component
TMN3080NF
Public Made by Adomby adom
Tritech MOS MOSFETs, DFN-8(5x6). Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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TMN3080NF
Tritech MOS · MOSFETs · DFN-8(5x6)
TMN3080NF from Tritech MOS, in a DFN-8(5x6). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source terminal; the datasheet drawing shows pins 1-3 as source, and the part is rated for VDS = 30V and ID = 80A. |
| 2 | S | passive | Source terminal; the datasheet drawing shows pins 1-3 as source, and the part is rated for VDS = 30V and ID = 80A. |
| 3 | S | passive | Source terminal; the datasheet drawing shows pins 1-3 as source, and the part is rated for VDS = 30V and ID = 80A. |
| 4 | G | input | Gate terminal; the datasheet limits VGS to ±20V, with a gate threshold of 1V min to 2.5V max at 250µA. |
| 5 | D | passive | Drain terminal; the datasheet drawing shows pins 5-8 as drain, with a 30V maximum VDS and 80A continuous ID. |
| 6 | D | passive | Drain terminal; the datasheet drawing shows pins 5-8 as drain, with a 30V maximum VDS and 80A continuous ID. |
| 7 | D | passive | Drain terminal; the datasheet drawing shows pins 5-8 as drain, with a 30V maximum VDS and 80A continuous ID. |
| 8 | D | passive | Drain terminal; the datasheet drawing shows pins 5-8 as drain, with a 30V maximum VDS and 80A continuous ID. |
| 9 | EP | passive | Exposed pad (from the footprint; not named in the datasheet pin table). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Tritech MOS |
| Package | DFN-8(5x6) |
| Category | Transistors/Thyristors |
| Pins | 9 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 30 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Drain Current-Continuous | ID | 80 | A | 1 | |||
| Drain Current-Continuous (TC=100℃) | ID (100℃) | 46 | A | TC=100℃ | 1 | ||
| Pulsed Drain Current | IDM | 200 | A | Note 1: repetitive rating, pulse width limited by maximum junction temperature | 1 | ||
| Maximum Power Dissipation | PD | 65 | W | 1 | |||
| Derating factor | 0.52 | W/℃ | 1 | ||||
| Single pulse avalanche energy | EAS | 150 | mJ | Note 5: Tj=25℃, VDD=15V, VG=10V, L=0.5mH, Rg=25Ω | 1 | ||
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance, Junction-to-Case | RθJC | 1.92 | ℃/W | 1 | |||
| Drain-Source Breakdown Voltage | BVDSS | 30 | V | VGS=0V ID=250μA | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | μA | VDS=30V,VGS=0V | 2 | ||
| Gate-Body Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V,VDS=0V | 2 | |
| Gate Threshold Voltage | VGS(th) | 1 | 1.5 | 2.5 | V | VDS=VGS,ID=250μA | 2 |
| Drain-Source On-State Resistance (VGS=10V) | RDS(ON) | 4.2 | 5.9 | mΩ | VGS=10V, ID=20A | 2 | |
| Drain-Source On-State Resistance (VGS=4.5V) | RDS(ON) | 6 | 8.9 | mΩ | VGS=4.5V, ID=20A | 2 | |
| Forward Transconductance | gFS | 20 | S | VDS=5V,ID=20A | 2 | ||
| Diode Forward Voltage | VSD | 0.85 | 1.2 | V | VGS=0V,IS=20A | 2 | |
| Diode Forward Current | IS | 80 | A | 2 | |||
| Reverse Recovery Time | trr | 27 | nS | TJ = 25°C, IF = 20A, di/dt = 100A/μs | 2 | ||
| Reverse Recovery Charge | Qrr | 20 | nC | 2 |
CAD (KiCad official)
- Symbol:
TMN3080NF - Footprint:
Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm - 3D model: DFN-8(5x6) (KiCad packages3D, STEP)
- 3D model files:
tmn3080nf-etched.step/tmn3080nf-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);tmn3080nf.step/tmn3080nf.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Tritech MOS datasheet (6 pp, sha256
9d62e36532267474, retrieved 2026-10-16, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# TMN3080NF
**Tritech MOS** · MOSFETs · DFN-8(5x6)
TMN3080NF from Tritech MOS, in a DFN-8(5x6). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source terminal; the datasheet drawing shows pins 1-3 as source, and the part is rated for VDS = 30V and ID = 80A. |
| 2 | S | passive | Source terminal; the datasheet drawing shows pins 1-3 as source, and the part is rated for VDS = 30V and ID = 80A. |
| 3 | S | passive | Source terminal; the datasheet drawing shows pins 1-3 as source, and the part is rated for VDS = 30V and ID = 80A. |
| 4 | G | input | Gate terminal; the datasheet limits VGS to ±20V, with a gate threshold of 1V min to 2.5V max at 250µA. |
| 5 | D | passive | Drain terminal; the datasheet drawing shows pins 5-8 as drain, with a 30V maximum VDS and 80A continuous ID. |
| 6 | D | passive | Drain terminal; the datasheet drawing shows pins 5-8 as drain, with a 30V maximum VDS and 80A continuous ID. |
| 7 | D | passive | Drain terminal; the datasheet drawing shows pins 5-8 as drain, with a 30V maximum VDS and 80A continuous ID. |
| 8 | D | passive | Drain terminal; the datasheet drawing shows pins 5-8 as drain, with a 30V maximum VDS and 80A continuous ID. |
| 9 | EP | passive | Exposed pad (from the footprint; not named in the datasheet pin table). |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Tritech MOS |
| Package | DFN-8(5x6) |
| Category | Transistors/Thyristors |
| Pins | 9 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | | | 30 | V | | 1 |
| Gate-Source Voltage | VGS | -20 | | 20 | V | | 1 |
| Drain Current-Continuous | ID | | | 80 | A | | 1 |
| Drain Current-Continuous (TC=100℃) | ID (100℃) | | | 46 | A | TC=100℃ | 1 |
| Pulsed Drain Current | IDM | | | 200 | A | Note 1: repetitive rating, pulse width limited by maximum junction temperature | 1 |
| Maximum Power Dissipation | PD | | | 65 | W | | 1 |
| Derating factor | | | | 0.52 | W/℃ | | 1 |
| Single pulse avalanche energy | EAS | | | 150 | mJ | Note 5: Tj=25℃, VDD=15V, VG=10V, L=0.5mH, Rg=25Ω | 1 |
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | | 150 | ℃ | | 1 |
| Thermal Resistance, Junction-to-Case | RθJC | | 1.92 | | ℃/W | | 1 |
| Drain-Source Breakdown Voltage | BVDSS | 30 | | | V | VGS=0V ID=250μA | 2 |
| Zero Gate Voltage Drain Current | IDSS | | | 1 | μA | VDS=30V,VGS=0V | 2 |
| Gate-Body Leakage Current | IGSS | -100 | | 100 | nA | VGS=±20V,VDS=0V | 2 |
| Gate Threshold Voltage | VGS(th) | 1 | 1.5 | 2.5 | V | VDS=VGS,ID=250μA | 2 |
| Drain-Source On-State Resistance (VGS=10V) | RDS(ON) | | 4.2 | 5.9 | mΩ | VGS=10V, ID=20A | 2 |
| Drain-Source On-State Resistance (VGS=4.5V) | RDS(ON) | | 6 | 8.9 | mΩ | VGS=4.5V, ID=20A | 2 |
| Forward Transconductance | gFS | 20 | | | S | VDS=5V,ID=20A | 2 |
| Diode Forward Voltage | VSD | | 0.85 | 1.2 | V | VGS=0V,IS=20A | 2 |
| Diode Forward Current | IS | | | 80 | A | | 2 |
| Reverse Recovery Time | trr | | | 27 | nS | TJ = 25°C, IF = 20A, di/dt = 100A/μs | 2 |
| Reverse Recovery Charge | Qrr | | | 20 | nC | | 2 |
## CAD (KiCad official)
- Symbol: `TMN3080NF`
- Footprint: `Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm`
- 3D model: DFN-8(5x6) (KiCad packages3D, STEP)
- 3D model files: `tmn3080nf-etched.step` / `tmn3080nf-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `tmn3080nf.step` / `tmn3080nf.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Tritech MOS datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8602998764692905984) (6 pp, sha256 `9d62e36532267474`, retrieved 2026-10-16, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/tmn3080nf-datasheet.pdf)