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TNM2K30K-BX
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Shenzhen JingYang MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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TNM2K30K-BX
Shenzhen JingYang · MOSFETs · SOT-23
TNM2K30K-BX from Shenzhen JingYang, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | GATE | input | Gate terminal of the N-channel MOSFET, rated for a gate-source voltage VGS of ±12 V. |
| 2 | SOURCE | passive | Source terminal of the N-channel MOSFET, serving as the reference for VGS, with the device rated for 30 V drain-source voltage and 0.3 A continuous drain current. |
| 3 | DRAIN | passive | Drain terminal of the N-channel MOSFET, rated for a drain-source voltage VDS of 30 V and a continuous drain current of 0.3 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Shenzhen JingYang |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Gate-Source Voltage | VGS | -12 | 12 | V | 1 | ||
| Drain-Source Voltage | VDS | 30 | V | 1 | |||
| Continuous Drain Current | ID | 0.3 | A | 1 | |||
| Power Dissipation | PD | 0.35 | W | 1 | |||
| Operation Junction and Storage Temperature Range | TJ,Tstg | -55 | 150 | ℃ | 1 | ||
| Gate-Source leakage current | IGSS | -10 | 10 | VGS =±12V, VDS = 0V | 2 | ||
| Gate Threshold Voltage | VGS(th) | 0.6 | 1 | V | VDS = VGS , ID =250µA | 2 | |
| Drain-Source On-Resistance | RDS(on) | 2 | Ω | VGS = 1.2V, ID =100mA | 2 | ||
| Drain-Source On-Resistance | RDS(on) | 1.5 | Ω | VGS =1.5V,ID =200mA | 2 | ||
| Drain-Source On-Resistance | RDS(on) | 1.1 | 2 | Ω | VGS =1.8V,ID =200mA | 2 | |
| Drain-Source On-Resistance | RDS(on) | 0.85 | 1.6 | Ω | VGS =2.5V,ID =200mA | 2 | |
| Drain-Source On-Resistance | RDS(on) | 0.75 | 1.2 | Ω | VGS =4.5V,ID =500mA | 2 | |
| Thermal Resistance, Junction-to-Ambient | RθJA | 357 | ℃/W | 1 | |||
| Drain-Source Breakdown Voltage | VDS | 30 | V | VGS = 0V, ID = 250µA | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | µA | VDS =28V,VGS = 0V | 2 | ||
| Forward Transconductance | gFS | 0.33 | mS | VDS =3V, ID = 10mA | 2 | ||
| Input Capacitance | Ciss | 42 | pF | VDS =5V,VGS =0V,f =1MHz | 2 | ||
| Output Capacitance | Coss | 12.2 | pF | VDS =5V,VGS =0V,f =1MHz | 2 | ||
| Reverse Transfer Capacitance | Crss | 8 | pF | VDS =5V,VGS =0V,f =1MHz | 2 | ||
| Turn-On Delay Time | td(on) | 15 | ns | VGS =5V, VDD =5V, ID =10mA, Rg=10Ω, RL=500Ω | 2 | ||
| Rise Time | tr | 35 | ns | VGS =5V, VDD =5V, ID =10mA, Rg=10Ω, RL=500Ω | 2 | ||
| Turn-Off Delay Time | td(off) | 70 | ns | VGS =5V, VDD =5V, ID =10mA, Rg=10Ω, RL=500Ω | 2 | ||
| Fall Time | tf | 70 | ns | VGS =5V, VDD =5V, ID =10mA, Rg=10Ω, RL=500Ω | 2 |
CAD (KiCad official)
- Symbol:
TNM2K30K-BX - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
tnm2k30k-bx-etched.step/tnm2k30k-bx-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);tnm2k30k-bx.step/tnm2k30k-bx.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Shenzhen JingYang datasheet (5 pp, sha256
b636008bb667c503, retrieved 2026-10-17, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# TNM2K30K-BX
**Shenzhen JingYang** · MOSFETs · SOT-23
TNM2K30K-BX from Shenzhen JingYang, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | GATE | input | Gate terminal of the N-channel MOSFET, rated for a gate-source voltage VGS of ±12 V. |
| 2 | SOURCE | passive | Source terminal of the N-channel MOSFET, serving as the reference for VGS, with the device rated for 30 V drain-source voltage and 0.3 A continuous drain current. |
| 3 | DRAIN | passive | Drain terminal of the N-channel MOSFET, rated for a drain-source voltage VDS of 30 V and a continuous drain current of 0.3 A. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Shenzhen JingYang |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Gate-Source Voltage | VGS | -12 | | 12 | V | | 1 |
| Drain-Source Voltage | VDS | | | 30 | V | | 1 |
| Continuous Drain Current | ID | | | 0.3 | A | | 1 |
| Power Dissipation | PD | | | 0.35 | W | | 1 |
| Operation Junction and Storage Temperature Range | TJ,Tstg | -55 | | 150 | ℃ | | 1 |
| Gate-Source leakage current | IGSS | -10 | | 10 | | VGS =±12V, VDS = 0V | 2 |
| Gate Threshold Voltage | VGS(th) | | 0.6 | 1 | V | VDS = VGS , ID =250µA | 2 |
| Drain-Source On-Resistance | RDS(on) | | | 2 | Ω | VGS = 1.2V, ID =100mA | 2 |
| Drain-Source On-Resistance | RDS(on) | | | 1.5 | Ω | VGS =1.5V,ID =200mA | 2 |
| Drain-Source On-Resistance | RDS(on) | | 1.1 | 2 | Ω | VGS =1.8V,ID =200mA | 2 |
| Drain-Source On-Resistance | RDS(on) | | 0.85 | 1.6 | Ω | VGS =2.5V,ID =200mA | 2 |
| Drain-Source On-Resistance | RDS(on) | | 0.75 | 1.2 | Ω | VGS =4.5V,ID =500mA | 2 |
| Thermal Resistance, Junction-to-Ambient | RθJA | | 357 | | ℃/W | | 1 |
| Drain-Source Breakdown Voltage | VDS | | 30 | | V | VGS = 0V, ID = 250µA | 2 |
| Zero Gate Voltage Drain Current | IDSS | | 1 | | µA | VDS =28V,VGS = 0V | 2 |
| Forward Transconductance | gFS | | 0.33 | | mS | VDS =3V, ID = 10mA | 2 |
| Input Capacitance | Ciss | | 42 | | pF | VDS =5V,VGS =0V,f =1MHz | 2 |
| Output Capacitance | Coss | | 12.2 | | pF | VDS =5V,VGS =0V,f =1MHz | 2 |
| Reverse Transfer Capacitance | Crss | | 8 | | pF | VDS =5V,VGS =0V,f =1MHz | 2 |
| Turn-On Delay Time | td(on) | | 15 | | ns | VGS =5V, VDD =5V, ID =10mA, Rg=10Ω, RL=500Ω | 2 |
| Rise Time | tr | | 35 | | ns | VGS =5V, VDD =5V, ID =10mA, Rg=10Ω, RL=500Ω | 2 |
| Turn-Off Delay Time | td(off) | | 70 | | ns | VGS =5V, VDD =5V, ID =10mA, Rg=10Ω, RL=500Ω | 2 |
| Fall Time | tf | | 70 | | ns | VGS =5V, VDD =5V, ID =10mA, Rg=10Ω, RL=500Ω | 2 |
## CAD (KiCad official)
- Symbol: `TNM2K30K-BX`
- Footprint: `Package_TO_SOT_SMD:SOT-23`
- 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files: `tnm2k30k-bx-etched.step` / `tnm2k30k-bx-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `tnm2k30k-bx.step` / `tnm2k30k-bx.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Shenzhen JingYang datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8603131198314979328) (5 pp, sha256 `b636008bb667c503`, retrieved 2026-10-17, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/tnm2k30k-bx-datasheet.pdf)