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TPS2042DR

Texas Instruments · Power Distribution Switches · SOIC-8

TPS2042DR from Texas Instruments, in a SOIC-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 GND power_in Ground reference for the device.
2 IN power_in Input voltage to the two high-side power switches, operating from 2.7 V to 5.5 V.
3 EN1 input Enable input for power switch IN-OUT1; on the TPS2042 a logic low turns the switch on, and the enable is compatible with both TTL and CMOS logic levels.
4 EN2 input Enable input for power switch IN-OUT2; on the TPS2042 a logic low turns the switch on, and the enable is compatible with both TTL and CMOS logic levels.
5 OC2 output Open-drain overcurrent output for power switch IN-OUT2, asserted active low on overcurrent or overtemperature.
6 OUT2 power_out Power-switch output for channel 2, a high-side N-channel MOSFET with a maximum on-state resistance of 135 mΩ at VI(IN) = 5 V.
7 OUT1 power_out Power-switch output for channel 1, a high-side N-channel MOSFET with a maximum on-state resistance of 135 mΩ at VI(IN) = 5 V.
8 OC1 output Open-drain overcurrent output for power switch IN-OUT1, asserted active low on overcurrent or overtemperature.

Key specifications

Parameter Value
Manufacturer Texas Instruments
Package SOIC-8
Category Power Management (PMIC)
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Input voltage range VI(IN) -0.3 6 V All voltages with respect to GND (Note 1) 4
Output voltage range VO(OUTx) -0.3 V Max is VI(IN) + 0.3 V; all voltages with respect to GND (Note 1) 4
Input voltage range enable VI(ENx) or VI(ENx) -0.3 6 V All voltages with respect to GND (Note 1) 4
Operating virtual junction temperature range TJ -40 125 °C 4
Storage temperature range Tstg -65 150 °C 4
Lead temperature soldering 260 °C 1,6 mm (1/16 inch) from case for 10 seconds 4
Electrostatic discharge human body model 2 kV MIL-STD-883C 4
Electrostatic discharge machine model 0.2 kV 4
Input voltage VI(IN) 2.7 5.5 V 4
Input voltage enable VI(ENx) or VI(ENx) 0 5.5 V 4
Continuous output current IO(OUTx) 0 500 mA 4
Operating virtual junction temperature TJ -40 125 °C 4
Static drain-source on-state resistance, 5-V operation rDS(on) 80 95 mΩ VI(IN) = 5 V, IO = 0.5 A, TJ = 25°C 5
Static drain-source on-state resistance, 5-V operation rDS(on) 90 120 mΩ VI(IN) = 5 V, IO = 0.5 A, TJ = 85°C 5
Static drain-source on-state resistance, 5-V operation rDS(on) 100 135 mΩ VI(IN) = 5 V, IO = 0.5 A, TJ = 125°C 5
Static drain-source on-state resistance, 3.3-V operation rDS(on) 85 105 mΩ VI(IN) = 3.3 V, IO = 0.5 A, TJ = 25°C 5
Static drain-source on-state resistance, 3.3-V operation rDS(on) 100 135 mΩ VI(IN) = 3.3 V, IO = 0.5 A, TJ = 85°C 5
Static drain-source on-state resistance, 3.3-V operation rDS(on) 115 150 mΩ VI(IN) = 3.3 V, IO = 0.5 A, TJ = 125°C 5
High-level input voltage VIH 2 V 2.7 V ≤ VI(IN) ≤ 5.5 V 5
Low-level input voltage VIL 0.8 V 4.5 V ≤ VI(IN) ≤ 5.5 V 5
Low-level input voltage VIL 0.4 V 2.7 V ≤ VI(IN) ≤ 4.5 V 5
Input current II -0.5 0.5 µA TPS2042: VI(ENx) = 0 V or VI(ENx) = VI(IN) 5
Short-circuit output current IOS 0.7 0.9 1.1 A VI(IN) = 5 V, OUT connected to GND, device enable into short circuit 5
Supply current, no load, low-level output 0.015 1 µA TJ = 25°C, VI(ENx) = VI(IN), TPS2042 6
Supply current, no load, low-level output 10 µA -40°C ≤ TJ ≤ 125°C, VI(ENx) = VI(IN), TPS2042 6
Supply current, no load, high-level output 80 100 µA TJ = 25°C, VI(ENx) = 0 V, TPS2042 6
Supply current, no load, high-level output 100 µA -40°C ≤ TJ ≤ 125°C, VI(ENx) = 0 V, TPS2042 6
Leakage current OUT connected to ground 100 µA -40°C ≤ TJ ≤ 125°C, VI(ENx) = VI(IN), TPS2042 6
Reverse leakage current 0.3 µA IN = high, VI(EN) = 0 V, TJ = 25°C, TPS2042 6
Low-level input voltage (undervoltage lockout) 2 2.5 V 6
Sink current 10 mA VO = 5 V (OCx), specified by design 6
Output low voltage VOL(OCx) 0.5 V IO = 5 mA 6
Off-state current 1 µA VO = 5 V, VO = 3.3 V 6
Thermal resistance junction-to-ambient RθJA 172 °C/W SOIC package 16
Continuous total power dissipation rating 725 mW D (SOIC) package, TA ≤ 25°C 4

CAD (KiCad official)

  • Symbol: TPS2042DR
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOIC-8 (KiCad packages3D, STEP)
  • 3D model files: tps2042dr-etched.step / tps2042dr-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); tps2042dr.step / tps2042dr.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Texas Instruments datasheet (27 pp, sha256 317ebf8ca7ddb20d, retrieved 2026-11-06, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF