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TMN2012S

Public Made by Adom

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Tritech MOS MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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tmn2012s-etched.step tmn2012s: factory component page (tier=lcsc) · Ray 16d ago
tmn2012s-hero.glb tmn2012s: hero GLB from the etched model (keeps the MPN mark) · Ray 16d ago
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TMN2012S

Tritech MOS · MOSFETs · SOP-8

TMN2012S from Tritech MOS, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S passive Source of the N-channel MOSFET (pin 1), with continuous source current IS up to 10A.
2 S passive Source of the N-channel MOSFET, with continuous source current IS up to 10A.
3 S passive Source of the N-channel MOSFET, with continuous source current IS up to 10A.
4 G input Gate of the N-channel MOSFET, with gate-source voltage rated at ±12V maximum.
5 D passive Drain of the N-channel MOSFET, rated for 20V drain-source voltage and 10A continuous drain current.
6 D passive Drain of the N-channel MOSFET, rated for 20V drain-source voltage and 10A continuous drain current.
7 D passive Drain of the N-channel MOSFET, rated for 20V drain-source voltage and 10A continuous drain current.
8 D passive Drain of the N-channel MOSFET, rated for 20V drain-source voltage and 10A continuous drain current.

Key specifications

Parameter Value
Manufacturer Tritech MOS
Package SOP-8
Category Transistors/Thyristors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 20 V 1
Gate-Source Voltage VGS -12 12 V 1
Continuous Drain Current ID 10 A TA= 25°C 1
Pulsed Drain Current IDM 20 A 1
Power Dissipation PD 2.25 W TA= 25°C 1
Operating Junction and Storage Temperature Range TJ, TSTG -55 150 °C 1
Thermal Resistance from Junction to Ambient RθJA 90 °C/W Surface mounted on 1 inch² FR-4 board with 2OZ copper 1
Drain-Source Breakdown Voltage BVDSS 20 V VGS = 0 V, ID = 250µA 2
Gate Leakage Current IGSS -100 100 nA VGS = ±12V, VDS = 0 V 2
Drain Cut-off Current IDSS 1 µA VDS = 20V, VGS = 0 V 2
Gate Threshold Voltage VGS(th) 0.45 0.7 1 V VGS = VDS, ID = 250µA 2
Drain-Source On-State Resistance RDS(on) 12 15 mΩ VGS = 4.5V, ID = 5A 2
Drain-Source On-State Resistance RDS(on) 17 21 mΩ VGS = 2.5V, ID = 4.7A 2
Drain-Source On-State Resistance RDS(on) 28 50 mΩ VGS = 1.8V, ID = 4.3A 2
Body Diode Voltage VSD 1.2 V IS=4A, VGS = 0V 2
Continuous Source Current IS 10 A 2

CAD (KiCad official)

  • Symbol: TMN2012S
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOP-8 (KiCad packages3D, STEP)
  • 3D model files: tmn2012s-etched.step / tmn2012s-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); tmn2012s.step / tmn2012s.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Tritech MOS datasheet (5 pp, sha256 a6b72ec6a230400c, retrieved 2026-10-17, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF