component
TP0604N3-G
Public Made by Adomby adom
Microchip Tech MOSFETs, TO-92-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Made with KiCad 10.0 · needs KiCad 10.0 or later to open · KiCad file format 20260206
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TP0604N3-G
Microchip Tech · MOSFETs · TO-92-3
TP0604N3-G from Microchip Tech, in a TO-92-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Source | passive | Source terminal of the P-channel enhancement-mode DMOS FET, whose drain-to-source breakdown voltage BVDSS is rated -40 V minimum. |
| 2 | Gate | input | Gate terminal with gate threshold VGS(th) between -1 V and -2.4 V and gate-to-source voltage rated ±20 V. |
| 3 | Drain | passive | Drain terminal with continuous drain current ID of -0.43 A and drain-to-source breakdown voltage BVDSS of -40 V minimum. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Microchip Tech |
| Package | TO-92-3 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-to-Source Breakdown Voltage | BVDSS | -40 | V | VGS = 0V, ID = -2 mA | 2 | ||
| Gate Threshold Voltage | VGS(th) | -1 | -2.4 | V | VGS = VDS, ID= -1 mA | 2 | |
| Change in VGS(th) with Temperature | ΔVGS(th) | -3 | -4.5 | mV/°C | VGS = VDS, ID= -1 mA (Note 1) | 2 | |
| Gate Body Leakage Current | IGSS | -100 | nA | VGS = ± 20V, VDS = 0V | 2 | ||
| Zero-Gate Voltage Drain Current | IDSS | -10 | µA | VGS = 0V, VDS = Maximum rating | 2 | ||
| Zero-Gate Voltage Drain Current at 125°C | IDSS | -1 | mA | VDS = 0.8 Maximum rating, VGS = 0V, TA = 125°C (Note 1) | 2 | ||
| On-State Drain Current | ID(ON) | -0.4 | -0.6 | A | VGS = -5V, VDS = -20V | 2 | |
| On-State Drain Current | ID(ON) | -2 | -3.3 | A | VGS = -10V, VDS = -20V | 2 | |
| Static Drain-to-Source On-State Resistance | RDS(ON) | 2 | 3.5 | Ω | VGS = -5V, ID = -250 mA | 2 | |
| Static Drain-to-Source On-State Resistance | RDS(ON) | 1.5 | 2 | Ω | VGS = -10V, ID = -1A | 2 | |
| Change in RDS(ON) with Temperature | ΔRDS(ON) | 1.2 | %/°C | VGS = -10V, ID = -1A (Note 1) | 2 | ||
| Forward Transconductance | GFS | 400 | 600 | mmho | VDS = -20V, ID = -1A | 3 | |
| Input Capacitance | CISS | 95 | 150 | pF | VGS = 0V, VDS = -20V, f = 1 MHz | 3 | |
| Common Source Output Capacitance | COSS | 85 | 120 | pF | 3 | ||
| Reverse Transfer Capacitance | CRSS | 35 | 60 | pF | 3 | ||
| Turn-On Delay Time | td(ON) | 5 | 8 | ns | VDD = -20V, ID = -1A, RGEN = 25Ω | 3 | |
| Rise Time | tr | 7 | 18 | ns | VDD = -20V, ID = -1A, RGEN = 25Ω | 3 | |
| Turn-Off Delay Time | td(OFF) | 10 | 15 | ns | VDD = -20V, ID = -1A, RGEN = 25Ω | 3 | |
| Fall Time | tf | 6 | 19 | ns | VDD = -20V, ID = -1A, RGEN = 25Ω | 3 | |
| Diode Forward Voltage Drop | VSD | -1.3 | -2 | V | VGS = 0V, ISD = -1.5A (Note 1) | 3 | |
| Operating Ambient Temperature | TA | -55 | 150 | °C | 2 | ||
| Storage Temperature | TS | -55 | 150 | °C | 2 | ||
| Gate-to-Source Voltage | VGS | -20 | 20 | V | 2 | ||
| Operating Ambient Temperature | TA | -55 | 150 | °C | 3 | ||
| Storage Temperature | TS | -55 | 150 | °C | 3 | ||
| Reverse Recovery Time | trr | 300 | ns | VGS = 0V, ISD = -1.5A | 3 | ||
| Thermal Resistance, Junction to Ambient (3-lead TO-92) | JA | 132 | °C/W | 3 | |||
| Continuous Drain Current | ID | -0.43 | A | Continuous (Note 1: limited by maximum rated TJ) | 3 | ||
| Power Dissipation at TA = 25°C | PD | 0.74 | W | TA = 25°C | 3 | ||
| Repetitive Peak Drain Current | IDRM | -4.2 | A | 3 |
CAD (KiCad official)
- Symbol:
TP0604N3-G - Footprint:
Package_TO_SOT_THT:TO-92_Inline - 3D model: TO-92-3 (KiCad packages3D, STEP)
- 3D model files:
tp0604n3-g-etched.step/tp0604n3-g-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);tp0604n3-g.step/tp0604n3-g.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Microchip Tech datasheet (14 pp, sha256
84059a1b422ad6c0, retrieved 2026-11-02, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).