component
TMGN10008SI
Public Made by Adomby adom
Tritech-MOS MOSFETs, SOT-89-3L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownTMGN10008SI
Tritech-MOS · MOSFETs · SOT-89-3L
TMGN10008SI from Tritech-MOS, in a SOT-89-3L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage rated ±20 V, with threshold VGS(th) of 1.0 V min to 3.0 V max at ID = 250 μA. |
| 2 | D | passive | Drain, also connected to the exposed tab; drain-source voltage rated 100 V and continuous drain current 8 A at TA=25℃. |
| 3 | S | passive | Source; the body diode carries up to 8.0 A continuous and 12 A pulsed forward current. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Tritech-MOS |
| Package | SOT-89-3L |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | V(BR)DSS | 100 | 110 | V | VGS = 0V, ID = 250μA | 2 | |
| Zero Gate Voltage Drain Current | IDSS | 1 | μA | VDS = 100V, VGS = 0V | 2 | ||
| Gate to Body Leakage Current | IGSS | -100 | 100 | nA | VDS = 0V, VGS = ±20V | 2 | |
| Gate Threshold Voltage | VGS(th) | 1 | 2 | 3 | V | VDS = VGS, ID = 250μA | 2 |
| Static Drain-Source On-Resistance | RDS(on) | 100 | 130 | mΩ | VGS = 10V, ID = 3A | 2 | |
| Maximum Continuous Drain to Source Diode Forward Current | IS | 8 | A | 2 | |||
| Maximum Pulsed Drain to Source Diode Forward Current | ISM | 12 | A | 2 | |||
| Drain to Source Diode Forward Voltage | VSD | 1.3 | V | VGS = 0V, IS =3A | 2 | ||
| Drain-Source Voltage | VDS | 100 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current | ID@TA=25℃ | 8 | A | TA=25℃, VGS @ 10V | 1 | ||
| Continuous Drain Current | ID@TA=70℃ | 3.2 | A | VGS @ 10V | 1 | ||
| Pulsed Drain Current | IDM | 12 | A | 1 | |||
| Total Power Dissipation | PD@TA=25℃ | 2 | W | 1 | |||
| Storage Temperature Range | TSTG | -55 | 150 | ℃ | 1 | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance Junction-ambient | RθJA | 125 | ℃/W | 1 | |||
| Thermal Resistance Junction-Case | RθJC | 80 | ℃/W | 1 |
CAD (KiCad official)
- Symbol:
TMGN10008SI - Footprint:
Package_TO_SOT_SMD:SOT-89-3 - 3D model: SOT-89-3L (KiCad packages3D, STEP)
- 3D model files:
tmgn10008si-etched.step/tmgn10008si-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);tmgn10008si.step/tmgn10008si.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Tritech-MOS datasheet (5 pp, sha256
f7dbea6ee06a08a8, retrieved 2026-11-05, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).