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TNM1K30KX

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Shenzhen JingYang MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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TNM1K30KX

Shenzhen JingYang · MOSFETs · SOT-23

TNM1K30KX from Shenzhen JingYang, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 GATE input Gate terminal of the N-channel MOSFET, with gate-source voltage rated at ±12 V (VGS).
2 SOURCE passive Source terminal of the N-channel MOSFET, with drain-source voltage rated at 30 V (VDS).
3 DRAIN passive Drain terminal of the N-channel MOSFET, with continuous drain current rated at 0.4 A (ID).

Key specifications

Parameter Value
Manufacturer Shenzhen JingYang
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 30 V 1
Gate-Source Voltage VGS -12 12 V 1
Continuous Drain Current ID 0.4 A 1
Power Dissipation PD 0.35 W 1
Operation Junction and Storage Temperature Range TJ,Tstg -55 150 ℃ 1
Drain-Source Breakdown Voltage VDS 30 V VGS = 0V, ID =250µA 2
Zero Gate Voltage Drain Current IDSS 1 µA VDS =30V,VGS = 0V 2
Gate-Source leakage current IGSS -10 10 VGS =±10V, VDS = 0V 2
Gate Threshold Voltage VGS(th) 0.78 1.1 V VDS = VGS , ID =250µA 2
Drain-Source On-Resistance RDS(on) 0.8 Ω VGS = 4.5V, ID =400mA 2
Drain-Source On-Resistance RDS(on) 1 Ω VGS = 2.5V, ID =300mA 2
Forward Transconductance gfs 0.33 mS VDS=3V,ID=10mA 2
Input Capacitance Ciss 42 pF VDS =5V,VGS =0V,f =1MHz 2
Output Capacitance Coss 12.2 pF VDS =5V,VGS =0V,f =1MHz 2
Reverse Transfer Capacitance Crss 8 pF VDS =5V,VGS =0V,f =1MHz 2
Turn-On Delay Time td(on) 15 ns VGS =5V, VDD =5V, ID =10mA, Rg=10Ω, RL=500Ω 2
Rise Time tr 35 ns VGS =5V, VDD =5V, ID =10mA, Rg=10Ω, RL=500Ω 2
Turn-Off Delay Time td(off) 70 ns VGS =5V, VDD =5V, ID =10mA, Rg=10Ω, RL=500Ω 2
Fall Time tf 70 ns VGS =5V, VDD =5V, ID =10mA, Rg=10Ω, RL=500Ω 2
Thermal Resistance, Junction-to-Ambient RθJA 357 ℃ /W 1

CAD (KiCad official)

  • Symbol: TNM1K30KX
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: tnm1k30kx-etched.step / tnm1k30kx-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); tnm1k30kx.step / tnm1k30kx.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Shenzhen JingYang datasheet (5 pp, sha256 02027fc647fd176a, retrieved 2026-10-17, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF