component

TP0604N3-G

Public Made by Adom

by adom

Microchip Tech MOSFETs, TO-92-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttriode-mos tube-transistortp0604n3-gfactory-2.0.0extractor-text

Verified TP0604N3-G

by Ray · last 2 Nov 2026 · 1 record · files match
SymbolFootprint3D modelPins

Verification log 1 record

2 Nov 2026RayPublished by the parts factory: tier mfr, 3 pinsfiles match
SymbolFootprint3D modelPinsfor all variants
  • ✓component-page-verify: PASS
  • ✓cad_props: Datasheet, MPN and distributor properties match page.json
  • ✓component: TP0604N3-G · TO-92-3 · 3 pins
  • ✓copper: 3 copper pads, none touching another net
  • ✓datasheet: all 3 pin names found in the 14-page datasheet
  • ✓distributor: lcsc C632585, digikey TP0604N3-G-ND, mouser 689-TP0604N3-G
  • ✓family: TO-92_Inline
  • ✓files: 7 declared files present
  • ✓hero: docs/hero.png 4000x2500
  • ✓lbr: OK: /tmp/cpv-vuwto9xh/x.lbr is a valid EAGLE .lbr with complete deviceset
  • ✓license: CC-BY-SA-4.0
  • ✓models_3d: 2 records
  • •package_fit (skip): no component.package_dims on the page: the model is unchecked against the datasheet drawing
  • ✓pads: 3 pins = 3 pads
  • ✓pose: 2 STEP(s) Z-up, seated, centred
  • ✓symbol: 3 pins agree
  • ✓visibility: public, source open
Evidencedatasheet
Verified files✓ tp0604n3-g.kicad_sym✓ tp0604n3-g.kicad_mod✓ tp0604n3-g.step
Spot something wrong? Report it as an issue Propose a fix Records are signed by members of adom.
Overview Files Discover Packages Releases Dependencies Issues Breadcrumbs Pull Requests Activity
main
tp0604n3-g / README.md
History Download
Ray Publish 0.1.0 a548ae1 4d ago

TP0604N3-G

Microchip Tech · MOSFETs · TO-92-3

TP0604N3-G from Microchip Tech, in a TO-92-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Source passive Source terminal of the P-channel enhancement-mode DMOS FET, whose drain-to-source breakdown voltage BVDSS is rated -40 V minimum.
2 Gate input Gate terminal with gate threshold VGS(th) between -1 V and -2.4 V and gate-to-source voltage rated ±20 V.
3 Drain passive Drain terminal with continuous drain current ID of -0.43 A and drain-to-source breakdown voltage BVDSS of -40 V minimum.

Key specifications

Parameter Value
Manufacturer Microchip Tech
Package TO-92-3
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-to-Source Breakdown Voltage BVDSS -40 V VGS = 0V, ID = -2 mA 2
Gate Threshold Voltage VGS(th) -1 -2.4 V VGS = VDS, ID= -1 mA 2
Change in VGS(th) with Temperature ΔVGS(th) -3 -4.5 mV/°C VGS = VDS, ID= -1 mA (Note 1) 2
Gate Body Leakage Current IGSS -100 nA VGS = ± 20V, VDS = 0V 2
Zero-Gate Voltage Drain Current IDSS -10 µA VGS = 0V, VDS = Maximum rating 2
Zero-Gate Voltage Drain Current at 125°C IDSS -1 mA VDS = 0.8 Maximum rating, VGS = 0V, TA = 125°C (Note 1) 2
On-State Drain Current ID(ON) -0.4 -0.6 A VGS = -5V, VDS = -20V 2
On-State Drain Current ID(ON) -2 -3.3 A VGS = -10V, VDS = -20V 2
Static Drain-to-Source On-State Resistance RDS(ON) 2 3.5 Ω VGS = -5V, ID = -250 mA 2
Static Drain-to-Source On-State Resistance RDS(ON) 1.5 2 Ω VGS = -10V, ID = -1A 2
Change in RDS(ON) with Temperature ΔRDS(ON) 1.2 %/°C VGS = -10V, ID = -1A (Note 1) 2
Forward Transconductance GFS 400 600 mmho VDS = -20V, ID = -1A 3
Input Capacitance CISS 95 150 pF VGS = 0V, VDS = -20V, f = 1 MHz 3
Common Source Output Capacitance COSS 85 120 pF 3
Reverse Transfer Capacitance CRSS 35 60 pF 3
Turn-On Delay Time td(ON) 5 8 ns VDD = -20V, ID = -1A, RGEN = 25Ω 3
Rise Time tr 7 18 ns VDD = -20V, ID = -1A, RGEN = 25Ω 3
Turn-Off Delay Time td(OFF) 10 15 ns VDD = -20V, ID = -1A, RGEN = 25Ω 3
Fall Time tf 6 19 ns VDD = -20V, ID = -1A, RGEN = 25Ω 3
Diode Forward Voltage Drop VSD -1.3 -2 V VGS = 0V, ISD = -1.5A (Note 1) 3
Operating Ambient Temperature TA -55 150 °C 2
Storage Temperature TS -55 150 °C 2
Gate-to-Source Voltage VGS -20 20 V 2
Operating Ambient Temperature TA -55 150 °C 3
Storage Temperature TS -55 150 °C 3
Reverse Recovery Time trr 300 ns VGS = 0V, ISD = -1.5A 3
Thermal Resistance, Junction to Ambient (3-lead TO-92) JA 132 °C/W 3
Continuous Drain Current ID -0.43 A Continuous (Note 1: limited by maximum rated TJ) 3
Power Dissipation at TA = 25°C PD 0.74 W TA = 25°C 3
Repetitive Peak Drain Current IDRM -4.2 A 3

CAD (KiCad official)

  • Symbol: TP0604N3-G
  • Footprint: Package_TO_SOT_THT:TO-92_Inline
  • 3D model: TO-92-3 (KiCad packages3D, STEP)
  • 3D model files: tp0604n3-g-etched.step / tp0604n3-g-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); tp0604n3-g.step / tp0604n3-g.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Microchip Tech datasheet (14 pp, sha256 84059a1b422ad6c0, retrieved 2026-11-02, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF