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TM3401AI

Public Made by Adom

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Tritech MOS MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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TM3401AI

Tritech MOS · MOSFETs · SOT-23

TM3401AI from Tritech MOS, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate of the P-channel MOSFET, with gate-source voltage rated at ±12 V maximum and threshold VGS(th) of -0.5 V min to -1.1 V typ at ID=-250uA.
2 S passive Source of the P-channel MOSFET, carrying continuous source current up to -4.6 A.
3 D passive Drain of the P-channel MOSFET, rated for -30 V drain-source voltage and -4.6 A continuous drain current at TA=25℃.

Key specifications

Parameter Value
Manufacturer Tritech MOS
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS -30 V 1
Gate-Source Voltage VGS -12 12 V 1
Continuous Drain Current ID -4.6 A TA=25℃ 1
Continuous Drain Current ID -4 A TA=70℃ 1
Pulsed Drain Current IDM -20 A 1
Total Power Dissipation PD 1.4 W TA=25℃ 1
Total Power Dissipation PD 0.9 W TA=70℃ 1
Storage Temperature Range TSTG -55 150 ℃ 1
Operating Junction Temperature Range TJ -55 150 ℃ 1
Thermal Resistance Junction-Ambient RθJA 125 ℃/W Surface mounted on 1 inch2 FR-4 board, 2OZ copper (note 1) 1
Thermal Resistance Junction-Ambient (t ≤10s) RθJA 85 ℃/W t ≤10s, note 1 1
Drain-Source Breakdown Voltage BVDSS -30 -32 V VGS=0V, ID=-250uA 2
Static Drain-Source On-Resistance RDS(ON) 40 48 mΩ VGS=-10V, ID=-3A 2
Static Drain-Source On-Resistance RDS(ON) 49 65 mΩ VGS=-4.5V, ID=-3A 2
Static Drain-Source On-Resistance RDS(ON) 75 85 mΩ VGS=-2.5V, ID=-2A 2
Gate Threshold Voltage VGS(th) -0.5 -1.1 V VGS=VDS, ID=-250uA 2
Drain-Source Leakage Current IDSS -1 uA VDS=-24V, VGS=0V, TJ=25℃ 2
Drain-Source Leakage Current IDSS -5 uA VDS=-24V, VGS=0V, TJ=55℃ 2
Gate-Source Leakage Current IGSS -100 100 nA VGS=±12V, VDS=0V 2
Continuous Source Current IS -4.6 A VG=VD=0V, Force Current 2
Diode Forward Voltage VSD -1.2 V VGS=0V, IS=-1A, TJ=25℃ 2
BVDSS Temperature Coefficient △BVDSS/△TJ -0.014 V/℃ Reference to 25℃, ID=-1mA 2
VGS(th) Temperature Coefficient △VGS(th) 2.6 mV/℃ 2
Forward Transconductance gfs 5.6 S VDS=-5V, ID=-3A 2
Total Gate Charge (-4.5V) Qg 11.9 nC VDS=-15V, VGS=-4.5V, ID=-3A 2
Gate-Source Charge Qgs 1.8 nC VDS=-15V, VGS=-4.5V, ID=-3A 2
Gate-Drain Charge Qgd 3 nC VDS=-15V, VGS=-4.5V, ID=-3A 2
Turn-On Delay Time Td(on) 6.6 ns VDD=-15V, VGS=-4.5V, RG=3.3Ω, ID=-3A 2
Rise Time Tr 27.8 ns VDD=-15V, VGS=-4.5V, RG=3.3Ω, ID=-3A 2
Turn-Off Delay Time Td(off) 46.2 ns VDD=-15V, VGS=-4.5V, RG=3.3Ω, ID=-3A 2
Fall Time Tf 20.6 ns VDD=-15V, VGS=-4.5V, RG=3.3Ω, ID=-3A 2
Input Capacitance Ciss 290 pF VDS=-15V, VGS=0V, f=1MHz 2
Output Capacitance Coss 73 pF VDS=-15V, VGS=0V, f=1MHz 2
Reverse Transfer Capacitance Crss 71 pF VDS=-15V, VGS=0V, f=1MHz 2

CAD (KiCad official)

  • Symbol: TM3401AI
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: tm3401ai-etched.step / tm3401ai-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); tm3401ai.step / tm3401ai.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Tritech MOS datasheet (5 pp, sha256 e48a2d4f87d9fecf, retrieved 2026-10-17, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF