component
TPD65R950M
Public Made by Adomby adom
WUXI UNIGROUP MICRO MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownTPD65R950M
WUXI UNIGROUP MICRO · MOSFETs · TO-252
TPD65R950M from WUXI UNIGROUP MICRO, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; drives the MOSFET with a rated gate-source voltage of ±30 V (VGSS) and threshold of 2.5 to 4.0 V at 250 µA. |
| 2 | D | passive | Drain (middle lead, electrically common with the mounting tab); drain-source breakdown is 650 V minimum and continuous drain current is 4.5 A at TC = 25 ºC. |
| 3 | S | passive | Source; continuous body-diode forward current is 3.8 A and pulsed diode current is 13.5 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | WUXI UNIGROUP MICRO |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | V(BR)DSS | 650 | V | VGS = 0V, ID = 250µA | 3 | ||
| Zero Gate Voltage Drain Current (TJ = 25ºC) | IDSS | 1 | μA | VDS = 650V, VGS = 0V, TJ = 25ºC | 3 | ||
| Zero Gate Voltage Drain Current (TJ = 150ºC) | IDSS | 100 | μA | VDS = 650V, VGS = 0V, TJ = 150ºC | 3 | ||
| Gate-Source Leakage Current | IGSS | -1 | 1 | μA | VGS = ±20V | 3 | |
| Gate-Source Threshold Voltage | VGS(th) | 2.5 | 4 | V | VDS = VGS, ID = 250µA | 3 | |
| Drain-Source On-State Resistance | RDS(on) | 0.87 | 0.95 | Ω | VGS = 10V, ID = 2A | 3 | |
| Body Diode Forward Voltage | VSD | 0.9 | 1.2 | V | TJ = 25ºC, ISD = 2A, VGS = 0V | 3 | |
| Continuous Drain Current (TC = 25ºC) | ID | 4.5 | A | TC = 25ºC, unless otherwise noted | 2 | ||
| Continuous Drain Current (TC = 100ºC) | ID | 2.7 | A | TC = 100ºC | 2 | ||
| Pulsed Drain Current (note1) | ID,pulse | 13.5 | A | TC = 25ºC, unless otherwise noted | 2 | ||
| Gate-Source Voltage | VGSS | -30 | 30 | V | TC = 25ºC, unless otherwise noted | 2 | |
| Single Pulse Avalanche Energy (note2) | EAS | 50 | mJ | TC = 25ºC, unless otherwise noted | 2 | ||
| Repetitive Avalanche Energy (note2) | EAR | 0.15 | mJ | TC = 25ºC, unless otherwise noted | 2 | ||
| Avalanche Current | IAR | 1 | A | TC = 25ºC, unless otherwise noted | 2 | ||
| MOSFET dv/dt Ruggedness | dv/dt | 50 | V/ns | VDS = 0...480V | 2 | ||
| Power Dissipation For TO-252 | PD | 37 | W | TC = 25ºC, unless otherwise noted | 2 | ||
| Continuous Diode Forward Current | IS | 3.8 | A | TC = 25ºC, unless otherwise noted | 2 | ||
| Diode Pulsed Current (note1) | IS,pulse | 13.5 | A | TC = 25ºC, unless otherwise noted | 2 | ||
| Reverse Diode dv/dt (note3) | dv/dt | 15 | V/ns | TC = 25ºC, unless otherwise noted | 2 | ||
| Maximum Diode Commutation Speed (note3) | diF/dt | 500 | A/μs | TC = 25ºC, unless otherwise noted | 2 | ||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | 150 | ºC | TC = 25ºC, unless otherwise noted | 2 | |
| Thermal Resistance, Junction-to-Case (TO-252) | RthJC | 3.4 | ºC/W | 2 | |||
| Thermal Resistance, Junction-to-Ambient (TO-252) | RthJA | 62 | ºC/W | 2 | |||
| Gate Resistance | RG | 5 | Ω | f = 1.0MHz open drain | 3 | ||
| Input Capacitance | Ciss | 320 | pF | VGS = 0V, VDS = 100V, f = 1.0MHz | 3 | ||
| Output Capacitance | Coss | 18 | pF | 3 | |||
| Reverse Transfer Capacitance | Crss | 2.1 | pF | 3 | |||
| Total Gate Charge | Qg | 9.6 | nC | VDD = 520V, ID = 4.5A, VGS = 10V | 3 | ||
| Gate-Source Charge | Qgs | 1.9 | nC | 3 | |||
| Gate-Drain Charge | Qgd | 4.3 | nC | 3 | |||
| Turn-on Delay Time | td(on) | 54 | ns | VDD = 400V, ID = 4.5A, RG = 25Ω | 3 | ||
| Turn-on Rise Time | tr | 62 | ns | 3 | |||
| Turn-off Delay Time | td(off) | 86 | ns | 3 | |||
| Turn-off Fall Time | tf | 51 | ns | 3 | |||
| Reverse Recovery Time | trr | 271 | ns | VR = 400V, IF = 4.5A, diF/dt = 100A/μs | 3 | ||
| Reverse Recovery Charge | Qrr | 3.1 | μC | 3 | |||
| Peak Reverse Recovery Current | Irrm | 23 | A | 3 |
CAD (KiCad official)
- Symbol:
TPD65R950M - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
tpd65r950m-etched.step/tpd65r950m-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);tpd65r950m.step/tpd65r950m.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: WUXI UNIGROUP MICRO datasheet (11 pp, sha256
c0249e2b415972e8, retrieved 2026-10-17, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).