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TPC8132

Public Made by Adom

by adom

TOSHIBA MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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TPC8132

TOSHIBA · MOSFETs · SOP-8

TPC8132 from TOSHIBA, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S passive Source terminal of the P-channel MOSFET; the device drain-source voltage rating is VDSS = -40 V and continuous drain current is ID = -7 A (DC).
2 S passive Source terminal of the P-channel MOSFET; the device drain-source voltage rating is VDSS = -40 V and continuous drain current is ID = -7 A (DC).
3 S passive Source terminal of the P-channel MOSFET; the device drain-source voltage rating is VDSS = -40 V and continuous drain current is ID = -7 A (DC).
4 G input Gate terminal; the gate-source voltage rating is VGSS = -25 V / +20 V.
5 Drain passive Drain terminal of the P-channel MOSFET; the drain-source voltage rating is VDSS = -40 V and pulsed drain current is IDP = -28 A.
6 Drain passive Drain terminal of the P-channel MOSFET; the drain-source voltage rating is VDSS = -40 V and pulsed drain current is IDP = -28 A.
7 Drain passive Drain terminal of the P-channel MOSFET; the drain-source voltage rating is VDSS = -40 V and pulsed drain current is IDP = -28 A.
8 Drain passive Drain terminal of the P-channel MOSFET; the drain-source voltage rating is VDSS = -40 V and pulsed drain current is IDP = -28 A.

Key specifications

Parameter Value
Manufacturer TOSHIBA
Package SOP-8
Category Transistors/Thyristors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Gate leakage current IGSS -0.1 0.1 µA VGS = ±20 V, VDS = 0 V 3
Drain cut-off current IDSS -10 µA VDS = -40 V, VGS = 0 V 3
Drain-source breakdown voltage V(BR)DSS -40 V ID = -10 mA, VGS = 0 V 3
Drain-source breakdown voltage (VGS = 10 V) V(BR)DSX -30 V ID = -10 mA, VGS = 10 V 3
Gate threshold voltage Vth -0.8 -2 V VDS = -10 V, ID = -0.2 mA 3
Drain-source on-resistance (VGS = -4.5 V) RDS(ON) 25 33 mΩ VGS = -4.5 V, ID = -3.5 A 3
Drain-source on-resistance (VGS = -10 V) RDS(ON) 20 25 mΩ VGS = -10 V, ID = -3.5 A 3
Reverse drain current (pulsed) IDRP -28 A 3
Diode forward voltage VDSF 1.2 V IDR = -7 A, VGS = 0 V 3
Drain-source voltage VDSS -40 V 1
Gate-source voltage VGSS -25 20 V 1
Drain current (DC) ID -7 A 1
Drain current (pulsed) IDP -28 A 1
Power dissipation PD 1.9 W t = 10 s (Note 2) 1
Power dissipation PD 1 W Note 3 1
Single-pulse avalanche energy EAS 22 mJ Note 4: VDD = -24 V, Tch = 25 °C (initial), L = 0.5 mH, RG = 25 Ω, IAR = -7 A 1
Avalanche current IAR -7 A 1
Channel temperature Tch 150 °C 1
Storage temperature Tstg -55 150 °C 1
Channel-to-ambient thermal resistance Rth(ch-a) 65.7 /W t = 10 s (Note 2, glass-epoxy board a) 2
Channel-to-ambient thermal resistance Rth(ch-a) 125 /W Note 3, glass-epoxy board b 2

CAD (KiCad official)

  • Symbol: TPC8132
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOP-8 (KiCad packages3D, STEP)
  • 3D model files: tpc8132-etched.step / tpc8132-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); tpc8132.step / tpc8132.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: TOSHIBA datasheet (9 pp, sha256 f387f5dbc1981458, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF