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TMN3080NF

Public Made by Adom

by adom

Tritech MOS MOSFETs, DFN-8(5x6). Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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Made with KiCad 10.0 · needs KiCad 10.0 or later to open · KiCad file format 20260206
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TMN3080NF

Tritech MOS · MOSFETs · DFN-8(5x6)

TMN3080NF from Tritech MOS, in a DFN-8(5x6). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S passive Source terminal; the datasheet drawing shows pins 1-3 as source, and the part is rated for VDS = 30V and ID = 80A.
2 S passive Source terminal; the datasheet drawing shows pins 1-3 as source, and the part is rated for VDS = 30V and ID = 80A.
3 S passive Source terminal; the datasheet drawing shows pins 1-3 as source, and the part is rated for VDS = 30V and ID = 80A.
4 G input Gate terminal; the datasheet limits VGS to ±20V, with a gate threshold of 1V min to 2.5V max at 250µA.
5 D passive Drain terminal; the datasheet drawing shows pins 5-8 as drain, with a 30V maximum VDS and 80A continuous ID.
6 D passive Drain terminal; the datasheet drawing shows pins 5-8 as drain, with a 30V maximum VDS and 80A continuous ID.
7 D passive Drain terminal; the datasheet drawing shows pins 5-8 as drain, with a 30V maximum VDS and 80A continuous ID.
8 D passive Drain terminal; the datasheet drawing shows pins 5-8 as drain, with a 30V maximum VDS and 80A continuous ID.
9 EP passive Exposed pad (from the footprint; not named in the datasheet pin table).

Key specifications

Parameter Value
Manufacturer Tritech MOS
Package DFN-8(5x6)
Category Transistors/Thyristors
Pins 9

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 30 V 1
Gate-Source Voltage VGS -20 20 V 1
Drain Current-Continuous ID 80 A 1
Drain Current-Continuous (TC=100℃) ID (100℃) 46 A TC=100℃ 1
Pulsed Drain Current IDM 200 A Note 1: repetitive rating, pulse width limited by maximum junction temperature 1
Maximum Power Dissipation PD 65 W 1
Derating factor 0.52 W/℃ 1
Single pulse avalanche energy EAS 150 mJ Note 5: Tj=25℃, VDD=15V, VG=10V, L=0.5mH, Rg=25Ω 1
Operating Junction and Storage Temperature Range TJ,TSTG -55 150 ℃ 1
Thermal Resistance, Junction-to-Case RθJC 1.92 ℃/W 1
Drain-Source Breakdown Voltage BVDSS 30 V VGS=0V ID=250μA 2
Zero Gate Voltage Drain Current IDSS 1 μA VDS=30V,VGS=0V 2
Gate-Body Leakage Current IGSS -100 100 nA VGS=±20V,VDS=0V 2
Gate Threshold Voltage VGS(th) 1 1.5 2.5 V VDS=VGS,ID=250μA 2
Drain-Source On-State Resistance (VGS=10V) RDS(ON) 4.2 5.9 mΩ VGS=10V, ID=20A 2
Drain-Source On-State Resistance (VGS=4.5V) RDS(ON) 6 8.9 mΩ VGS=4.5V, ID=20A 2
Forward Transconductance gFS 20 S VDS=5V,ID=20A 2
Diode Forward Voltage VSD 0.85 1.2 V VGS=0V,IS=20A 2
Diode Forward Current IS 80 A 2
Reverse Recovery Time trr 27 nS TJ = 25°C, IF = 20A, di/dt = 100A/μs 2
Reverse Recovery Charge Qrr 20 nC 2

CAD (KiCad official)

  • Symbol: TMN3080NF
  • Footprint: Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm
  • 3D model: DFN-8(5x6) (KiCad packages3D, STEP)
  • 3D model files: tmn3080nf-etched.step / tmn3080nf-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); tmn3080nf.step / tmn3080nf.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Tritech MOS datasheet (6 pp, sha256 9d62e36532267474, retrieved 2026-10-16, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF