# TPS2419PWR

**Texas Instruments** · Monitors & Reset Circuits · TSSOP-8

TPS2419PWR from Texas Instruments, in a TSSOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | RSET | input | A resistor from this pin to GND programs the V(A-C) turn-off threshold, and leaving it open gives a slightly positive turn-off threshold. |
| 2 | EN | input | EN must be pulled above 1.3 V to permit normal ORing operation, a low on EN holds GATE low, and it should not be driven above its recommended maximum voltage of 5 V. |
| 3 | RSVD | power_in | This reserved pin must be connected to GND. |
| 4 | GND | power_in | Device ground, which should have a low-impedance connection to the ground plane because it carries several amperes of discharge current when the external MOSFET turns off. |
| 5 | GATE | output | This pin drives the gate of the external N-channel MOSFET to emulate a low forward-voltage diode, with an absolute maximum GATE/BYP voltage of -0.3 V to 30 V. |
| 6 | C | input | This is the cathode voltage sense input and the bias supply for the gate-drive charge pump, which must be at 3 V or greater for the MOSFET to turn on and has an absolute maximum rating of 18 V. |
| 7 | A | input | This is the simulated diode anode voltage sense input and the reference for the BYP charge-pump supply, connected to the MOSFET source in the typical configuration, with an absolute maximum rating of -0.3 V to 18 V. |
| 8 | BYP | bidirectional | A capacitor from BYP to A (2200 pF ceramic recommended) filters the internal charge-pump supply, and shorting this pin to a voltage below A damages the device, with an absolute maximum of -0.3 V to 13 V to A. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | Texas Instruments |
| Package | TSSOP-8 |
| Category | Power Management ICs |
| Pins | 8 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| A, C input voltage range |  | 0 |  | 16.5 | V | Voltages referenced to GND | 3 |
| EN input voltage range |  | 0 |  | 5 | V |  | 3 |
| R(RSET) resistance range | R(RSET) | 1.5 |  |  | kΩ | Printed as 1.5 to ∞ | 3 |
| TJ operating junction temperature | TJ | -40 |  | 125 | °C |  | 3 |
| A to C operational voltage |  |  | 5 |  | V |  | 3 |
| Supply UVLO, V(C) rising |  | 2.25 |  | 2.5 | V | V(C) rising | 3 |
| Supply UVLO hysteresis |  |  | 0.25 |  | V |  | 3 |
| /I(A)/ gate in active region | I(A) |  | 0.66 | 1 | mA | Gate in active region | 3 |
| /I(A)/ gate saturated high | I(A) |  | 0.1 |  | mA | Gate saturated high | 3 |
| C current, worst case, gate in active region | I(C) | 4.25 |  | 6 | mA | Worst case, gate in active region, V(AC) ≤ 0.1 V | 3 |
| C current, gate saturated high | I(C) |  | 1.2 |  | mA | Gate saturated high, V(AC) ≤ 0.1 V | 3 |
| EN threshold voltage, rising | V(EN) | 1.25 | 1.3 | 1.35 | V | V(EN) rising | 3 |
| EN hysteresis |  |  | 29 |  | mV |  | 3 |
| EN response time, enable (rising) |  | 0.65 |  | 1 | µs | V(AC) = 0.1 V, V(EN)↑: 1.1 V → 1.4 V, measure period to V(GATE) = 0.25 V | 3 |
| EN response time, disable (falling) |  | 0.3 |  | 0.6 | µs | V(AC) = 0.1 V, V(EN)↓: 1.4 V → 1.1 V, measure period to V(GATE) = V(ON) - 0.25 V | 3 |
| EN leakage current (source or sink) |  |  |  | 1 | µA | V(EN) = 0.5 V | 3 |
| Forward turn-on voltage | VON | 58 | 65 | 71 | mV | V(A-C) | 3 |
| Turn-off threshold voltage, R(RSET) open | V(A-C) | 1 | 3 | 5 | mV | Gate sinks > 10 mA at V(GATE-A) = 2 V; V(A-C) falling, R(RSET) = open | 3 |
| Turn-off threshold voltage, R(RSET) = 28.7 kΩ | V(A-C) | -17 | -13.25 | -10 | mV | Gate sinks > 10 mA at V(GATE-A) = 2 V; V(A-C) falling, R(RSET) = 28.7 kΩ | 3 |
| Turn-off threshold voltage, R(RSET) = 3.24 kΩ | V(A-C) | -170 | -142 | -114 | mV | Gate sinks > 10 mA at V(GATE-A) = 2 V; V(A-C) falling, R(RSET) = 3.24 kΩ | 3 |
| Turn-off delay |  |  | 70 |  | ns | V(A) = 12 V, V(A-C): 20 mV → -20 mV; measured until V(GATE-A) begins to decrease | 3 |
| Turn-off time |  |  | 130 |  | ns | V(A) = 12 V, C(GATE-GND) = 0.01 µF, V(A-C): 20 mV → -20 mV, measure period to V(GATE) = V(A) | 3 |
| Gate positive drive voltage, V(C) = 3 V | V(GATE-A) | 6 | 7 | 8 | V | V(C) = 3 V, V(A-C) = 200 mV | 4 |
| Gate positive drive voltage, 5 V ≤ VC ≤ 18 V | V(GATE-A) | 9 | 10.2 | 11.5 | V | 5 V ≤ VC ≤ 18 V, V(A-C) = 200 mV | 4 |
| Gate source current |  | 250 | 290 | 350 | µA | V(A-C) = 200 mV, V(GATE-A) = 4 V | 4 |
| Turn-off pulsed current, V(GATE) = 8 V | I(GATE) | 1.75 |  | 2.35 | A | V(A-C) = -0.1 V, V(GATE) = 8 V | 4 |
| Turn-off pulsed current, V(GATE) = 5 V | I(GATE) | 1.25 |  | 1.75 | A | V(A-C) = -0.1 V, V(GATE) = 5 V | 4 |
| Turn-off pulsed current period |  | 7.5 |  | 12.5 | µs |  | 4 |
| Sustain turn-off current, I(GATE) | I(GATE) | 15 |  | 19.5 | mA | V(A-C) = -0.1 V, 3 V ≤ VC ≤ 18 V, 2 V ≤ V(GATE) ≤ 18 V | 4 |
| Thermal shutdown temperature |  |  | 135 |  | °C | Temperature rising, TJ | 4 |
| Thermal hysteresis |  |  | 10 |  | °C |  | 4 |
| A, C voltage |  | -0.3 |  | 18 | V | Voltages referenced to GND | 2 |
| A above C voltage |  |  |  | 7.5 | V |  | 2 |
| C above A voltage |  |  |  | 18 | V |  | 2 |
| GATE, BYP voltage |  | -0.3 |  | 30 | V |  | 2 |
| BYP to A voltage |  | -0.3 |  | 13 | V |  | 2 |
| GATE above BYP voltage |  |  |  | 0.3 | V |  | 2 |
| RSET voltage |  | -0.3 |  | 7 | V |  | 2 |
| EN voltage |  | -0.3 |  | 5.5 | V |  | 2 |
| ESD human body model |  |  |  | 2 | kV | Human body model | 2 |
| ESD charged device model |  |  |  | 500 | V | Charged device model | 2 |
| Thermal resistance junction-to-ambient, PW (TSSOP), low-k | θJA |  | 258 |  | °C/W | PW (TSSOP) package, low-k board | 2 |
| Thermal resistance junction-to-ambient, PW (TSSOP), high-k | θJA |  | 159 |  | °C/W | PW (TSSOP) package, high-k board | 2 |

## CAD (KiCad official)

- Symbol: `TPS2419PWR`
- Footprint: `Package_SO:TSSOP-8_4.4x3mm_P0.65mm`
- 3D model: TSSOP-8 (KiCad packages3D, STEP)
- 3D model files: `tps2419pwr-etched.step` / `tps2419pwr-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `tps2419pwr.step` / `tps2419pwr.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [Texas Instruments datasheet](https://www.ti.com/lit/ds/symlink/tps2419.pdf) (29 pp, sha256 `5d2098bd9b468e95`, retrieved 2026-11-05, tier: manufacturer)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/tps2419pwr-datasheet.pdf)