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TPS26610DDFR

Public Made by Adom

by adom

Texas Instruments LED Drivers, TSOT-23-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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TPS26610DDFR

Texas Instruments · LED Drivers · TSOT-23-8

TPS26610DDFR from Texas Instruments, in a TSOT-23-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 GND power_in Reference ground for all internal voltages; connect to GND of the ±Vs supply.
2 MODE input MODE selection pin for overload response; sets current limit to IOL, 2 × IOL, or 2 × IOL with extended IOL expiry time (0 to 3 V recommended).
3 -Vs power_in Negative supply for dual supply configurations (0 to -20 V recommended); connect to GND in a single supply configuration.
4 IN passive Signal/power input, rated -50 V to 50 V recommended (±55 V absolute maximum).
5 OUT passive Signal/power output, rated -50 V to 50 V recommended (±55 V absolute maximum).
6 +Vs power_in Positive supply for powering the device (0 to 30 V recommended, 32 V absolute maximum).
7 VSNS input Supply sensing input for transition to loop power mode on the TPS26610 and TPS26613; can be left open or floating if not used (0 to 5 V).
8 SGOOD output Signal good indicator that is low during normal operating condition and goes high outside it; can drive an external LED (0 to 5 V).

Key specifications

Parameter Value
Manufacturer Texas Instruments
Package TSOT-23-8
Category Display Modules / LED Drivers / Display Drivers
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
IN, OUT, IN-OUT voltage -55 55 V 4
SGOOD, EN, MODE, VSNS voltage -0.3 5.5 V 4
+Vs voltage +Vs -0.3 32 V 4
-Vs voltage -Vs -22 0.3 V 4
ISGOOD ISGOOD 200 µA Sink current 4
Operating junction temperature TJ -40 150 °C 4
Storage temperature Tstg -65 150 °C 4
Transient junction temperature TJ -65 °C Max is T(TSD) 4
ESD HBM V(ESD) -2000 2000 V HBM, all pins 4
ESD CDM V(ESD) -750 750 V CDM, all pins 4
IN, OUT voltage -50 50 V 4
+Vs supply voltage +Vs 0 30 V 4
-Vs supply voltage -Vs -20 0 V 4
EN, SGOOD, VSNS voltage 0 5 V 4
MODE voltage 0 3 V 4
Operating junction temperature TJ -40 125 °C 4
Junction-to-ambient thermal resistance RθJA 117.8 °C/W DDF (SOT-23-THN), 8 pins 4
Junction-to-case (top) thermal resistance RθJC(top) 57.6 °C/W DDF (SOT-23-THN), 8 pins 4
Junction-to-board thermal resistance RθJB 40.2 °C/W DDF (SOT-23-THN), 8 pins 4
Junction-to-top characterization parameter ΨJT 2.2 °C/W DDF (SOT-23-THN), 8 pins 4
Junction-to-board characterization parameter ΨJB 40 °C/W DDF (SOT-23-THN), 8 pins 5
IN signal voltage V(IN) -50 50 V 5
Sum of leakage current from IN and OUT to GND, normal operation IQ -0.1 0.1 µA (-Vs) < VIN, VOUT < (+Vs, 0.35 V) 5
Bipolar current limit I(OL) 25 32 40 mA V(IN)-V(OUT) = ±1 V, -Vs connected to negative supply; values printed as ± 5
Unipolar current limit I(OL) 25 32 40 mA V(IN)-V(OUT) = +1 V, -Vs connected to GND 5
Transient pulse over current limit I(OL_Pulse) 50 60 72 mA V(IN)-V(OUT) = +1.5 V, MODE = Floating 5
Fast-trip current limit I(FASTRIP) 65 165 mA MODE = GND; values printed as ± 5
Fast-trip current limit I(FASTRIP) 140 275 mA MODE = Floating or 180 kΩ to GND; values printed as ± 5
OUT overvoltage hysteresis VOUT_OVLO_hyst 30 75 mV 5
OUT/IN undervoltage hysteresis VO/I_UVLO_hyst 30 75 mV TPS26610/11/12 Only 6
+Vs supply operating voltage V(+Vs) 2.25 30 V TPS26610/11/13/14 6
-Vs supply operating voltage V(-Vs) -20 0 V 6
Difference between +Vs and -Vs Vs_DIFF 3 50 V 6
+Vs supply current, normal operation I(+Vs) 1.07 1.65 mA SGOOD = Floating 6
+Vs supply current, fault operation I(+Vs) 1.2 1.75 mA SGOOD = Floating 6
Loop test IN to OUT voltage drop V(IN-OUT)no_Vs 5 8.5 V +/-20mA current through IN pin; values printed as ± 6
No supply current limit IOL_noVs 22 45.5 mA values printed as ± 6
IN to OUT total ON resistance RON 4.8 7.5 12.5 Ω -40 ℃ < T < 125 ℃, I(IN) < Overload Current 6
VSNS rising threshold V(SNSR) 1.72 V TPS26610/13 only 6
VSNS falling threshold V(SNSF) 1 V TPS26610/13 only 6
SGOOD output level, HIGH VOH_SGOOD 2 3 V (+Vs) > 2.5 V, 0 mA < ISGOOD < 1 mA 7
SGOOD pull down impedance RSGOOD 6.3 kΩ 0 µA < ISGOOD < 200 µA 7
MODE source current I(MODE) 1.55 2 2.4 µA 7
Mode selection resistor RMODE 180 kΩ 7
Thermal shutdown threshold, rising T(TSD) 160 °C 7
Thermal shutdown hysteresis T(TSDHyst) 11 °C 7
Input small signal bandwidth BW 10 kHz -25 mA < IIN < 25 mA, ΔIIN = 1 mApp at 1 kΩ 7
Turn ON delay with Vs/-Vs supply tON_dly 120 µs Delay from +Vs/-Vs supply applied to FET on, EN = Floating 7
Turn OFF delay with +Vs/-Vs supply tOFF_dly 10 µs Delay from +Vs/-Vs supply removed to FET off, EN = Floating 7
Overload current limit response time tOL 30 55 µs Load transient from 20 mA to 50 mA. Time from Load Transient to Current coming within 20%.of IOL. 7
Pulse overload current limit response time tOL_PULSE 20 50 µs Load transient from 20 mA to 80 mA. Time from Load Transient to Current coming within 20% of IOL_Pulse 7
Fast-trip response time tFASTRIP 5 µs MODE = GND, Current exceeding 120mA to FET off 7
SGOOD deglitch delay, assertion TSG_Deglitch 685 µs Deglitch delay during SGOOD assertion 7
SGOOD deglitch delay, de-assertion TSG_Deglitch 1.3 ms Deglitch delay during SGOOD de-assertion 7
OUT OVLO cutoff detection time tOUT_OV_CUT 1 5 µs V(OUT) ↑ 100 mV above VOUT_OVLO to FET OFF 7
OUT or IN UVLO cutoff detection time tO/I_UV_CUT 1 5 µs OUT/IN ↓100 mV below VO/I_UVLO to FET OFF, TPS26610/11/12 Only 7
OUT cutoff recovery time tOUT_CUT_Rec 21 µs V(OUT) ↓ 100 mV below VOUT_OVLO_hyst to FET ON 7
IN or OUT cutoff recovery time tO/I_CUT_Rec 23.5 µs OUT/IN ↑100 mV above VO/I_UVLO_hyst to FET ON, TPS26610/11/12 Only 8
Overload current limit expiry time tOL_Expiry 100 ms Load transient from 20 mA to 50 mA 8
Pulse overload current expiry tOL_Pulse_Expiry 50 ms Load transient from 20 mA to 100 mA 8
IOL < I < IOL_PULSE expiry timer tOL_Extend 5 s 8
Auto retry timer 1 tRETRY1 0.8 s 8
Auto retry timer 2 tRETRY2 1.6 s 8

CAD (KiCad official)

  • Symbol: TPS26610DDFR
  • Footprint: Package_TO_SOT_SMD:TSOT-23-8
  • 3D model: TSOT-23-8 (KiCad packages3D, STEP)
  • 3D model files: tps26610ddfr-etched.step / tps26610ddfr-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); tps26610ddfr.step / tps26610ddfr.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Texas Instruments datasheet (45 pp, sha256 d7602fcda1d74f81, retrieved 2026-10-22, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF