from OUT IOff-Lkg-OUT -6 -1 µA -12.5 V < VOUT < 12.5 V; VIN = 0 V; EN = Low; +Vs = 15V; -Vs = -15 V 5
OUT overvoltage threshold, rising (relative to +Vs) VOUT_OVLO 0.05 0.3 V TPS26610/11/13/14 Only; printed (+Vs)+0.05 to (+Vs)+0.30 5
OUT overvoltage hysteresis VOUT_OVLO_hyst 30 75 mV 5
OUT/IN undervoltage threshold, falling (relative to -Vs) VO/I_UVLO -0.4 -0.2 V TPS26610/11/12 Only; printed (-Vs)-0.40 to (-Vs)-0.20 5
OUT/IN undervoltage hysteresis VO/I_UVLO_hyst 30 75 mV TPS26610/11/12 Only 6
+Vs supply operating voltage V(+Vs) 2.25 30 V TPS26610/11/13/14 6
-Vs supply operating voltage V(-Vs) -20 0 V 6
Difference between +Vs and -Vs Vs_DIFF 3 50 V 6
+Vs current, normal operation I(+Vs) 1.07 1.65 mA SGOOD = Floating 6
+Vs current, fault operation I(+Vs) 1.2 1.75 mA SGOOD = Floating 6
Current sinked by -Vs supply I(-Vs) 0.2 mA 6
OFF state supply current IVS_OFF 0.27 mA EN = Low 6
IN to OUT total ON resistance RON 4.8 7.5 12.5 Ω -40 ℃ < T < 125 ℃, I(IN) < Overload Current 6
EN rising threshold V(ENR) 1.72 V 6
EN falling threshold V(ENF) 1 V 6
EN leakage current (sink) I(EN_LKG) 10 µA V(EN) = 5.5 V 6
EN leakage current (source) I(EN_LKG) -10 µA V(EN) = 0 V 6
EN open circuit voltage V(EN) 2.1 2.5 V I(EN) = -0.1 µA 6
SGOOD output level, HIGH VOH_SGOOD 2 3 V (+Vs) > 2.5 V, 0 mA < ISGOOD< 1 mA 7
SGOOD pull down impedance RSGOOD 6.3 kΩ 0 µA < ISGOOD < 200 µA 7
MODE source current I(MODE) 1.55 2 2.4 µA 7
Mode selection resistor RMODE 180 kΩ 7
Thermal shutdown threshold, rising T(TSD) 160 °C 7
Thermal shutdown hysteresis T(TSDHyst) 11 °C 7
Turn ON delay with Vs supply tON_dly 120 µs Delay from +Vs/-Vs supply applied to FET on, EN = Floating 7
Overload current limit response time tOL 30 55 µs Load transient from 20 mA to 50 mA. Time from Load Transient to Current coming within 20%.of IOL. 7
Pulse overload current limit response time tOL_PULSE 20 50 µs Load transient from 20 mA to 80 mA. Time from Load Transient to Current coming within 20% of IOL_Pulse 7
OUT OVLO cutoff detection time tOUT_OV_CUT 1 5 µs V(OUT) ↑ 100 mV above VOUT_OVLO to FET OFF 7
Junction-to-ambient thermal resistance RθJA 117.8 °C/W DDF (SOT-23-THN), 8 pins 4
Junction-to-case (top) thermal resistance RθJC(top) 57.6 °C/W DDF (SOT-23-THN), 8 pins 4
Junction-to-board thermal resistance RθJB 40.2 °C/W DDF (SOT-23-THN), 8 pins 4

CAD (KiCad official)

  • Symbol: TPS26611DDFR
  • Footprint: Package_TO_SOT_SMD:TSOT-23-8
  • 3D model: TSOT-23-8 (KiCad packages3D, STEP)
  • 3D model files: tps26611ddfr-etched.step / tps26611ddfr-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); tps26611ddfr.step / tps26611ddfr.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Texas Instruments datasheet (45 pp, sha256 d7602fcda1d74f81, retrieved 2026-10-31, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF