component
TNM1K30KX
Public Made by Adomby adom
Shenzhen JingYang MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownTNM1K30KX
Shenzhen JingYang · MOSFETs · SOT-23
TNM1K30KX from Shenzhen JingYang, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | GATE | input | Gate terminal of the N-channel MOSFET, with gate-source voltage rated at ±12 V (VGS). |
| 2 | SOURCE | passive | Source terminal of the N-channel MOSFET, with drain-source voltage rated at 30 V (VDS). |
| 3 | DRAIN | passive | Drain terminal of the N-channel MOSFET, with continuous drain current rated at 0.4 A (ID). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Shenzhen JingYang |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 30 | V | 1 | |||
| Gate-Source Voltage | VGS | -12 | 12 | V | 1 | ||
| Continuous Drain Current | ID | 0.4 | A | 1 | |||
| Power Dissipation | PD | 0.35 | W | 1 | |||
| Operation Junction and Storage Temperature Range | TJ,Tstg | -55 | 150 | ℃ | 1 | ||
| Drain-Source Breakdown Voltage | VDS | 30 | V | VGS = 0V, ID =250µA | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | µA | VDS =30V,VGS = 0V | 2 | ||
| Gate-Source leakage current | IGSS | -10 | 10 | VGS =±10V, VDS = 0V | 2 | ||
| Gate Threshold Voltage | VGS(th) | 0.78 | 1.1 | V | VDS = VGS , ID =250µA | 2 | |
| Drain-Source On-Resistance | RDS(on) | 0.8 | Ω | VGS = 4.5V, ID =400mA | 2 | ||
| Drain-Source On-Resistance | RDS(on) | 1 | Ω | VGS = 2.5V, ID =300mA | 2 | ||
| Forward Transconductance | gfs | 0.33 | mS | VDS=3V,ID=10mA | 2 | ||
| Input Capacitance | Ciss | 42 | pF | VDS =5V,VGS =0V,f =1MHz | 2 | ||
| Output Capacitance | Coss | 12.2 | pF | VDS =5V,VGS =0V,f =1MHz | 2 | ||
| Reverse Transfer Capacitance | Crss | 8 | pF | VDS =5V,VGS =0V,f =1MHz | 2 | ||
| Turn-On Delay Time | td(on) | 15 | ns | VGS =5V, VDD =5V, ID =10mA, Rg=10Ω, RL=500Ω | 2 | ||
| Rise Time | tr | 35 | ns | VGS =5V, VDD =5V, ID =10mA, Rg=10Ω, RL=500Ω | 2 | ||
| Turn-Off Delay Time | td(off) | 70 | ns | VGS =5V, VDD =5V, ID =10mA, Rg=10Ω, RL=500Ω | 2 | ||
| Fall Time | tf | 70 | ns | VGS =5V, VDD =5V, ID =10mA, Rg=10Ω, RL=500Ω | 2 | ||
| Thermal Resistance, Junction-to-Ambient | RθJA | 357 | ℃ /W | 1 |
CAD (KiCad official)
- Symbol:
TNM1K30KX - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
tnm1k30kx-etched.step/tnm1k30kx-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);tnm1k30kx.step/tnm1k30kx.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Shenzhen JingYang datasheet (5 pp, sha256
02027fc647fd176a, retrieved 2026-10-17, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).