# TMGN10008SI

**Tritech-MOS** · MOSFETs · SOT-89-3L

TMGN10008SI from Tritech-MOS, in a SOT-89-3L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage rated ±20 V, with threshold VGS(th) of 1.0 V min to 3.0 V max at ID = 250 μA. |
| 2 | D | passive | Drain, also connected to the exposed tab; drain-source voltage rated 100 V and continuous drain current 8 A at TA=25℃. |
| 3 | S | passive | Source; the body diode carries up to 8.0 A continuous and 12 A pulsed forward current. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | Tritech-MOS |
| Package | SOT-89-3L |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | V(BR)DSS | 100 | 110 |  | V | VGS = 0V, ID = 250μA | 2 |
| Zero Gate Voltage Drain Current | IDSS |  |  | 1 | μA | VDS = 100V, VGS = 0V | 2 |
| Gate to Body Leakage Current | IGSS | -100 |  | 100 | nA | VDS = 0V, VGS = ±20V | 2 |
| Gate Threshold Voltage | VGS(th) | 1 | 2 | 3 | V | VDS = VGS, ID = 250μA | 2 |
| Static Drain-Source On-Resistance | RDS(on) |  | 100 | 130 | mΩ | VGS = 10V, ID = 3A | 2 |
| Maximum Continuous Drain to Source Diode Forward Current | IS |  |  | 8 | A |  | 2 |
| Maximum Pulsed Drain to Source Diode Forward Current | ISM |  |  | 12 | A |  | 2 |
| Drain to Source Diode Forward Voltage | VSD |  |  | 1.3 | V | VGS = 0V, IS =3A | 2 |
| Drain-Source Voltage | VDS |  |  | 100 | V |  | 1 |
| Gate-Source Voltage | VGS | -20 |  | 20 | V |  | 1 |
| Continuous Drain Current | ID@TA=25℃ |  |  | 8 | A | TA=25℃, VGS @ 10V | 1 |
| Continuous Drain Current | ID@TA=70℃ |  |  | 3.2 | A | VGS @ 10V | 1 |
| Pulsed Drain Current | IDM |  |  | 12 | A |  | 1 |
| Total Power Dissipation | PD@TA=25℃ |  |  | 2 | W |  | 1 |
| Storage Temperature Range | TSTG | -55 |  | 150 | ℃ |  | 1 |
| Operating Junction Temperature Range | TJ | -55 |  | 150 | ℃ |  | 1 |
| Thermal Resistance Junction-ambient | RθJA |  |  | 125 | ℃/W |  | 1 |
| Thermal Resistance Junction-Case | RθJC |  |  | 80 | ℃/W |  | 1 |

## CAD (KiCad official)

- Symbol: `TMGN10008SI`
- Footprint: `Package_TO_SOT_SMD:SOT-89-3`
- 3D model: SOT-89-3L (KiCad packages3D, STEP)
- 3D model files: `tmgn10008si-etched.step` / `tmgn10008si-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `tmgn10008si.step` / `tmgn10008si.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [Tritech-MOS datasheet](docs/tmgn10008si-datasheet.pdf) (5 pp, sha256 `f7dbea6ee06a08a8`, retrieved 2026-11-05, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/tmgn10008si-datasheet.pdf)