# TPD65R950M

**WUXI UNIGROUP MICRO** · MOSFETs · TO-252

TPD65R950M from WUXI UNIGROUP MICRO, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; drives the MOSFET with a rated gate-source voltage of ±30 V (VGSS) and threshold of 2.5 to 4.0 V at 250 µA. |
| 2 | D | passive | Drain (middle lead, electrically common with the mounting tab); drain-source breakdown is 650 V minimum and continuous drain current is 4.5 A at TC = 25 ºC. |
| 3 | S | passive | Source; continuous body-diode forward current is 3.8 A and pulsed diode current is 13.5 A. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | WUXI UNIGROUP MICRO |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | V(BR)DSS | 650 |  |  | V | VGS = 0V, ID = 250µA | 3 |
| Zero Gate Voltage Drain Current (TJ = 25ºC) | IDSS |  |  | 1 | μA | VDS = 650V, VGS = 0V, TJ = 25ºC | 3 |
| Zero Gate Voltage Drain Current (TJ = 150ºC) | IDSS |  |  | 100 | μA | VDS = 650V, VGS = 0V, TJ = 150ºC | 3 |
| Gate-Source Leakage Current | IGSS | -1 |  | 1 | μA | VGS = ±20V | 3 |
| Gate-Source Threshold Voltage | VGS(th) | 2.5 |  | 4 | V | VDS = VGS, ID = 250µA | 3 |
| Drain-Source On-State Resistance | RDS(on) |  | 0.87 | 0.95 | Ω | VGS = 10V, ID = 2A | 3 |
| Body Diode Forward Voltage | VSD |  | 0.9 | 1.2 | V | TJ = 25ºC, ISD = 2A, VGS = 0V | 3 |
| Continuous Drain Current (TC = 25ºC) | ID |  |  | 4.5 | A | TC = 25ºC, unless otherwise noted | 2 |
| Continuous Drain Current (TC = 100ºC) | ID |  |  | 2.7 | A | TC = 100ºC | 2 |
| Pulsed Drain Current (note1) | ID,pulse |  |  | 13.5 | A | TC = 25ºC, unless otherwise noted | 2 |
| Gate-Source Voltage | VGSS | -30 |  | 30 | V | TC = 25ºC, unless otherwise noted | 2 |
| Single Pulse Avalanche Energy (note2) | EAS |  |  | 50 | mJ | TC = 25ºC, unless otherwise noted | 2 |
| Repetitive Avalanche Energy (note2) | EAR |  |  | 0.15 | mJ | TC = 25ºC, unless otherwise noted | 2 |
| Avalanche Current | IAR |  |  | 1 | A | TC = 25ºC, unless otherwise noted | 2 |
| MOSFET dv/dt Ruggedness | dv/dt |  |  | 50 | V/ns | VDS = 0...480V | 2 |
| Power Dissipation For TO-252 | PD |  |  | 37 | W | TC = 25ºC, unless otherwise noted | 2 |
| Continuous Diode Forward Current | IS |  |  | 3.8 | A | TC = 25ºC, unless otherwise noted | 2 |
| Diode Pulsed Current (note1) | IS,pulse |  |  | 13.5 | A | TC = 25ºC, unless otherwise noted | 2 |
| Reverse Diode dv/dt (note3) | dv/dt |  |  | 15 | V/ns | TC = 25ºC, unless otherwise noted | 2 |
| Maximum Diode Commutation Speed (note3) | diF/dt |  |  | 500 | A/μs | TC = 25ºC, unless otherwise noted | 2 |
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 |  | 150 | ºC | TC = 25ºC, unless otherwise noted | 2 |
| Thermal Resistance, Junction-to-Case (TO-252) | RthJC |  |  | 3.4 | ºC/W |  | 2 |
| Thermal Resistance, Junction-to-Ambient (TO-252) | RthJA |  |  | 62 | ºC/W |  | 2 |
| Gate Resistance | RG |  | 5 |  | Ω | f = 1.0MHz open drain | 3 |
| Input Capacitance | Ciss |  | 320 |  | pF | VGS = 0V, VDS = 100V, f = 1.0MHz | 3 |
| Output Capacitance | Coss |  | 18 |  | pF |  | 3 |
| Reverse Transfer Capacitance | Crss |  | 2.1 |  | pF |  | 3 |
| Total Gate Charge | Qg |  | 9.6 |  | nC | VDD = 520V, ID = 4.5A, VGS = 10V | 3 |
| Gate-Source Charge | Qgs |  | 1.9 |  | nC |  | 3 |
| Gate-Drain Charge | Qgd |  | 4.3 |  | nC |  | 3 |
| Turn-on Delay Time | td(on) |  | 54 |  | ns | VDD = 400V, ID = 4.5A, RG = 25Ω | 3 |
| Turn-on Rise Time | tr |  | 62 |  | ns |  | 3 |
| Turn-off Delay Time | td(off) |  | 86 |  | ns |  | 3 |
| Turn-off Fall Time | tf |  | 51 |  | ns |  | 3 |
| Reverse Recovery Time | trr |  | 271 |  | ns | VR = 400V, IF = 4.5A, diF/dt = 100A/μs | 3 |
| Reverse Recovery Charge | Qrr |  | 3.1 |  | μC |  | 3 |
| Peak Reverse Recovery Current | Irrm |  | 23 |  | A |  | 3 |

## CAD (KiCad official)

- Symbol: `TPD65R950M`
- Footprint: `Package_TO_SOT_SMD:TO-252-2`
- 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files: `tpd65r950m-etched.step` / `tpd65r950m-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `tpd65r950m.step` / `tpd65r950m.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [WUXI UNIGROUP MICRO datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588917357209669632) (11 pp, sha256 `c0249e2b415972e8`, retrieved 2026-10-17, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/tpd65r950m-datasheet.pdf)