component
TPH9R00CQH
Public Made by Adomby adom
TOSHIBA SEMICONDUCTOR AND STORAGE Global Sourcing Parts, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
main
123456789101112131415161718192021222324252627282930313233343536373839404142434445464748495051525354555657585960616263646566676869707172737475767778798081828384858687888990919293949596979899100101102103104105106107108109110111112113114115116117118119120121122123124125126127128129130131132133134135136137138139140141142143144145146147148149150151152153154155156157158159160161162163164165166167168169170171172173174175176177178179180181182183184185186187188189190191192193194195196197198199200201202203204205206207208209210211212213214215216217218219220221222223224225226227228229230231232233234235236237238239240241242243244245246247248249250251252253254255256257258259260261262263264265266267268269270271272273274275276277278279280281282283284285286287288289290291292293294295296297298299300301302303304305306307308309310311312313314315316317318319320321322323324325326327328329330331332333334335336337338339340341342343344345346347348349350351352353354355356357358359360361362363364365366367368369370371372373374375376377378379380381382383384385386387388389390391392393394395396397398399400401402403404405406407408409410411412413414415416417418419420421422423424425426427428429430431432433434435436437438439440441442443444445446447448449450451452453454455456457458459460461462463464465466467468469470471472473474475476477478479480481482483484485486487488489490491492493494495496497498499500501502503504505506507508509510511512513514515516517
{
"schema_version": 1,
"type": "component",
"slug": "tph9r00cqh",
"title": "TPH9R00CQH",
"brief": "TOSHIBA SEMICONDUCTOR AND STORAGE Global Sourcing Parts, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.",
"version": "0.1.0",
"license": "CC-BY-SA-4.0",
"tags": [
"component",
"global sourcing parts",
"tph9r00cqh",
"factory-2.0.0",
"extractor-text"
],
"component": {
"mpn": "TPH9R00CQH",
"manufacturer": "TOSHIBA SEMICONDUCTOR AND STORAGE",
"package": "SOP-8",
"pin_count": 8,
"category": "Global Sourcing Parts",
"subcategory": "Global Sourcing Parts",
"datasheet": "https://datasheet.lcsc.com/datasheet/pdf/c18bd04a96094bc699154b6b002cf58a.pdf",
"parts": {
"symbol": "tph9r00cqh.kicad_sym",
"footprint": "tph9r00cqh.kicad_mod",
"model_3d": "tph9r00cqh-hero.glb",
"model_3d_plain": "tph9r00cqh-etched.glb",
"model_3d_step": "tph9r00cqh-etched.step",
"model_3d_step_plain": "tph9r00cqh.step",
"lbr": "tph9r00cqh.lbr"
},
"distributor_links": {
"lcsc": "C6290267"
},
"distributor_check": {
"checked_at": "2026-10-28T22:10:57Z",
"source": "Component Ocean /api/assign-pns",
"digikey": {
"pn": null,
"status": "no match"
},
"mouser": {
"pn": null,
"status": "no match"
}
},
"pins": [
{
"number": "1",
"name": "Source",
"type": "passive",
"description": "Source terminal of the MOSFET; the datasheet lists pins 1, 2 and 3 as Source, with a gate-source voltage rating of ±20 V (VGSS)."
},
{
"number": "2",
"name": "Source",
"type": "passive",
"description": "Source terminal of the MOSFET, one of pins 1, 2 and 3 listed as Source, with a gate-source voltage rating of ±20 V (VGSS)."
},
{
"number": "3",
"name": "Source",
"type": "passive",
"description": "Source terminal of the MOSFET, one of pins 1, 2 and 3 listed as Source, with a gate-source voltage rating of ±20 V (VGSS)."
},
{
"number": "4",
"name": "Gate",
"type": "input",
"description": "Gate terminal of the MOSFET; the gate-source voltage rating is ±20 V (VGSS)."
},
{
"number": "5",
"name": "Drain",
"type": "passive",
"description": "Drain terminal of the MOSFET; the drain-source voltage rating is 150 V (VDSS)."
},
{
"number": "6",
"name": "Drain",
"type": "passive",
"description": "Drain terminal of the MOSFET; the drain-source voltage rating is 150 V (VDSS)."
},
{
"number": "7",
"name": "Drain",
"type": "passive",
"description": "Drain terminal of the MOSFET; the drain-source voltage rating is 150 V (VDSS)."
},
{
"number": "8",
"name": "Drain",
"type": "passive",
"description": "Drain terminal of the MOSFET; the drain-source voltage rating is 150 V (VDSS)."
}
],
"provenance": {
"extractor": "extract_pins 0.3",
"factory_chain": {
"factory": "2.0.0",
"extractor": "extract_pins 0.3",
"primary_model": "claude-haiku-5-5",
"primary_mode": "text",
"consensus_model": "claude-sonnet-5-5",
"consensus": "agreed",
"guards": "pin_guards 0.1: passed",
"guard_notes": [
"extractor flagged: The requested package hint is SOP-8, but the datasheet never uses the name SOP-8. It gives two 8-pin; The datasheet gives only the functional pin names (Source, Gate, Drain) and no pin-level electrical "
],
"pages_sent": 10,
"cost_usd": 0.0376,
"at": "2026-10-28T22:10:37"
},
"datasheet": {
"url": "https://datasheet.lcsc.com/datasheet/pdf/c18bd04a96094bc699154b6b002cf58a.pdf",
"pages": 10,
"sha256": "6c56948a378ef236",
"source_tier": "mfr"
},
"cad": "KiCad official (CC-BY-SA 4.0)",
"pins": {
"total": 8,
"described": 8,
"cites_pages": true,
"refuses_to_fabricate": true
}
},
"viewers": {
"symbol": "viewers/symbol.html",
"footprint": "viewers/footprint.html"
},
"models_3d": [
{
"file": "tph9r00cqh.step",
"role": "plain",
"up": "Z",
"units": "mm",
"origin": "footprint origin = pad-pattern centre",
"seat": "z = 0",
"extents_mm": [
6,
4.9,
1.75
],
"zmin_mm": 0,
"centre_offset_mm": 0,
"footprint_binding": "identity",
"sha256": "07f46cff378d30e6c27dfd5a03092c795323f86d91c71fc7e743f4f418dc553a",
"checked": "2026-10-28",
"checked_by": "factory/step_pose.py (Z-up, origin, seat, binding)"
},
{
"file": "tph9r00cqh-etched.step",
"role": "eda",
"up": "Z",
"units": "mm",
"origin": "footprint origin = pad-pattern centre",
"seat": "z = 0",
"extents_mm": [
6,
4.9,
1.75
],
"zmin_mm": 0,
"centre_offset_mm": 0,
"footprint_binding": "identity",
"sha256": "7d6dcee1b8664c7c1f5598ac5fc52b5d7c830cc9637b236ac96060833d8529cf",
"checked": "2026-10-28",
"checked_by": "factory/step_pose.py (Z-up, origin, seat, binding)"
}
]
},
"metadata": {
"specs": {
"Manufacturer": "TOSHIBA SEMICONDUCTOR AND STORAGE",
"Package": "SOP-8",
"Category": "Global Sourcing Parts",
"Pins": "8"
},
"characteristics": {
"version": 1,
"source": "datasheet",
"datasheet_sha256": "6c56948a378ef236c84412c291e198e9b6f2530dde06d91ac731c7d3985c9192",
"rows": [
{
"name": "Drain-source voltage",
"symbol": "VDSS",
"kind": "absolute_maximum",
"unit": "V",
"min": null,
"typ": null,
"max": 150,
"conditions": "",
"source_page": 2,
"source": "datasheet"
},
{
"name": "Gate-source voltage",
"symbol": "VGSS",
"kind": "absolute_maximum",
"unit": "V",
"min": -20,
"typ": null,
"max": 20,
"conditions": "",
"source_page": 2,
"source": "datasheet"
},
{
"name": "Drain current (DC)",
"symbol": "ID",
"kind": "absolute_maximum",
"unit": "A",
"min": null,
"typ": null,
"max": 64,
"conditions": "Tc = 25 °C",
"source_page": 2,
"source": "datasheet"
},
{
"name": "Drain current (DC)",
"symbol": "ID",
"kind": "absolute_maximum",
"unit": "A",
"min": null,
"typ": null,
"max": 108,
"conditions": "Silicon limit",
"source_page": 2,
"source": "datasheet"
},
{
"name": "Drain current (pulsed)",
"symbol": "IDP",
"kind": "absolute_maximum",
"unit": "A",
"min": null,
"typ": null,
"max": 320,
"conditions": "t = 100 µs",
"source_page": 2,
"source": "datasheet"
},
{
"name": "Single-pulse avalanche energy",
"symbol": "EAS",
"kind": "absolute_maximum",
"unit": "mJ",
"min": null,
"typ": null,
"max": 139,
"conditions": "Note 5: VDD = 60 V, Tch = 25 °C (initial), L = 47 µH, IAS = 64 A",
"source_page": 2,
"source": "datasheet"
},
{
"name": "Single-pulse avalanche current",
"symbol": "IAS",
"kind": "absolute_maximum",
"unit": "A",
"min": null,
"typ": null,
"max": 64,
"conditions": "Note 5: VDD = 60 V, Tch = 25 °C (initial), L = 47 µH",
"source_page": 2,
"source": "datasheet"
},
{
"name": "Channel temperature",
"symbol": "Tch",
"kind": "absolute_maximum",
"unit": "°C",
"min": null,
"typ": null,
"max": 175,
"conditions": "",
"source_page": 2,
"source": "datasheet"
},
{
"name": "Storage temperature",
"symbol": "Tstg",
"kind": "absolute_maximum",
"unit": "°C",
"min": -55,
"typ": null,
"max": 175,
"conditions": "",
"source_page": 2,
"source": "datasheet"
},
{
"name": "Channel-to-case thermal resistance",
"symbol": "Rth(ch-c)",
"kind": "thermal",
"unit": "°C/W",
"min": null,
"typ": null,
"max": 0.71,
"conditions": "Tc = 25 °C",
"source_page": 2,
"source": "datasheet"
},
{
"name": "Channel-to-ambient thermal resistance",
"symbol": "Rth(ch-a)",
"kind": "thermal",
"unit": "°C/W",
"min": null,
"typ": null,
"max": 50,
"conditions": "Ta = 25 °C, Note 3: glass-epoxy board (a), Figure 5.1",
"source_page": 2,
"source": "datasheet"
},
{
"name": "Channel-to-ambient thermal resistance",
"symbol": "Rth(ch-a)",
"kind": "thermal",
"unit": "°C/W",
"min": null,
"typ": null,
"max": 156,
"conditions": "Ta = 25 °C, Note 4: glass-epoxy board (b), Figure 5.2",
"source_page": 2,
"source": "datasheet"
},
{
"name": "Gate leakage current",
"symbol": "IGSS",
"kind": "electrical",
"unit": "µA",
"min": -0.1,
"typ": null,
"max": 0.1,
"conditions": "VGS = ±20 V, VDS = 0 V",
"source_page": 3,
"source": "datasheet"
},
{
"name": "Drain cut-off current",
"symbol": "IDSS",
"kind": "electrical",
"unit": "µA",
"min": null,
"typ": null,
"max": 10,
"conditions": "VDS = 150 V, VGS = 0 V",
"source_page": 3,
"source": "datasheet"
},
{
"name": "Drain-source breakdown voltage",
"symbol": "V(BR)DSS",
"kind": "electrical",
"unit": "V",
"min": 150,
"typ": null,
"max": null,
"conditions": "ID = 10 mA, VGS = 0 V",
"source_page": 3,
"source": "datasheet"
},
{
"name": "Drain-source breakdown voltage",
"symbol": "V(BR)DSX",
"kind": "electrical",
"unit": "V",
"min": 130,
"typ": null,
"max": null,
"conditions": "ID = 10 mA, VGS = -20 V",
"source_page": 3,
"source": "datasheet"
},
{
"name": "Gate threshold voltage",
"symbol": "Vth",
"kind": "electrical",
"unit": "V",
"min": 3.3,
"typ": null,
"max": 4.3,
"conditions": "VDS = 10 V, ID = 1.0 mA",
"source_page": 3,
"source": "datasheet"
},
{
"name": "Drain-source on-resistance",
"symbol": "RDS(ON)",
"kind": "electrical",
"unit": "mΩ",
"min": null,
"typ": 7.9,
"max": 11,
"conditions": "VGS = 8 V, ID = 22 A",
"source_page": 3,
"source": "datasheet"
},
{
"name": "Drain-source on-resistance",
"symbol": "RDS(ON)",
"kind": "electrical",
"unit": "mΩ",
"min": null,
"typ": 7.3,
"max": 9,
"conditions": "VGS = 10 V, ID = 32 A",
"source_page": 3,
"source": "datasheet"
},
{
"name": "Input capacitance",
"symbol": "Ciss",
"kind": "electrical",
"unit": "pF",
"min": null,
"typ": 3500,
"max": 5400,
"conditions": "VDS = 75 V, VGS = 0 V, f = 1 MHz",
"source_page": 3,
"source": "datasheet"
},
{
"name": "Reverse transfer capacitance",
"symbol": "Crss",
"kind": "electrical",
"unit": "pF",
"min": null,
"typ": 19,
"max": 52,
"conditions": "VDS = 75 V, VGS = 0 V, f = 1 MHz",
"source_page": 3,
"source": "datasheet"
},
{
"name": "Gate resistance",
"symbol": "rg",
"kind": "electrical",
"unit": "Ω",
"min": null,
"typ": 1.3,
"max": 2,
"conditions": "",
"source_page": 3,
"source": "datasheet"
},
{
"name": "Reverse drain current (pulsed)",
"symbol": "IDRP",
"kind": "absolute_maximum",
"unit": "A",
"min": null,
"typ": null,
"max": 320,
"conditions": "t = 100 µs",
"source_page": 4,
"source": "datasheet"
},
{
"name": "Diode forward voltage",
"symbol": "VDSF",
"kind": "electrical",
"unit": "V",
"min": null,
"typ": null,
"max": -1.2,
"conditions": "IDR = 32 A, VGS = 0 V",
"source_page": 4,
"source": "datasheet"
}
]
}
},
"variants": [],
"sections": [
"hero",
"viewers",
"readme",
"breadcrumbs",
"info"
],
"discovery_triggers": [
"tph9r00cqh"
],
"discovery_pitch": "TPH9R00CQH (TOSHIBA SEMICONDUCTOR AND STORAGE) component page: datasheet pinout, KiCad symbol, footprint and 3D.",
"author": {
"name": "Ray",
"email": "[email protected]"
},
"dependencies": {},
"hero": {
"type": "image",
"path": "docs/hero.png"
},
"files": [
"page.json",
"README.md",
"tph9r00cqh.kicad_sym",
"tph9r00cqh.kicad_mod",
"tph9r00cqh.glb",
"tph9r00cqh.step",
"tph9r00cqh.lbr",
"docs/hero.png",
"docs/tph9r00cqh-datasheet.pdf",
"viewers/symbol.html",
"viewers/footprint.html",
"tph9r00cqh-hero.glb",
"tph9r00cqh-hero.overlay.json",
"tph9r00cqh-etched.glb"
],
"visibility": {
"public": true
}
}