component

TNM2K30K-BX

Public Made by Adom

by adom

Shenzhen JingYang MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttransistors-thyristorstnm2k30k-bxfactory-2.0.0extractor-text
Overview Files Discover Packages Releases Dependencies Issues Breadcrumbs Pull Requests Activity

3D Model

Open in new tab ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.

Symbol & Footprint

Schematic Symbol

Open full view ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.

PCB Footprint

Open full view ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.

Datasheet

Open in new tab ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.
Download PDF
Contents

README

markdown

TNM2K30K-BX

Shenzhen JingYang · MOSFETs · SOT-23

TNM2K30K-BX from Shenzhen JingYang, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 GATE input Gate terminal of the N-channel MOSFET, rated for a gate-source voltage VGS of ±12 V.
2 SOURCE passive Source terminal of the N-channel MOSFET, serving as the reference for VGS, with the device rated for 30 V drain-source voltage and 0.3 A continuous drain current.
3 DRAIN passive Drain terminal of the N-channel MOSFET, rated for a drain-source voltage VDS of 30 V and a continuous drain current of 0.3 A.

Key specifications

Parameter Value
Manufacturer Shenzhen JingYang
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Gate-Source Voltage VGS -12 12 V 1
Drain-Source Voltage VDS 30 V 1
Continuous Drain Current ID 0.3 A 1
Power Dissipation PD 0.35 W 1
Operation Junction and Storage Temperature Range TJ,Tstg -55 150 ℃ 1
Gate-Source leakage current IGSS -10 10 VGS =±12V, VDS = 0V 2
Gate Threshold Voltage VGS(th) 0.6 1 V VDS = VGS , ID =250µA 2
Drain-Source On-Resistance RDS(on) 2 Ω VGS = 1.2V, ID =100mA 2
Drain-Source On-Resistance RDS(on) 1.5 Ω VGS =1.5V,ID =200mA 2
Drain-Source On-Resistance RDS(on) 1.1 2 Ω VGS =1.8V,ID =200mA 2
Drain-Source On-Resistance RDS(on) 0.85 1.6 Ω VGS =2.5V,ID =200mA 2
Drain-Source On-Resistance RDS(on) 0.75 1.2 Ω VGS =4.5V,ID =500mA 2
Thermal Resistance, Junction-to-Ambient RθJA 357 ℃/W 1
Drain-Source Breakdown Voltage VDS 30 V VGS = 0V, ID = 250µA 2
Zero Gate Voltage Drain Current IDSS 1 µA VDS =28V,VGS = 0V 2
Forward Transconductance gFS 0.33 mS VDS =3V, ID = 10mA 2
Input Capacitance Ciss 42 pF VDS =5V,VGS =0V,f =1MHz 2
Output Capacitance Coss 12.2 pF VDS =5V,VGS =0V,f =1MHz 2
Reverse Transfer Capacitance Crss 8 pF VDS =5V,VGS =0V,f =1MHz 2
Turn-On Delay Time td(on) 15 ns VGS =5V, VDD =5V, ID =10mA, Rg=10Ω, RL=500Ω 2
Rise Time tr 35 ns VGS =5V, VDD =5V, ID =10mA, Rg=10Ω, RL=500Ω 2
Turn-Off Delay Time td(off) 70 ns VGS =5V, VDD =5V, ID =10mA, Rg=10Ω, RL=500Ω 2
Fall Time tf 70 ns VGS =5V, VDD =5V, ID =10mA, Rg=10Ω, RL=500Ω 2

CAD (KiCad official)

  • Symbol: TNM2K30K-BX
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: tnm2k30k-bx-etched.step / tnm2k30k-bx-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); tnm2k30k-bx.step / tnm2k30k-bx.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Shenzhen JingYang datasheet (5 pp, sha256 b636008bb667c503, retrieved 2026-10-17, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF