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TPS2041BMDBVTEP
Public Made by Adomby adom
Texas Instruments Power Distribution Switches, SOT-23-5. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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TPS2041BMDBVTEP
Texas Instruments · Power Distribution Switches · SOT-23-5
TPS2041BMDBVTEP from Texas Instruments, in a SOT-23-5. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | OUT | output | Power-switch output of the 70-mΩ N-channel high-side MOSFET, with a continuous output current of 0 to 500 mA recommended. |
| 2 | GND | power_in | Ground reference for the device; all voltages are specified with respect to GND. |
| 3 | OC | output | Open-drain overcurrent output, asserted active low on overcurrent or overtemperature, with VOL of 0.4 V maximum at IO(OC) = 5 mA. |
| 4 | EN | input | Enable input where logic low turns on the power switch; VIH is 2 V minimum and VIL is 0.8 V maximum for 2.7 V ≤ VI(IN) ≤ 5.5 V, with VI(EN) rated 0 to 5.5 V. |
| 5 | IN | input | Input voltage pin for the power switch, rated 2.7 V to 5.5 V recommended with an absolute maximum of -0.3 V to 6 V. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Texas Instruments |
| Package | SOT-23-5 |
| Category | Power Management (PMIC) |
| Pins | 5 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Input voltage (IN) | VI(IN) | 2.7 | 5.5 | V | 2 | ||
| Input voltage (EN) | VI(EN) | 0 | 5.5 | V | 2 | ||
| Continuous output current (OUT) | IO(OUT) | 0 | 500 | mA | 2 | ||
| Operating virtual-junction temperature | TJ | -55 | 125 | °C | 2 | ||
| Input voltage range (IN) | VI(IN) | -0.3 | 6 | V | 2 | ||
| Output voltage range (OUT) | VO(OUT) | -0.3 | 6 | V | 2 | ||
| Input voltage range (EN) | VI(EN) | -0.3 | 6 | V | 2 | ||
| Voltage range (OC) | VI(OC) | -0.3 | 6 | V | 2 | ||
| Operating virtual-junction temperature range | TJ | -55 | 135 | °C | 2 | ||
| Storage temperature range | Tstg | -65 | 150 | °C | 2 | ||
| Continuous power dissipation | 182 | mW | at 125°C | 2 | |||
| Lead temperature, soldering | 260 | °C | 1,6 mm (1/16 in) from case for 10 s | 2 | |||
| Electrostatic discharge protection, Human-Body Model (HBM) | 2500 | V | HBM (H2) | 2 | |||
| Electrostatic discharge protection, Machine Model (MM) | 50 | V | MM (M0) | 2 | |||
| Electrostatic discharge protection, Charged-Device Model (CDM) | 1500 | V | CDM (C5) | 2 | |||
| Thermal resistance, junction-to-case | θJC | 55 | °C/W | 2 | |||
| Static drain-source on-state resistance, 5-V or 3.3-V operation | rDS(on) | 70 | 135 | mΩ | VI(IN) = 5 V or 3.3 V, IO = 0.5 A, -55°C ≤ TJ ≤ 125°C | 3 | |
| Static drain-source on-state resistance, 2.7-V operation | rDS(on) | 75 | 150 | mΩ | VI(IN) = 2.7 V, IO = 0.5 A, -55°C ≤ TJ ≤ 125°C | 3 | |
| High-level input voltage (EN) | VIH | 2 | V | 2.7 V ≤ VI(IN) ≤ 5.5 V | 3 | ||
| Low-level input voltage (EN) | VIL | 0.8 | V | 2.7 V ≤ VI(IN) ≤ 5.5 V | 3 | ||
| Input current (EN) | II | -1 | 1 | μA | VI(EN) = 0 V or 5.5 V | 3 | |
| Short-circuit output current, TJ = 25°C | IOS | 0.65 | 1 | 1.3 | A | VI(IN) = 5 V, OUT connected to GND, TJ = 25°C | 3 |
| Short-circuit output current, device enabled into short-circuit | IOS | 0.45 | 1 | 1.55 | A | VI(IN) = 5 V, OUT connected to GND, device enabled into short-circuit, -55°C ≤ TJ ≤ 125°C | 3 |
| Supply current, low-level output, TJ = 25°C | 0.5 | 1 | μA | No load on OUT, TJ = 25°C, VI(EN) = 5.5 V or VI(EN) = 0 V | 3 | ||
| Supply current, low-level output, full temperature range | 0.5 | 5 | μA | VI(EN) = 5.5 V or VI(EN) = 0 V, -55°C ≤ TJ ≤ 125°C | 3 | ||
| Supply current, high-level output, TJ = 25°C | 43 | 60 | μA | No load on OUT, TJ = 25°C, VI(EN) = 0 V or VI(EN) = 5.5 V | 3 | ||
| Supply current, high-level output, full temperature range | 43 | 70 | μA | VI(EN) = 0 V or VI(EN) = 5.5 V, -55°C ≤ TJ ≤ 125°C | 3 | ||
| Leakage current | 1 | μA | OUT connected to ground, -55°C ≤ TJ ≤ 125°C, VI(EN) = 5.5 V or VI(EN) = 0 V | 3 | |||
| Reverse leakage current | 0 | μA | VI(OUT) = 5.5 V, IN = ground, TJ = 25°C | 3 | |||
| Low-level input voltage, IN (UVLO) | 2 | 2.5 | V | 3 | |||
| Hysteresis, IN (UVLO) | 75 | mV | TJ = 25°C | 3 | |||
| Output low voltage, VOL(/OC) | VOL(/OC) | 0.4 | V | IO(OC) = 5 mA | 3 | ||
| Off-state current (OC) | 1 | μA | VO(OC) = 5 V or 3.3 V | 3 | |||
| OC deglitch | 3 | 8 | 16 | ms | OC assertion or deassertion | 3 | |
| Thermal shutdown threshold | 135 | °C | 3 | ||||
| Recovery from thermal shutdown | 125 | °C | 3 | ||||
| Thermal shutdown hysteresis | 10 | °C | 3 |
CAD (KiCad official)
- Symbol:
TPS2041BMDBVTEP - Footprint:
Package_TO_SOT_SMD:SOT-23-5 - 3D model: SOT-23-5 (KiCad packages3D, STEP)
- 3D model files:
tps2041bmdbvtep-etched.step/tps2041bmdbvtep-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);tps2041bmdbvtep.step/tps2041bmdbvtep.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Texas Instruments datasheet (23 pp, sha256
d830ee3c87946a62, retrieved 2026-11-05, tier: manufacturer) - Datasheet language: Chinese. Pin names, descriptions, and specs on this page were extracted and translated to English by ds2sf; the linked PDF is the manufacturer original.
- Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# TPS2041BMDBVTEP
**Texas Instruments** · Power Distribution Switches · SOT-23-5
TPS2041BMDBVTEP from Texas Instruments, in a SOT-23-5. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | OUT | output | Power-switch output of the 70-mΩ N-channel high-side MOSFET, with a continuous output current of 0 to 500 mA recommended. |
| 2 | GND | power_in | Ground reference for the device; all voltages are specified with respect to GND. |
| 3 | OC | output | Open-drain overcurrent output, asserted active low on overcurrent or overtemperature, with VOL of 0.4 V maximum at IO(OC) = 5 mA. |
| 4 | EN | input | Enable input where logic low turns on the power switch; VIH is 2 V minimum and VIL is 0.8 V maximum for 2.7 V ≤ VI(IN) ≤ 5.5 V, with VI(EN) rated 0 to 5.5 V. |
| 5 | IN | input | Input voltage pin for the power switch, rated 2.7 V to 5.5 V recommended with an absolute maximum of -0.3 V to 6 V. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Texas Instruments |
| Package | SOT-23-5 |
| Category | Power Management (PMIC) |
| Pins | 5 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Input voltage (IN) | VI(IN) | 2.7 | | 5.5 | V | | 2 |
| Input voltage (EN) | VI(EN) | 0 | | 5.5 | V | | 2 |
| Continuous output current (OUT) | IO(OUT) | 0 | | 500 | mA | | 2 |
| Operating virtual-junction temperature | TJ | -55 | | 125 | °C | | 2 |
| Input voltage range (IN) | VI(IN) | -0.3 | | 6 | V | | 2 |
| Output voltage range (OUT) | VO(OUT) | -0.3 | | 6 | V | | 2 |
| Input voltage range (EN) | VI(EN) | -0.3 | | 6 | V | | 2 |
| Voltage range (OC) | VI(OC) | -0.3 | | 6 | V | | 2 |
| Operating virtual-junction temperature range | TJ | -55 | | 135 | °C | | 2 |
| Storage temperature range | Tstg | -65 | | 150 | °C | | 2 |
| Continuous power dissipation | | | | 182 | mW | at 125°C | 2 |
| Lead temperature, soldering | | | | 260 | °C | 1,6 mm (1/16 in) from case for 10 s | 2 |
| Electrostatic discharge protection, Human-Body Model (HBM) | | | | 2500 | V | HBM (H2) | 2 |
| Electrostatic discharge protection, Machine Model (MM) | | | | 50 | V | MM (M0) | 2 |
| Electrostatic discharge protection, Charged-Device Model (CDM) | | | | 1500 | V | CDM (C5) | 2 |
| Thermal resistance, junction-to-case | θJC | | 55 | | °C/W | | 2 |
| Static drain-source on-state resistance, 5-V or 3.3-V operation | rDS(on) | | 70 | 135 | mΩ | VI(IN) = 5 V or 3.3 V, IO = 0.5 A, -55°C ≤ TJ ≤ 125°C | 3 |
| Static drain-source on-state resistance, 2.7-V operation | rDS(on) | | 75 | 150 | mΩ | VI(IN) = 2.7 V, IO = 0.5 A, -55°C ≤ TJ ≤ 125°C | 3 |
| High-level input voltage (EN) | VIH | 2 | | | V | 2.7 V ≤ VI(IN) ≤ 5.5 V | 3 |
| Low-level input voltage (EN) | VIL | | | 0.8 | V | 2.7 V ≤ VI(IN) ≤ 5.5 V | 3 |
| Input current (EN) | II | -1 | | 1 | μA | VI(EN) = 0 V or 5.5 V | 3 |
| Short-circuit output current, TJ = 25°C | IOS | 0.65 | 1 | 1.3 | A | VI(IN) = 5 V, OUT connected to GND, TJ = 25°C | 3 |
| Short-circuit output current, device enabled into short-circuit | IOS | 0.45 | 1 | 1.55 | A | VI(IN) = 5 V, OUT connected to GND, device enabled into short-circuit, -55°C ≤ TJ ≤ 125°C | 3 |
| Supply current, low-level output, TJ = 25°C | | | 0.5 | 1 | μA | No load on OUT, TJ = 25°C, VI(EN) = 5.5 V or VI(EN) = 0 V | 3 |
| Supply current, low-level output, full temperature range | | | 0.5 | 5 | μA | VI(EN) = 5.5 V or VI(EN) = 0 V, -55°C ≤ TJ ≤ 125°C | 3 |
| Supply current, high-level output, TJ = 25°C | | | 43 | 60 | μA | No load on OUT, TJ = 25°C, VI(EN) = 0 V or VI(EN) = 5.5 V | 3 |
| Supply current, high-level output, full temperature range | | | 43 | 70 | μA | VI(EN) = 0 V or VI(EN) = 5.5 V, -55°C ≤ TJ ≤ 125°C | 3 |
| Leakage current | | | | 1 | μA | OUT connected to ground, -55°C ≤ TJ ≤ 125°C, VI(EN) = 5.5 V or VI(EN) = 0 V | 3 |
| Reverse leakage current | | | | 0 | μA | VI(OUT) = 5.5 V, IN = ground, TJ = 25°C | 3 |
| Low-level input voltage, IN (UVLO) | | 2 | | 2.5 | V | | 3 |
| Hysteresis, IN (UVLO) | | | 75 | | mV | TJ = 25°C | 3 |
| Output low voltage, VOL(/OC) | VOL(/OC) | | | 0.4 | V | IO(OC) = 5 mA | 3 |
| Off-state current (OC) | | | | 1 | μA | VO(OC) = 5 V or 3.3 V | 3 |
| OC deglitch | | 3 | 8 | 16 | ms | OC assertion or deassertion | 3 |
| Thermal shutdown threshold | | | 135 | | °C | | 3 |
| Recovery from thermal shutdown | | | 125 | | °C | | 3 |
| Thermal shutdown hysteresis | | | 10 | | °C | | 3 |
## CAD (KiCad official)
- Symbol: `TPS2041BMDBVTEP`
- Footprint: `Package_TO_SOT_SMD:SOT-23-5`
- 3D model: SOT-23-5 (KiCad packages3D, STEP)
- 3D model files: `tps2041bmdbvtep-etched.step` / `tps2041bmdbvtep-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `tps2041bmdbvtep.step` / `tps2041bmdbvtep.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Texas Instruments datasheet](https://www.ti.com/cn/lit/gpn/tps2041b-ep) (23 pp, sha256 `d830ee3c87946a62`, retrieved 2026-11-05, tier: manufacturer)
- **Datasheet language:** Chinese. Pin names, descriptions, and specs on this page were extracted and translated to English by ds2sf; the linked PDF is the manufacturer original.
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/tps2041bmdbvtep-datasheet.pdf)