component
TPM40NB8S8
Public Made by Adomby adom
TECH PUBLIC MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 17d ago |
| viewers | 17d ago |
| package.json | 17d ago |
| page.json | 17d ago |
| README.md | 17d ago |
| tpm40nb8s8-etched.glb | 17d ago |
| tpm40nb8s8-etched.step | 17d ago |
| tpm40nb8s8-hero.glb | 17d ago |
| tpm40nb8s8-hero.overlay.json | 17d ago |
| tpm40nb8s8.glb | 17d ago |
| tpm40nb8s8.kicad_mod | 17d ago |
| tpm40nb8s8.kicad_sym | 17d ago |
| tpm40nb8s8.lbr | 17d ago |
| tpm40nb8s8.step | 17d ago |
TPM40NB8S8
TECH PUBLIC · MOSFETs · SOP-8
TPM40NB8S8 from TECH PUBLIC, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | Source of MOSFET 1 (N-channel, VDS 40V, ID 8A). |
| 2 | G1 | input | Gate of MOSFET 1, rated for VGS ±20V with threshold 1.2 to 2.5V. |
| 3 | S2 | passive | Source of MOSFET 2 (N-channel, VDS 40V, ID 8A). |
| 4 | G2 | input | Gate of MOSFET 2, rated for VGS ±20V with threshold 1.2 to 2.5V. |
| 5 | D2 | passive | Drain of MOSFET 2, rated for 40V drain-source voltage. |
| 6 | D2 | passive | Drain of MOSFET 2, rated for 40V drain-source voltage (shorted to pin 5 externally). |
| 7 | D1 | passive | Drain of MOSFET 1, rated for 40V drain-source voltage. |
| 8 | D1 | passive | Drain of MOSFET 1, rated for 40V drain-source voltage (shorted to pin 7 externally). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | TECH PUBLIC |
| Package | SOP-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 40 | V | Tc=25°C unless otherwise noted | 1 | ||
| Gate-Source Voltage | VGS | -20 | 20 | V | Tc=25°C unless otherwise noted | 1 | |
| Drain Current - Continuous | ID | 8 | A | TA=25°C | 1 | ||
| Drain Current - Continuous | ID | 6.4 | A | TA=70°C | 1 | ||
| Drain Current - Pulsed | IDM | 32 | A | Tc=25°C unless otherwise noted | 1 | ||
| Single Pulse Avalanche Energy | EAS | 4.9 | mJ | Tc=25°C unless otherwise noted | 1 | ||
| Single Pulse Avalanche Current | IAS | 9.9 | A | Tc=25°C unless otherwise noted | 1 | ||
| Power Dissipation | PD | 2 | W | TA=25°C | 1 | ||
| Power Dissipation - Derate | PD | 0.016 | W/°C | Derate above 25°C | 1 | ||
| Storage Temperature Range | TSTG | -50 | 150 | °C | Tc=25°C unless otherwise noted | 1 | |
| Operating Junction Temperature Range | TJ | -50 | 150 | °C | Tc=25°C unless otherwise noted | 1 | |
| Drain-Source Breakdown Voltage | BVDSS | 40 | V | VGS=0V, ID=250uA | 2 | ||
| Drain-Source Leakage Current | IDSS | 1 | uA | VDS=40V, VGS=0V, TJ=25°C | 2 | ||
| Drain-Source Leakage Current | IDSS | 10 | uA | VDS=32V, VGS=0V, TJ=125°C | 2 | ||
| Gate-Source Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V, VDS=0V | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 20 | mΩ | VGS=10V, ID=8A | 2 | ||
| Static Drain-Source On-Resistance | RDS(ON) | 25 | mΩ | VGS=4.5V, ID=4A | 2 | ||
| Gate Threshold Voltage | VGS(th) | 1.2 | 1.6 | 2.5 | V | VGS=VDS, ID=250uA | 2 |
| Gate-Source Charge | Qgs | 1.6 | 3.2 | nC | VDS=32V, VGS=10V, ID=3A | 2 | |
| Gate-Drain Charge | Qgd | 3.3 | 6.6 | nC | VDS=32V, VGS=10V, ID=3A | 2 | |
| Turn-On Delay Time | Td(on) | 38 | 76 | ns | VDD=15V, VGS=10V, RG=3.3Ω, ID=1A | 2 | |
| Rise Time | Tr | 10.5 | 21 | ns | VDD=15V, VGS=10V, RG=3.3Ω, ID=1A | 2 | |
| Turn-Off Delay Time | Td(off) | 22.2 | 45 | ns | VDD=15V, VGS=10V, RG=3.3Ω, ID=1A | 2 | |
| Fall Time | Tf | 6.6 | 13.2 | ns | VDD=15V, VGS=10V, RG=3.3Ω, ID=1A | 2 | |
| Input Capacitance | Ciss | 724 | 1450 | pF | VDS=25V, VGS=0V, F=1MHz | 2 | |
| Output Capacitance | Coss | 70 | 140 | pF | VDS=25V, VGS=0V, F=1MHz | 2 | |
| Reverse Transfer Capacitance | Crss | 109 | 220 | pF | VDS=25V, VGS=0V, F=1MHz | 2 | |
| Continuous Source Current | IS | 8 | A | VG=VD=0V, Force Current | 2 | ||
| Pulsed Source Current | ISM | 16 | A | VG=VD=0V, Force Current | 2 | ||
| Diode Forward Voltage | VSD | 1 | V | VGS=0V, IS=1A, TJ=25°C | 2 |
CAD (KiCad official)
- Symbol:
TPM40NB8S8 - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files:
tpm40nb8s8-etched.step/tpm40nb8s8-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);tpm40nb8s8.step/tpm40nb8s8.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: TECH PUBLIC datasheet (4 pp, sha256
9057f44f1477b4e1, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).