component
TPC8132
Public Made by Adomby adom
TOSHIBA MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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TPC8132
TOSHIBA · MOSFETs · SOP-8
TPC8132 from TOSHIBA, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source terminal of the P-channel MOSFET; the device drain-source voltage rating is VDSS = -40 V and continuous drain current is ID = -7 A (DC). |
| 2 | S | passive | Source terminal of the P-channel MOSFET; the device drain-source voltage rating is VDSS = -40 V and continuous drain current is ID = -7 A (DC). |
| 3 | S | passive | Source terminal of the P-channel MOSFET; the device drain-source voltage rating is VDSS = -40 V and continuous drain current is ID = -7 A (DC). |
| 4 | G | input | Gate terminal; the gate-source voltage rating is VGSS = -25 V / +20 V. |
| 5 | Drain | passive | Drain terminal of the P-channel MOSFET; the drain-source voltage rating is VDSS = -40 V and pulsed drain current is IDP = -28 A. |
| 6 | Drain | passive | Drain terminal of the P-channel MOSFET; the drain-source voltage rating is VDSS = -40 V and pulsed drain current is IDP = -28 A. |
| 7 | Drain | passive | Drain terminal of the P-channel MOSFET; the drain-source voltage rating is VDSS = -40 V and pulsed drain current is IDP = -28 A. |
| 8 | Drain | passive | Drain terminal of the P-channel MOSFET; the drain-source voltage rating is VDSS = -40 V and pulsed drain current is IDP = -28 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | TOSHIBA |
| Package | SOP-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Gate leakage current | IGSS | -0.1 | 0.1 | µA | VGS = ±20 V, VDS = 0 V | 3 | |
| Drain cut-off current | IDSS | -10 | µA | VDS = -40 V, VGS = 0 V | 3 | ||
| Drain-source breakdown voltage | V(BR)DSS | -40 | V | ID = -10 mA, VGS = 0 V | 3 | ||
| Drain-source breakdown voltage (VGS = 10 V) | V(BR)DSX | -30 | V | ID = -10 mA, VGS = 10 V | 3 | ||
| Gate threshold voltage | Vth | -0.8 | -2 | V | VDS = -10 V, ID = -0.2 mA | 3 | |
| Drain-source on-resistance (VGS = -4.5 V) | RDS(ON) | 25 | 33 | mΩ | VGS = -4.5 V, ID = -3.5 A | 3 | |
| Drain-source on-resistance (VGS = -10 V) | RDS(ON) | 20 | 25 | mΩ | VGS = -10 V, ID = -3.5 A | 3 | |
| Reverse drain current (pulsed) | IDRP | -28 | A | 3 | |||
| Diode forward voltage | VDSF | 1.2 | V | IDR = -7 A, VGS = 0 V | 3 | ||
| Drain-source voltage | VDSS | -40 | V | 1 | |||
| Gate-source voltage | VGSS | -25 | 20 | V | 1 | ||
| Drain current (DC) | ID | -7 | A | 1 | |||
| Drain current (pulsed) | IDP | -28 | A | 1 | |||
| Power dissipation | PD | 1.9 | W | t = 10 s (Note 2) | 1 | ||
| Power dissipation | PD | 1 | W | Note 3 | 1 | ||
| Single-pulse avalanche energy | EAS | 22 | mJ | Note 4: VDD = -24 V, Tch = 25 °C (initial), L = 0.5 mH, RG = 25 Ω, IAR = -7 A | 1 | ||
| Avalanche current | IAR | -7 | A | 1 | |||
| Channel temperature | Tch | 150 | °C | 1 | |||
| Storage temperature | Tstg | -55 | 150 | °C | 1 | ||
| Channel-to-ambient thermal resistance | Rth(ch-a) | 65.7 | /W | t = 10 s (Note 2, glass-epoxy board a) | 2 | ||
| Channel-to-ambient thermal resistance | Rth(ch-a) | 125 | /W | Note 3, glass-epoxy board b | 2 |
CAD (KiCad official)
- Symbol:
TPC8132 - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files:
tpc8132-etched.step/tpc8132-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);tpc8132.step/tpc8132.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: TOSHIBA datasheet (9 pp, sha256
f387f5dbc1981458, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# TPC8132
**TOSHIBA** · MOSFETs · SOP-8
TPC8132 from TOSHIBA, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source terminal of the P-channel MOSFET; the device drain-source voltage rating is VDSS = -40 V and continuous drain current is ID = -7 A (DC). |
| 2 | S | passive | Source terminal of the P-channel MOSFET; the device drain-source voltage rating is VDSS = -40 V and continuous drain current is ID = -7 A (DC). |
| 3 | S | passive | Source terminal of the P-channel MOSFET; the device drain-source voltage rating is VDSS = -40 V and continuous drain current is ID = -7 A (DC). |
| 4 | G | input | Gate terminal; the gate-source voltage rating is VGSS = -25 V / +20 V. |
| 5 | Drain | passive | Drain terminal of the P-channel MOSFET; the drain-source voltage rating is VDSS = -40 V and pulsed drain current is IDP = -28 A. |
| 6 | Drain | passive | Drain terminal of the P-channel MOSFET; the drain-source voltage rating is VDSS = -40 V and pulsed drain current is IDP = -28 A. |
| 7 | Drain | passive | Drain terminal of the P-channel MOSFET; the drain-source voltage rating is VDSS = -40 V and pulsed drain current is IDP = -28 A. |
| 8 | Drain | passive | Drain terminal of the P-channel MOSFET; the drain-source voltage rating is VDSS = -40 V and pulsed drain current is IDP = -28 A. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | TOSHIBA |
| Package | SOP-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Gate leakage current | IGSS | -0.1 | | 0.1 | µA | VGS = ±20 V, VDS = 0 V | 3 |
| Drain cut-off current | IDSS | | | -10 | µA | VDS = -40 V, VGS = 0 V | 3 |
| Drain-source breakdown voltage | V(BR)DSS | -40 | | | V | ID = -10 mA, VGS = 0 V | 3 |
| Drain-source breakdown voltage (VGS = 10 V) | V(BR)DSX | -30 | | | V | ID = -10 mA, VGS = 10 V | 3 |
| Gate threshold voltage | Vth | -0.8 | | -2 | V | VDS = -10 V, ID = -0.2 mA | 3 |
| Drain-source on-resistance (VGS = -4.5 V) | RDS(ON) | | 25 | 33 | mΩ | VGS = -4.5 V, ID = -3.5 A | 3 |
| Drain-source on-resistance (VGS = -10 V) | RDS(ON) | | 20 | 25 | mΩ | VGS = -10 V, ID = -3.5 A | 3 |
| Reverse drain current (pulsed) | IDRP | | | -28 | A | | 3 |
| Diode forward voltage | VDSF | | | 1.2 | V | IDR = -7 A, VGS = 0 V | 3 |
| Drain-source voltage | VDSS | -40 | | | V | | 1 |
| Gate-source voltage | VGSS | -25 | | 20 | V | | 1 |
| Drain current (DC) | ID | -7 | | | A | | 1 |
| Drain current (pulsed) | IDP | -28 | | | A | | 1 |
| Power dissipation | PD | | | 1.9 | W | t = 10 s (Note 2) | 1 |
| Power dissipation | PD | | | 1 | W | Note 3 | 1 |
| Single-pulse avalanche energy | EAS | | | 22 | mJ | Note 4: VDD = -24 V, Tch = 25 °C (initial), L = 0.5 mH, RG = 25 Ω, IAR = -7 A | 1 |
| Avalanche current | IAR | -7 | | | A | | 1 |
| Channel temperature | Tch | | | 150 | °C | | 1 |
| Storage temperature | Tstg | -55 | | 150 | °C | | 1 |
| Channel-to-ambient thermal resistance | Rth(ch-a) | | | 65.7 | /W | t = 10 s (Note 2, glass-epoxy board a) | 2 |
| Channel-to-ambient thermal resistance | Rth(ch-a) | | | 125 | /W | Note 3, glass-epoxy board b | 2 |
## CAD (KiCad official)
- Symbol: `TPC8132`
- Footprint: `Package_SO:SOIC-8_3.9x4.9mm_P1.27mm`
- 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files: `tpc8132-etched.step` / `tpc8132-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `tpc8132.step` / `tpc8132.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [TOSHIBA datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8602950219743318016) (9 pp, sha256 `f387f5dbc1981458`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/tpc8132-datasheet.pdf)