component
TM3401AI
Public Made by Adomby adom
Tritech MOS MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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TM3401AI
Tritech MOS · MOSFETs · SOT-23
TM3401AI from Tritech MOS, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate of the P-channel MOSFET, with gate-source voltage rated at ±12 V maximum and threshold VGS(th) of -0.5 V min to -1.1 V typ at ID=-250uA. |
| 2 | S | passive | Source of the P-channel MOSFET, carrying continuous source current up to -4.6 A. |
| 3 | D | passive | Drain of the P-channel MOSFET, rated for -30 V drain-source voltage and -4.6 A continuous drain current at TA=25℃. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Tritech MOS |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | -30 | V | 1 | |||
| Gate-Source Voltage | VGS | -12 | 12 | V | 1 | ||
| Continuous Drain Current | ID | -4.6 | A | TA=25℃ | 1 | ||
| Continuous Drain Current | ID | -4 | A | TA=70℃ | 1 | ||
| Pulsed Drain Current | IDM | -20 | A | 1 | |||
| Total Power Dissipation | PD | 1.4 | W | TA=25℃ | 1 | ||
| Total Power Dissipation | PD | 0.9 | W | TA=70℃ | 1 | ||
| Storage Temperature Range | TSTG | -55 | 150 | ℃ | 1 | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance Junction-Ambient | RθJA | 125 | ℃/W | Surface mounted on 1 inch2 FR-4 board, 2OZ copper (note 1) | 1 | ||
| Thermal Resistance Junction-Ambient (t ≤10s) | RθJA | 85 | ℃/W | t ≤10s, note 1 | 1 | ||
| Drain-Source Breakdown Voltage | BVDSS | -30 | -32 | V | VGS=0V, ID=-250uA | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 40 | 48 | mΩ | VGS=-10V, ID=-3A | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 49 | 65 | mΩ | VGS=-4.5V, ID=-3A | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 75 | 85 | mΩ | VGS=-2.5V, ID=-2A | 2 | |
| Gate Threshold Voltage | VGS(th) | -0.5 | -1.1 | V | VGS=VDS, ID=-250uA | 2 | |
| Drain-Source Leakage Current | IDSS | -1 | uA | VDS=-24V, VGS=0V, TJ=25℃ | 2 | ||
| Drain-Source Leakage Current | IDSS | -5 | uA | VDS=-24V, VGS=0V, TJ=55℃ | 2 | ||
| Gate-Source Leakage Current | IGSS | -100 | 100 | nA | VGS=±12V, VDS=0V | 2 | |
| Continuous Source Current | IS | -4.6 | A | VG=VD=0V, Force Current | 2 | ||
| Diode Forward Voltage | VSD | -1.2 | V | VGS=0V, IS=-1A, TJ=25℃ | 2 | ||
| BVDSS Temperature Coefficient | △BVDSS/△TJ | -0.014 | V/℃ | Reference to 25℃, ID=-1mA | 2 | ||
| VGS(th) Temperature Coefficient | △VGS(th) | 2.6 | mV/℃ | 2 | |||
| Forward Transconductance | gfs | 5.6 | S | VDS=-5V, ID=-3A | 2 | ||
| Total Gate Charge (-4.5V) | Qg | 11.9 | nC | VDS=-15V, VGS=-4.5V, ID=-3A | 2 | ||
| Gate-Source Charge | Qgs | 1.8 | nC | VDS=-15V, VGS=-4.5V, ID=-3A | 2 | ||
| Gate-Drain Charge | Qgd | 3 | nC | VDS=-15V, VGS=-4.5V, ID=-3A | 2 | ||
| Turn-On Delay Time | Td(on) | 6.6 | ns | VDD=-15V, VGS=-4.5V, RG=3.3Ω, ID=-3A | 2 | ||
| Rise Time | Tr | 27.8 | ns | VDD=-15V, VGS=-4.5V, RG=3.3Ω, ID=-3A | 2 | ||
| Turn-Off Delay Time | Td(off) | 46.2 | ns | VDD=-15V, VGS=-4.5V, RG=3.3Ω, ID=-3A | 2 | ||
| Fall Time | Tf | 20.6 | ns | VDD=-15V, VGS=-4.5V, RG=3.3Ω, ID=-3A | 2 | ||
| Input Capacitance | Ciss | 290 | pF | VDS=-15V, VGS=0V, f=1MHz | 2 | ||
| Output Capacitance | Coss | 73 | pF | VDS=-15V, VGS=0V, f=1MHz | 2 | ||
| Reverse Transfer Capacitance | Crss | 71 | pF | VDS=-15V, VGS=0V, f=1MHz | 2 |
CAD (KiCad official)
- Symbol:
TM3401AI - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
tm3401ai-etched.step/tm3401ai-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);tm3401ai.step/tm3401ai.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Tritech MOS datasheet (5 pp, sha256
e48a2d4f87d9fecf, retrieved 2026-10-17, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# TM3401AI
**Tritech MOS** · MOSFETs · SOT-23
TM3401AI from Tritech MOS, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate of the P-channel MOSFET, with gate-source voltage rated at ±12 V maximum and threshold VGS(th) of -0.5 V min to -1.1 V typ at ID=-250uA. |
| 2 | S | passive | Source of the P-channel MOSFET, carrying continuous source current up to -4.6 A. |
| 3 | D | passive | Drain of the P-channel MOSFET, rated for -30 V drain-source voltage and -4.6 A continuous drain current at TA=25℃. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Tritech MOS |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | | | -30 | V | | 1 |
| Gate-Source Voltage | VGS | -12 | | 12 | V | | 1 |
| Continuous Drain Current | ID | | | -4.6 | A | TA=25℃ | 1 |
| Continuous Drain Current | ID | | | -4 | A | TA=70℃ | 1 |
| Pulsed Drain Current | IDM | | | -20 | A | | 1 |
| Total Power Dissipation | PD | | | 1.4 | W | TA=25℃ | 1 |
| Total Power Dissipation | PD | | | 0.9 | W | TA=70℃ | 1 |
| Storage Temperature Range | TSTG | -55 | | 150 | ℃ | | 1 |
| Operating Junction Temperature Range | TJ | -55 | | 150 | ℃ | | 1 |
| Thermal Resistance Junction-Ambient | RθJA | | | 125 | ℃/W | Surface mounted on 1 inch2 FR-4 board, 2OZ copper (note 1) | 1 |
| Thermal Resistance Junction-Ambient (t ≤10s) | RθJA | | | 85 | ℃/W | t ≤10s, note 1 | 1 |
| Drain-Source Breakdown Voltage | BVDSS | -30 | -32 | | V | VGS=0V, ID=-250uA | 2 |
| Static Drain-Source On-Resistance | RDS(ON) | | 40 | 48 | mΩ | VGS=-10V, ID=-3A | 2 |
| Static Drain-Source On-Resistance | RDS(ON) | | 49 | 65 | mΩ | VGS=-4.5V, ID=-3A | 2 |
| Static Drain-Source On-Resistance | RDS(ON) | | 75 | 85 | mΩ | VGS=-2.5V, ID=-2A | 2 |
| Gate Threshold Voltage | VGS(th) | -0.5 | -1.1 | | V | VGS=VDS, ID=-250uA | 2 |
| Drain-Source Leakage Current | IDSS | | | -1 | uA | VDS=-24V, VGS=0V, TJ=25℃ | 2 |
| Drain-Source Leakage Current | IDSS | | | -5 | uA | VDS=-24V, VGS=0V, TJ=55℃ | 2 |
| Gate-Source Leakage Current | IGSS | -100 | | 100 | nA | VGS=±12V, VDS=0V | 2 |
| Continuous Source Current | IS | | | -4.6 | A | VG=VD=0V, Force Current | 2 |
| Diode Forward Voltage | VSD | | | -1.2 | V | VGS=0V, IS=-1A, TJ=25℃ | 2 |
| BVDSS Temperature Coefficient | △BVDSS/△TJ | | -0.014 | | V/℃ | Reference to 25℃, ID=-1mA | 2 |
| VGS(th) Temperature Coefficient | △VGS(th) | | 2.6 | | mV/℃ | | 2 |
| Forward Transconductance | gfs | | 5.6 | | S | VDS=-5V, ID=-3A | 2 |
| Total Gate Charge (-4.5V) | Qg | | 11.9 | | nC | VDS=-15V, VGS=-4.5V, ID=-3A | 2 |
| Gate-Source Charge | Qgs | | 1.8 | | nC | VDS=-15V, VGS=-4.5V, ID=-3A | 2 |
| Gate-Drain Charge | Qgd | | 3 | | nC | VDS=-15V, VGS=-4.5V, ID=-3A | 2 |
| Turn-On Delay Time | Td(on) | | 6.6 | | ns | VDD=-15V, VGS=-4.5V, RG=3.3Ω, ID=-3A | 2 |
| Rise Time | Tr | | 27.8 | | ns | VDD=-15V, VGS=-4.5V, RG=3.3Ω, ID=-3A | 2 |
| Turn-Off Delay Time | Td(off) | | 46.2 | | ns | VDD=-15V, VGS=-4.5V, RG=3.3Ω, ID=-3A | 2 |
| Fall Time | Tf | | 20.6 | | ns | VDD=-15V, VGS=-4.5V, RG=3.3Ω, ID=-3A | 2 |
| Input Capacitance | Ciss | | 290 | | pF | VDS=-15V, VGS=0V, f=1MHz | 2 |
| Output Capacitance | Coss | | 73 | | pF | VDS=-15V, VGS=0V, f=1MHz | 2 |
| Reverse Transfer Capacitance | Crss | | 71 | | pF | VDS=-15V, VGS=0V, f=1MHz | 2 |
## CAD (KiCad official)
- Symbol: `TM3401AI`
- Footprint: `Package_TO_SOT_SMD:SOT-23`
- 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files: `tm3401ai-etched.step` / `tm3401ai-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `tm3401ai.step` / `tm3401ai.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Tritech MOS datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8590906547029823488) (5 pp, sha256 `e48a2d4f87d9fecf`, retrieved 2026-10-17, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/tm3401ai-datasheet.pdf)